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Download Dataram 2GB DDR3 DIMM
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DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM Identification DTM64332B 256Mx72 2GB 2Rx8 PC3L-10600R-9-11-B1 Performance range Clock / Module Speed / CL-tRCD -tRP 667 MHz / PC3L-10600 / 9-9-9 533 MHz / PC3L-8500 / 8-8-8 533 MHz / PC3L-8500 / 7-7-7 400 MHz / PC3L-6400 / 6-6-6 Features Description 240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high DTM64332B is a registered 256Mx72 memory module, which conforms to JEDEC's DDR3L, PC3L-10600 standard. The assembly is DualRank. Each Rank is comprised of nine 128Mx8 DDR3 Samsung SDRAMs. One 2K-bit EEPROM is used for Serial Presence Detect and a combination register/PLL, with Address and Command Parity, is also used. Both output driver strength and input termination impedance are programmable to maintain signal integrity on the I/O signals in a Fly-by topology. A thermal sensor accurately monitors the DIMM module and can prevent exceeding the maximum operating temperature of 95C. Operating Voltage: VDD = VDDQ = +1.35V (1.283V to 1.45V) Backward-compatible to VDD = VDDQ = +1.5V ±0.075V On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM Data Transfer Rate: 10.6 Gigabytes/sec Data Bursts: 8 and burst chop 4 mode ZQ Calibration for Output Driver and On-Die Termination (ODT) Programmable ODT / Dynamic ODT during Writes Programmable CAS Latency: 6, 7, 8, and 9 Bi-Directional Differential Data Strobe signals SDRAM Addressing (Row/Col/Bank): 14/10/3 Fully RoHS Compliant Pin Configuration Front Side Pin Description Back Side Name Function 1 VREFDQ 31 DQ25 61 A2 91 DQ41 121 VSS 151 VSS 181 A1 211 VSS CB[7:0] Data Check Bits 2 VSS 32 VSS 62 VDD 92 VSS 122 DQ4 152 DM3 182 VDD 212 DM5 DQ[63:0] Data Bits 3 4 5 6 33 /DQS3 34 DQS3 35 VSS 36 DQ26 63 64 65 66 CK1* /CK1* VDD VDD 93 94 95 96 /DQS5 DQS5 VSS DQ42 123 DQ5 124 VSS 125 DM0 126 /TDQS9 153 154 155 156 183 184 185 186 213 214 215 216 DQS[8:0], /DQS[8:0] DM[8:0] /TDQS[17:9] CK[1:0], /CK[1:0] Differential Data Strobes Data Mask Termination Data Strobes Differential Clock Inputs 7 DQS0 37 DQ27 67 VREFCA 97 DQ43 127 VSS 157 VSS 187 /Event 217 VSS CKE[1:0] Clock Enables 8 VSS 9 DQ2 38 VSS 39 CB0 68 69 PAR_IN VDD 98 99 VSS DQ48 128 DQ6 129 DQ7 158 CB4 159 CB5 188 A0 189 VDD 218 DQ52 219 DQ53 /CAS /RAS Column Address Strobe Row Address Strobe 10 DQ3 11 VSS 12 DQ8 40 CB1 41 VSS 42 /DQS8 70 71 72 A10/AP BA0 VDD 100 DQ49 101 VSS 102 /DQS6 130 VSS 131 DQ12 132 DQ13 160 VSS 190 BA1 161 DM8 191 VDD 162 /TTDQS17 192 /RAS 220 VSS 221 DM6 222 /TDQS15 /S[3:0] /WE A[15:0] Chip Selects Write Enable Address Inputs 13 DQ9 43 DQS8 73 /WE 103 DQS6 133 VSS 163 VSS 223 VSS BA[2:0] Bank Addresses 14 VSS 15 /DQS1 16 DQS1 17 VSS 44 VSS 45 CB2 46 CB3 47 VSS 74 75 76 77 /CAS VDD /S1 ODT1 104 105 106 107 134 DM1 164 135 /TDQS10 165 136 VSS 166 137 DQ14 167 224 225 226 227 ODT[1:0] SA[2:0] SCL SDA On Die Termination Inputs SPD Address SPD Clock Input SPD Data Input/Output 78 79 80 VDD 108 DQ56 /S2, NC* 109 DQ57 VSS 110 VSS DQ0 DQ1 VSS /DQS0 18 DQ10 48 VTT 19 DQ11 49 VTT 20 VSS 50 CKE0 VSS DQ50 DQ51 VSS VDD ODT0 A13 VDD DQ54 DQ55 VSS DQ60 198 /S3, NC* 199 VSS 200 DQ36 228 DQ61 229 VSS 230 DM7 VSS VDD VDDSPD Ground Power SPD EEPROM Power 171 A15 201 DQ37 231 /TDQS16 VREFDQ Reference Voltage for DQ 202 203 204 205 206 207 232 233 234 235 236 237 VREFCA VTT /Event NC Reference Voltage for CA Termination Voltage Temperature Sensing No Connection 81 DQ32 111 /DQS7 141 DQ21 82 83 84 85 86 87 DQ33 VSS /DQS4 DQS4 VSS DQ34 112 113 114 115 116 117 142 VSS 172 143 DM2 173 144 /TDQS11 174 145 VSS 175 146 DQ22 176 147 DQ23 177 88 89 90 DQ35 VSS DQ40 118 SCL 119 SA2 120 VTT 28 DQ19 58 A5 29 VSS 59 A4 30 DQ24 60 VDD 193 /S0 CB6 194 CB7 195 VSS 196 NC (TEST) 197 /TDQS14 VSS DQ46 DQ47 168 /RESET 169 CKE1 170 VDD 22 DQ17 23 VSS 24 /DQS2 25 DQS2 26 VSS 27 DQ18 DQS7 VSS DQ58 DQ59 VSS SA0 VDD CK0 /CK0 VDD 138 DQ15 139 VSS 140 DQ20 21 DQ16 51 VDD 52 BA2 53 /ERR_OUT 54 VDD 55 A11 56 A7 57 VDD /TDQS12 VSS DQ30 DQ31 148 VSS 149 DQ28 150 DQ29 A14 VDD A12/ /BC A9 VDD A8 178 A6 179 VDD 180 A3 VSS DM4 /TQDS13 VSS DQ38 DQ39 208 VSS 209 DQ44 210 DQ45 VSS DQ62 DQ63 VSS VDDSPD SA1 238 SDA 239 VSS 240 VTT * Not used Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 1 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM Front view 133.35 [5.250] 9.50 [0.374] 30.00 [1.181] 17.30 [0.681] 5.00 [0.197] 5.175 [0.204] 47.00 [1.850] 71.00 [2.795] 2.50 [0.098] 123.00 [4.843] Back view Side view 4.00Max [0.157] Max 4.00 Min [0.157] Min 1.27 ±.10 [0.0500 ±0.0040] Notes Tolerances on all dimensions except where otherwise indicated are ±.13 (.005). All dimensions are expressed: millimeters [inches] Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 2 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM /RS1 /RS0 DQSR0 /DQSR0 DMR0 /TDQSR9 I/O[7:0] I/O[7:0] RANK 1 DQR[39:32] DQR[47:40] I/O[7:0] /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS I/O[7:0] RANK 1 /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS I/O[7:0] I/O[7:0] I/O[7:0] DQR[55:48] I/O[7:0] I/O[7:0] /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS DQSR6 /DQSR6 DMR6 /TDQSR15 NU /TDQS DQSR2 /DQSR2 DMR2 /TDQSR11 I/O[7:0] DQR[63:56] I/O[7:0] I/O[7:0] /DQS DQS DM TDQS /CS /DQS DQS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS I/O[7:0] NU /TDQS DQSR7 /DQSR7 DMR7 /TDQSR16 DQSR3 /DQSR3 DMR3 /TDQSR12 DQR[31:24] RANK 0 DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS I/O[7:0] DQR[23:16] I/O[7:0] DQSR5 /DQSR5 DMR5 /TDQSR14 DQSR1 /DQSR1 DMR1 /TDQSR10 DQR[15:8] DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS RANK 0 DM TDQS /CS DQR[7:0] DM TDQS /CS NU /TDQS DQSR4 /DQSR4 DMR4 /TDQSR13 I/O[7:0] CBR[7:0] I/O[7:0] /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS DQSR8 /DQSR8 DMR8 /TDQSR17 I/O[7:0] V DD TO SDRAMS All 15 OHMS DQR[63:0] DQ[63:0] CB[7:0] CBR[7:0] /RS0 /RS1 /S0 /S1 BA[2:0] BA[2:0]R A[14:0]R A[15:0] DQSR[8:0] /RAS /RASR /DQS[8:0] /DQSR[8:0] /CAS /WE /CASR /WER DMR[8:0] CKE0 DM[8:0] /TDQSR[17:9] REG / PLL DQS[8:0] /TDQS[17:9] CKE1 ODT0 ODT1 All 39 OHMS BA[2:0]R CK0 120 OHMS /CK0 LCLK[1:0] RCLK[1:0] /RCLK[1:0] CKE0R CKE1R ODT0R DECOUPLING V DDSPD V DD V REF_DQ V SS VREF_CA V TT ODT1R L,R(CLK)[1:0] /L,R(CLK)[1:0] Serial PD All Devices All SDRAMs All Devices All SDRAMs All SDRAMs /RESET A[15:0]R /RASR SDRAMS /CASR /WER CK1 VTT 120 OHMS All 240 OHMS All 39 OHMS CKE[1:0]R ODT[1:0]R /RS[1:0] All 39 OHMS 100 nF /LCLK[1:0] /ERR_OUT PAR_IN GLOBAL SDRAM CONNECTS VDD All 39 OHMS 100 nF All 22 OHMS SCL ZQ VTT /EVENT /CK1 VSS Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 TEMPERATURE MONITOR/ SERIAL PD SA0 SA1 SDA SA2 Page 3 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM Absolute Maximum Ratings (Note: Operation at or above Absolute Maximum Ratings can adversely affect module reliability.) PARAMETER Symbol Minimum Maximum Unit Temperature, non-Operating TSTORAGE -55 100 C TA 0 70 C Ambient Temperature, Operating DRAM Case Temperature, Operating TCASE 0 95 C VDD -0.4 1.975 V VIN,VOUT -0.4 1.975 V Voltage on VDD relative to VSS Voltage on Any Pin relative to VSS Notes: DRAM Operating Case Temperature above 85C requires 2X refresh. Recommended DC Operating Conditions (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Power Supply Voltage Symbol Operation Voltage Minimum Typical Maximum 1.35V 1.283 1.35 1.4500 1.5V 1.425 1.5 1.575 0.49 VDD 0.50 VDD 0.51 VDD V 1 0.49 VDD 0.50 VDD 0.51 VDD V 1 VDD I/O Reference Voltage VREFDQ 1.35V Unit Note V 1.5V I/O Reference Voltage VREFCA 1.35V 1.5V Notes: 1) For Reference VDD/2 ± 15 mV. The value of VREF is expected to equal one-half VDD and to track variations in the VDD DC level. Peak-to-peak noise on VREF may not exceed ±1% of its DC value. For Reference: VREF = VDD/2 ± 15 mV. DC Input Logic Levels, Single-Ended (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Symbol Operation Voltage Minimum Maximum Unit Logical High (Logic 1) VIH(DC) 1.35V VREF + 0.09 VDD V 1.5V VREF + 0.1 VDD Logical Low (Logic 0) VIL(DC) 1.35V VSS VREF - 0.09 1.5V VSS VREF - 0.1 V AC Input Logic Levels, Single-Ended (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Logical High (Logic 1) Logical Low (Logic 0) Symbol Operation Voltage Minimum Maximum Unit VIH(AC) 1.35V VREF + 0.160 - V 1.5V VREF + 0.175 - 1.35V - VREF - 0.160 1.5V - VREF - 0.175 VIL(AC) Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 V Page 4 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM Differential Input Logic Levels (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Differential Input Logic High Differential Input Logic Low Differential Input Cross Point Voltage relative to VDD/2 Symbol VIH.DIFF Minimum +0.200 Maximum DC:VDD AC:VDD+0.4 Unit V VIL.DIFF DC:VSS AC:VSS-0.4 -0.200 V VIX - 0.150 + 0.150 V Capacitance (TA = 25 C, f = 100 MHz) PARAMETER Pin Symbol Minimum Maximum Unit CCK 1.5 2.5 pF Input Capacitance, Clock CK0, /CK0 Input Capacitance, Address BA[2:0], A[15:0], /RAS, /CAS, /WE CI 1.5 2.5 pF Input Capacitance Control /S[1:0], CKE[1:0], ODT[1:0] CI 1.5 2.5 pF Input/Output Capacitance DQ[63:0], CB[7:0] DQS[8:0], /DQS[8:0], DM[8:0], TDQS[17:9] CIO 2.8 5 pF DC Characteristics (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Input Leakage Current Symbol Minimum Maximum Unit Note IIL -18 +18 µA 1,2 IOL -10 +10 µA 2,3 (Any input 0 V < VIN < VDD) Output Leakage Current (0V < VOUT < VDDQ) Notes: 1) All other pins not under test = 0 V 2) Values are shown per pin 3) DQ, DQS, DQS and ODT are disabled Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 5 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM IDD Specifications and Conditions (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Operating One Bank ActivePrecharge Current Operating One Bank Active-ReadPrecharge Current Precharge PowerDown Current Precharge PowerDown Current Precharge Quiet Standby Current Precharge Standby Current Active Power-Down Current Active Standby Current Operating Burst Write Current Operating Burst Read Current Burst Refresh Current Self Refresh Current Operating Bank Interleave Read Current Symbol IDD0* IDD1* IDD2P IDD2P IDD2Q IDD2N IDD3P IDD3N IDD4W* IDD4R* IDD5* IDD6 IDD7* Test Condition Operating current : One bank ACTIVATE-to-PRECHARGE Operating current : One bank ACTIVATE-to-READ-toPRECHARGE Precharge power down current: (Slow exit) Precharge power down current: (Fast exit) Precharge quiet standby current Precharge standby current Active power-down current Active standby current Burst write operating current Burst read operating current Refresh current Self-refresh temperature current: MAX TC = 85°C All bank interleaved read current Max Value Unit 1.35V 1.5V 998 1120 mA 1090 1183 mA 720 760 mA 756 796 mA 806 900 mA 816 920 mA 756 850 mA 906 1000 mA 1323 1445 mA 1313 1435 mA 1473 1585 mA 210 210 mA 1853 1975 mA * One module rank in this operation the rest in IDD2P slow exit. Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 6 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM AC Operating Conditions PARAMETER Symbol Min Max Unit Internal read command to first data tAA 13.125 20 ns CAS-to-CAS Command Delay tCCD 4 - tCK tCH(avg) 0.47 0.53 tCK tCK 1.5 1.875 ns tCL(avg) 0.47 0.53 tCK tDH 65 - ps Clock High Level Width Clock Cycle Time Clock Low Level Width Data Input Hold Time after DQS Strobe DQ Input Pulse Width tDIPW 400 - ps DQS Output Access Time from Clock tDQSCK -255 +255 ps Write DQS High Level Width tDQSH 0.45 0.55 tCK(avg) Write DQS Low Level Width tDQSL 0.45 0.55 tCK(avg) DQS-Out Edge to Data-Out Edge Skew tDQSQ - 125 ps Data Input Setup Time Before DQS Strobe tDS 30 - ps DQS Falling Edge from Clock, Hold Time tDSH 0.2 - tCK(avg) DQS Falling Edge to Clock, Setup Time tDSS 0.2 - tCK(avg) Clock Half Period tHP minimum of tCH or tCL - ns Address and Command Hold Time after Clock tIH 140 - ps Address and Command Setup Time before Clock tIS 65 - ps Load Mode Command Cycle Time tMRD 4 - tCK DQ-to-DQS Hold tQH 0.38 - tCK(avg) Active-to-Precharge Time tRAS 36 9*tREFI ns Active-to-Active / Auto Refresh Time tRC 49.125 - ns RAS-to-CAS Delay tRCD 13.125 - ns - 7.8 µs o o tREFI o o Average Periodic Refresh Interval 0 C < TCASE < 95 C tREFI - 3.9 µs Auto Refresh Row Cycle Time tRFC 110 - ns Row Precharge Time tRP 13.125 - ns Read DQS Preamble Time tRPRE 0.9 Note-1 tCK(avg) Read DQS Postamble Time tRPST 0.3 Note-2 tCK(avg) Row Active to Row Active Delay tRRD Max(4nCK, 6ns) - ns Internal Read to Precharge Command Delay tRTP Max(4nCK, 7.5ns) - ns Write DQS Preamble Setup Time tWPRE 0.9 - tCK(avg) Write DQS Postamble Time tWPST 0.3 - tCK(avg) Write Recovery Time tWR 15 - ns Internal Write to Read Command Delay tWTR Max(4nCK, 7.5ns) - ns Average Periodic Refresh Interval 0 C < TCASE < 85 C Notes: 1. 2. The maximum preamble is bound by tLZDQS(min) The maximum postamble is bound by tHZDQS(max) Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 7 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM SERIAL PRESENCE DETECT MATRIX Byte# Function. Value Hex 176 256 Bytes 0-116 0x92 SPD Revision. Rev. 1.1 0x11 Key Byte / DRAM Device Type. DDR3 SDRAM 0x0B Number of Bytes Used / Number of Bytes in SPD Device / CRC Coverage. Bit 3 ~ Bit 0. SPD Bytes Used Bit 6 ~ Bit 4. SPD Bytes Total Bit 7. CRC Coverage - 0 1 2 Key Byte / Module Type. 3 4 Bit 3 ~ Bit 0. Module Type Bit 7 ~ Bit 4. Reserved - RDIMM 0 0x01 SDRAM Density and Banks. Bit 3 ~ Bit 0. Total SDRAM capacity, in megabits Bit 6 ~ Bit 4. Bank Address Bits Bit 7. Reserved - 1Gb 8 banks 0 0x02 10 14 0 0x11 SDRAM Addressing. Bit 2 ~ Bit 0. Column Address Bits Bit 5 ~ Bit 3. Row Address Bits Bit 7, 6. Reserved 5 Module Nominal Voltage, VDD. Bit 0. NOT 1.5 V operable Bit 1. 1.35 V operable Bit 2. 1.2X V operable Bit 3. Reserved Bit 4. Reserved Bit 5. Reserved Bit 6. Reserved Bit 7. Reserved - 6 X 0x02 Module Organization. 7 Bit 2 ~ Bit 0. SDRAM Device Width Bit 5 ~ Bit 3. Number of Ranks Bit 7, 6. Reserved 8-Bits 2-Rank 0 0x09 Bit 2 ~ Bit 0. Primary bus width, in bits Bit 4, Bit 3. Bus width extension, in bits Bit 7 ~ Bit 5. Reserved - 64-Bits 8-Bits 0 0x0B 1 1 1 (MTB = 0.125ns) 0x11 Module Memory Bus Width. 8 9 10 Fine Timebase (FTB) Dividend / Divisor. Bit 3 ~ Bit 0. Fine Timebase (FTB) Divisor Bit 7 ~ Bit 4. Fine Timebase (FTB) Dividend Medium Timebase (MTB) Dividend. Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 0x01 Page 8 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM 11 Medium Timebase (MTB) Divisor. 12 SDRAM Minimum Cycle Time (tCKmin). 13 Reserved. 8 (MTB = 0.125ns) 0x08 1.5ns 0x0C UNUSED 0x00 CAS Latencies Supported, Least Significant Byte. Bit 0. CL = 4 Bit 1. CL = 5 Bit 2. CL = 6 Bit 3. CL = 7 Bit 4. CL = 8 Bit 5. CL = 9 Bit 6. CL = 10 Bit 7. CL = 11 - 14 X X X X 0x3C CAS Latencies Supported, Most Significant Byte. Bit 0. CL = 12 Bit 1. CL = 13 Bit 2. CL =14 Bit 3. CL = 15 Bit 4. CL = 16 Bit 5. CL = 17 Bit 6. CL = 18 Bit 7. Reserved. 15 16 Minimum CAS Latency Time (tAAmin). 17 Minimum Write Recovery Time (tWRmin). 18 Minimum RAS# to CAS# Delay Time (tRCDmin). 19 Minimum Row Active to Row Active Delay Time (tRRDmin). 20 Minimum Row Precharge Delay Time (tRPmin). 0x00 13.125ns 0x69 15.0ns 0x78 13.125ns 0x69 6.0ns 0x30 13.125ns 0x69 1 1 0x11 36.0ns 0x20 49.125ns 0x89 Upper Nibbles for tRAS and tRC. 21 22 23 24 25 Bit 3 ~ Bit 0. tRAS Most Significant Nibble Bit 7 ~ Bit 4. tRC Most Significant Nibble Minimum Active to Precharge Delay Time (tRASmin), Least Significant Byte. Minimum Active to Active/Refresh Delay Time (tRCmin), Least Significant Byte. Minimum Refresh Recovery Delay Time (tRFCmin), Least Significant Byte. Minimum Refresh Recovery Delay Time (tRFCmin), Most Significant Byte. 110.0ns 0x70 110.0ns 0x03 26 Minimum Internal Write to Read Command Delay Time (tWTRmin). 7.5ns 0x3C 27 Minimum Internal Read to Precharge Command Delay Time (tRTPmin). 7.5ns 0x3C Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 9 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM Upper Nibble for tFAW. 28 29 Bit 3 ~ Bit 0. tFAW Most Significant Nibble Bit 7 ~ Bit 4. Reserved Minimum Four Activate Window Delay Time (tFAWmin), Least Significant Byte. 0 0 0x00 30.0ns 0xF0 Bit 0. RZQ / 6 Bit 1. RZQ / 7 Bit 6 ~ Bit 2. Reserved Bit 7. DLL-Off Mode Support X X 0x83 Extended Temperature Range Extended Temperature Refresh Rate Auto Self Refresh (ASR) On-die Thermal Sensor (ODTS) Readout Reserved Reserved Reserved Partial Array Self Refresh (PASR) - X SDRAM Optional Features. 30 SDRAM Drivers Supported. 31 32 0x01 Module Thermal Sensor. Bit 6 ~ Bit 0. Thermal Sensor Accuracy Bit 7. Thermal Sensor - 0 With TS Bit 6 ~ Bit 0. Non-Standard Device Description Bit 7. SDRAM Device Type - 0 Std Mono 0x80 SDRAM Device Type. 33 34-59 Reserved UNUSED 0x00 0x00 Module Nominal Height. 60 Bit 4 ~ Bit 0. Module Nominal Height max, in mm Bit 7 ~ Bit5. Reserved - 29<h<=30 0 0x0F 1<th<=2 1<th<=2 0x11 R/C B Rev.1 0 0x21 1 Register 1 Row 0 0x05 Module Maximum Thickness. 61 Bit 3 ~ Bit 0. Front, in mm (baseline thickness = 1 mm) Bit 7 ~ Bit 4. Back, in mm (baseline thickness = 1 mm) Reference Raw Card Used. 62 Bit 4 ~ Bit 0. Reference Raw Card Bit 6, Bit 5. Reference Raw Card Revision Bit 7. Reserved (Registered) DIMM Module Attributes. 63 Bit 1 ~ Bit 0. # of Registers used on RDIMM Bit 3 ~ Bit 2. # of Rows of DRAMs on RDIMM Bit 7 ~ Bit 4. Reserved - Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 10 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM RDIMM Thermal Heat Spreader Solution. Bit 6 ~ Bit 0. Heat Spreader Thermal Characteristics - 64 Bit 7. Heat Spreader Solution - 0 0x00 No HS 65 Register Manufacturer ID Code, Least Significant Byte (Optional). 0x04 66 Register Manufacturer ID Code, Most Significant Byte (Optional). 0xB3 67 Register Revision Number (Optional). 0x21 Register Type. 68 69 70 71 Bit[2-0] Support Device Bit[7-3] Reserved [SSTE32882]: RC1 (MS Nibble) / RC0 (LS Nibble) [SSTE32882]: RC3 (MS Nibble) / RC2 (LS Nibble) - Drive Strength, Command/Address. Bit 1, Bit 0. RC2/DA3,4 Value.Bit 3, Bit 2. RC2/DBA0,1 Value Bit 5, Bit 4. RC3/DA4,3 value, Command/Address A Outputs Bit 7, Bit 6. RC3/DBA0,1 value, Command/Address B Outputs [SSTE32882]: RC5 (MS Nibble) / RC4 (LS Nibble) - Drive Strength, Control and Clock. Bit 1, Bit 0. RC4/DA3,4 Control Signals, A Outputs.Bit 3, Bit 2. RC4/DBA0,1 Control Signals, B Outputs Bit 5, Bit 4. RC5/DA4,3 value, Y1/Y1# and Y3/Y3# Clock Outputs Bit 7, Bit 6. RC5/DBA0,1 value, Y0/Y0# and Y2/Y2# Clock Outputs - SSTE32882 0 0x00 UNUSED 0x00 RESERVED RESERVED Moderate Moderate Light Light Light Light 0x50 0x00 72 [SSTE32882]: RC7 (MS Nibble) / RC6 (LS Nibble). UNUSED 0x00 73 [SSTE32882]: RC9 (MS Nibble) / RC8 (LS Nibble). UNUSED 0x00 74 [SSTE32882]: RC11 (MS Nibble) / RC10 (LS Nibble). UNUSED 0x00 75 [SSTE32882]: RC13 (MS Nibble) / RC12 (LS Nibble). UNUSED 0x00 76 [SSTE32882]: RC15 (MS Nibble) / RC14 (LS Nibble). UNUSED 0x00 Module-Specific Section UNUSED 0x00 Module-Specific Section. UNUSED 0x00 Module-Specific Section UNUSED 0x00 77112 113 114116 117 Module Manufacturer ID Code, Least Significant Byte 0x80 118 Module Manufacturer ID Code, Most Significant Byte 0xCE 119 120, 121 122125 126 Module Manufacturing Location 0x01 Module Manufacturing Date 0x20 Module Serial Number 0x20 Cyclical Redundancy Code (CRC). CRC 0x66 127 Cyclical Redundancy Code (CRC). CRC 0x11 Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 11 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM 128 Module Part Number M 0x4D 129 Module Part Number 3 0x33 130 Module Part Number 9 0x39 131 Module Part Number 3 0x33 132 Module Part Number B 0x42 133 Module Part Number 5 0x35 134 Module Part Number 6 0x36 135 Module Part Number 7 0x37 136 Module Part Number 3 0x33 137 Module Part Number G 0x47 138 Module Part Number B 0x42 139 Module Part Number 0 0x30 140 Module Part Number - 0x2D 141 Module Part Number Y 0x59 142 Module Part Number H 0x48 143 144, 145 146, 147 148 Module Part Number 9 0x39 DRAM Manufacturer ID Code, Least Significant Byte 0x80 149 150175 176255 DRAM Manufacturer ID Code, Most Significant Byte 0xCE Module Part Number Module Revision Code 0x20 UNUSED 0x00 Manufacturer’s Specific Data UNUSED 0x00 Open for customer use UNUSED 0x00 Note: Serial Presence Detect shown for reference only. Bytes # 119 - 125, 146,147,150 - 255 value may vary. Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 12 DTM64332B 2GB - 240-Pin 2Rx8 Registered ECC LV DDR3 DIMM DATARAM CORPORATION, USA Corporate Headquarters, P.O.Box 7528, Princeton, NJ 08543-7528; Voice: 609-799-0071, Fax: 609-799-6734; www.dataram.com All rights reserved. The information contained in this document has been carefully checked and is believed to be reliable. However, Dataram assumes no responsibility for inaccuracies. The information contained in this document does not convey any license under the copyrights, patent rights or trademarks claimed and owned by Dataram. No part of this publication may be copied or reproduced in any form or by any means, or transferred to any third party without prior written consent of Dataram. Document 06494, Revision A, 04-Aug-11, Dataram Corporation 2011 Page 13
