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SEMICONDUCTOR TECHNICAL DATA
!# !
" !
. . . designed for use as high–frequency drivers in audio amplifiers.
• DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029
VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031
• High Current Gain — Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
• TO–220AB Compact Package
*Motorola Preferred Device
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8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
120 – 150 VOLTS
50 WATTS
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
VCEO
VCB
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
MJE15028
MJE15029
MJE15030
MJE15031
Unit
120
150
Vdc
150
Vdc
120
VEB
IC
5.0
Vdc
8.0
16
Adc
IB
PD
2.0
Adc
50
0.40
Watts
W/_C
PD
2.0
0.016
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
2.5
_C/W
Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
PD, POWER DISSIPATION (WATTS)
TA TC
3.0
60
2.0
40
TC
1.0
20
0
0
TA
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
120
150
—
—
—
—
0.1
0.1
—
—
10
10
—
10
40
40
40
20
—
—
—
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
Vdc
MJE15028, MJE15029
MJE15030, MJE15031
Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
(VCE = 150 Vdc, IB = 0)
MJE15028, MJE15029
MJE15030, MJE15031
ICEO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 150 Vdc, IE = 0)
MJE15028, MJE15029
MJE15030, MJE15031
mAdc
µAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
µAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
DC Current Gain Linearity
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
(NPN TO PNP)
hFE
—
Typ
2
3
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.0
Vdc
fT
30
—
MHz
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
(1) Pulse Test: Pulse Width
(2) fT = hfe• ftest.
1.0
0.7
0.5
2.0%.
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
300 µs, Duty Cycle
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
P(pk)
ZθJC(t) = r(t) RθJC
RθJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
Figure 2. Thermal Response
2
Motorola Bipolar Power Transistor Device Data
1.0 k
IC, COLLECTOR CURRENT (AMP)
20
16
10
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation then the curves indicate.
The data of Figures 3 and 4 is based on T J(pk) = 150 _C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T J(pk)
< 150_C. T J(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
100 µs
5 ms
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
0.1
0.02
2.0
MJE15028
MJE15029
MJE15030
MJE15031
5.0
10
50
20
120 150
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
1000
Cib (NPN)
Cib (PNP)
500
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (AMP)
8.0
5.0
IC/IB = 10
TC = 25°C
3.0
VBE(off) = 9 V
5V
3V
2.0
1.0
0
0
200
100
Cob (PNP)
50
30
Cob (NPN)
20
1.5 V
0V
100 110 120 130 140 150
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.5
3.0
50
30
PNP
NPN
10
5.0
0.5
0.7
1.0
2.0
3.0
f, FREQUENCY (MHz)
5.0
7.0
Figure 6. Small–Signal Current Gain
Motorola Bipolar Power Transistor Device Data
10
fT, CURRENT GAIN–BANDWIDTH PRODUCT (MHz)
hfe , SMALL SIGNAL CURRENT GAIN
100
20
100 150
Figure 5. Capacitances
Figure 4. Reverse–Bias Switching
Safe Operating Area
VCE = 10 V
IC = 0.5 A
TC = 25°C
5.0 7.0 10
30
50
VR, REVERSE VOLTAGE (VOLTS)
100
90
(PNP)
(NPN)
60
50
20
10
0
0.1
0.2
1.0
0.5
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
10
Figure 7. Current Gain–Bandwidth Product
3
NPN — MJE15028 MJE15030
PNP — MJE15029 MJE15031
1K
1K
100
70
50
500
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
500
200
150
VCE = 2 V
VCE = 2.0 V
TJ = 150°C
TJ = 25°C
TJ = – 55°C
30
20
10
0.1
TJ = 150°C
200
TJ = 25°C
100
TJ = – 55°C
50
20
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
10
0.1
10
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
10
IC/IB = 10
5.0
10
Figure 8. DC Current Gain
NPN
PNP
TJ = 25°C
1.8
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
1.0
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 2.0 V
1.4
1.0
VBE(sat) @ IC/IB = 10
0.8
VBE(on) @ VCE = 2.0 V
0.4
VCE(sat) = IC/IB = 20
0.2
0.1
0.2
IC/IB = 10
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
VCE(sat) = IC/IB = 20
0
0.1
10
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltage
10
1.0
VCC = 80 V
IC/IB = 10
TJ = 25°C
3.0
td (NPN, PNP)
tr (PNP)
0.2
t, TIME ( µs)
t, TIME ( µs)
0.5
0.1
0.05
0.2
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. Turn–On Times
4
ts (PNP)
1.0
tf (PNP)
tr (NPN)
0.02
0.01
0.1
2.0
0.5
0.03
VCC = 80 V
IC/IB = 10, IB1 = IB2
ts (NPN) TJ = 25°C
5.0
5.0
10
0.1
0.1
tf (NPN)
0.2
0.3
0.5
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
Figure 11. Turn–Off Times
Motorola Bipolar Power Transistor Device Data
10
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
5
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJE15028/D*
MJE15028/D
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