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DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
Identification
DTM64311E 128Mx72
1GB 1Rx8 PC3-10600R-9-10-A0
Performance range
Clock / Module Speed / CL-tRCD -tRP
667 MHz / PC3-10600 / 9-9-9
533 MHz / PC3-8500 / 8-8-8
400 MHz / PC3-6400 / 6-6-6
Description
Features
240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high
Operating Voltage: 1.5V ± 0.075
I/O Type: SSTL_15
On-board I2C temperature sensor with integrated serial presencedetect (SPD) EEPROM.
Data Transfer Rate: 10.6 Gigabytes/sec
Data Bursts: 8 and burst chop 4 mode
ZQ Calibration for Output Driver and On-Die Termination (ODT)
Programmable ODT / Dynamic ODT during Writes
Programmable CAS Latency: 6, 8, 9 and 10
Bi-Directional Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 14/10/3
DTM64311E is a registered 128Mx72 memory
module, which conforms to JEDEC's DDR3,
PC3-10600 standard. The assembly is SingleRank. The Rank is comprised of nine 128Mx8
DDR3 Samsung SDRAMs.
One 2K-bit EEPROM is used for Serial
Presence
Detect
and
a
combination
register/PLL, with Address and Command
Parity, is also used.
Both output driver strength and input
termination impedance are programmable to
maintain signal integrity on the I/O signals in a
Fly-by topology.
A thermal sensor accurately monitors the
DIMM module and can prevent exceeding the
maximum operating temperature of 95C.
Fully RoHS Compliant
Pin Configuration
Front Side
Pin Description
Back Side
Name
Function
Data Check Bits
1 VREFDQ 31 DQ25
61 A2
91 DQ41 121 VSS
151 VSS
181 A1
211 VSS
CB[7:0]
2 VSS
32 VSS
62 VDD
92 VSS
152 DM3
182 VDD
212 DM5
DQ[63:0]
Data Bits
3
4
5
6
33 /DQS3
34 DQS3
35 VSS
36 DQ26
63 CK1**
64 /CK1**
65 VDD
66 VDD
93
94
95
96
153
154
155
156
183
184
185
186
213
214
215
216
DQS[8:0], /DQS[8:0]
DM[8:0]
CK[1:0], /CK[1:0]
CKE[1:0]
Differential Data Strobes
Data Mask
Differential Clock Inputs
Clock Enables
7 DQS0 37 DQ27
8 VSS
38 VSS
9 DQ2
39 CB0
67 VREFCA
68 PAR_IN
69 VDD
97 DQ43 127 VSS
98 VSS
128 DQ6
99 DQ48 129 DQ7
10 DQ3
11 VSS
12 DQ8
40 CB1
41 VSS
42 /DQS8
70 A10/AP
71 BA0
72 VDD
100 DQ49 130 VSS
160 VSS
101 VSS
131 DQ12 161 DM8
102 /DQS6 132 DQ13 162 NC
13 DQ9
43 DQS8
73 /WE
103 DQS6 133 VSS
163 VSS
193 /S0
223 VSS
ODT[1:0]
On Die Termination Inputs
74 /CAS
75 VDD
76 /S1**
104 VSS
134 DM1
105 DQ50 135 NC
106 DQ51 136 VSS
164 CB6
165 CB7
166 VSS
194 VDD
195 ODT0
196 A13
224 DQ54
225 DQ55
226 VSS
SA[2:0]
SCL
SDA
SPD Address
SPD Clock Input
SPD Data Input/Output
Ground
DQ0
DQ1
VSS
/DQS0
14 VSS
44 VSS
15 /DQS1 45 CB2
16 DQS1 46 CB3
122 DQ4
/DQS5 123 DQ5
DQS5 124 VSS
VSS
125 DM0
DQ42 126 NC
NC
VSS
DQ30
DQ31
157 VSS
158 CB4
159 CB5
17 VSS
47 VSS
77 ODT1**
107 VSS
18 DQ10
48 VTT
78 VDD
108 DQ56 138 DQ15 168 /RESET
19 DQ11
49 VTT
79 /S2, NC**
VDD
CK0
/CK0
VDD
NC
VSS
DQ46
DQ47
187 /Event
188 A0
189 VDD
217 VSS
218 DQ52
219 DQ53
/CAS
/RAS
/S[3:0]
Column Address Strobe
Row Address Strobe
Chip Selects
190 BA1
191 VDD
192 /RAS
220 VSS
221 DM6
222 NC
/WE
A[15:0]
BA[2:0]
Write Enable
Address Inputs
Bank Addresses
137 DQ14 167 NC (TEST) 197 VDD
227 DQ60
VSS
198 /S3, NC**
228 DQ61
VDD
Power
109 DQ57 139 VSS
199 VSS
229 VSS
VDDSPD
SPD EEPROM Power
Reference Voltage for DQ
169 CKE1**
140 DQ20 170 VDD
20 VSS
50 CKE0
80 VSS
110 VSS
200 DQ36
230 DM7
VREFDQ
21 DQ16
51 VDD
81 DQ32
111 /DQS7 141 DQ21 171 A15
201 DQ37
231 NC
VREFCA
Reference Voltage for CA
22 DQ17
23 VSS
24 /DQS2
25 DQS2
26 VSS
27 DQ18
52 BA2
53 /ERR_OUT
54 VDD
55 A11
56 A7
57 VDD
82 DQ33
83 VSS
84 /DQS4
85 DQS4
86 VSS
87 DQ34
112 DQS7
113 VSS
114 DQ58
115 DQ59
116 VSS
117 SA0
142 VSS
143 DM2
144 NC
145 VSS
146 DQ22
147 DQ23
172
173
174
175
176
177
202
203
204
205
206
207
232
233
234
235
236
237
VTT
/Event
NC
Termination Voltage
Temperature Sensing
No Connection
28 DQ19
58 A5
88 DQ35
118 SCL
148 VSS
178 A6
29 VSS
30 DQ24
59 A4
60 VDD
89 VSS
90 DQ40
119 SA2
120 VTT
149 DQ28 179 VDD
150 DQ29 180 A3
A14
VDD
A12/ /BC
A9
VDD
A8
VSS
DM4
NC
VSS
DQ38
DQ39
VSS
DQ62
DQ63
VSS
VDDSPD
SA1
208 VSS
238 SDA
209 DQ44
210 DQ45
239 VSS
240 VTT
** Not used
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
Page 1
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
Front view
133.35
[5.250]
9.50
[0.374]
30.00
[1.181]
17.30
[0.681]
5.00
[0.197]
5.175
[0.204]
47.00
[1.850]
71.00
[2.795]
2.50
[0.098]
123.00
[4.843]
Back view
Side view
3.94 Max
[0.155] Max
4.00 Min
[0.157] Min
1.27 ±.10
[0.0500 ±0.0040]
Notes
Tolerances on all dimensions except where otherwise
indicated are ±.13 (.005).
All dimensions are expressed: millimeters [inches]
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
Page 2
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
/RS0
DQSR0
/DQSR0
DMR0
/TDQSR9
I/O[7:0]
DQR[39:32]
DQR[47:40]
I/O[7:0]
I/O[7:0]
DQR[55:48]
DM
TDQS
/CS
/DQS
DQS
NU
/TDQS
/DQS
DQS
DM
TDQS
/CS
NU
/TDQS
DQSR6
/DQSR6
DMR6
/TDQSR15
I/O[7:0]
DQSR7
/DQSR7
DMR7
/TDQSR16
NU
/TDQS
/DQS
DQS
DM
TDQS
/CS
NU
/TDQS
DQSR3
/DQSR3
DMR3
/TDQSR12
DQR[31:24]
RANK 0
DM
TDQS
/CS
/DQS
DQS
NU
/TDQS
/DQS
DQS
DM
TDQS
/CS
NU
/TDQS
I/O[7:0]
DQSR2
/DQSR2
DMR2
/TDQSR11
DQR[23:16]
I/O[7:0]
DQSR5
/DQSR5
DMR5
/TDQSR14
DQSR1
/DQSR1
DMR1
/TDQSR10
DQR[15:8]
DM
TDQS
/CS
/DQS
DQS
NU
/TDQS
/DQS
DQS
RANK 0
DQR[56:63]
I/O[7:0]
DM
TDQS
/CS
/DQS
DQS
DQR[7:0]
DM
TDQS
/CS
NU
/TDQS
DQSR4
/DQSR4
DMR4
/TDQSR13
I/O[7:0]
CBR[7:0]
/DQS
DQS
DM
TDQS
/CS
NU
/TDQS
DQSR8
/DQSR8
DMR8
/TDQSR17
I/O[7:0]
V DD
TO SDRAMS
DQR[63:0]
DQ[63:0]
CB[7:0]
CBR[7:0]
DQS[17:0]
DQSR[17:0]
/DQS[17:0]
/DQSR[17:0]
DM[8:0]
DMR[8:0]
/TDQS[17:9]
/TDQSR[17:9]
/S0
BA[2:0]
A[15:0]
/RAS
/CAS
/WE
CKE0
ODT0
All 39 OHMS
CK0
BA[2:0]R
A[15:0]R
/RASR
/CASR
/WER
CKE0R
ODT0R
120
OHMS
/CK0
BA[2:0]R
/RS0
/ERR_OUT
L,R(CLK)[1:0]
PAR_IN
GLOBAL SDRAM CONNECTS
All 39 OHMS 100 nF
All
22 OHMS
REG / PLL
All 15 OHMS
/L,R(CLK)[1:0]
All 39 OHMS 100 nF
LCLK0
RCLK0
/LCLK0
/RCLK0
DECOUPLING
V DDSPD
VDD
V REF_DQ
V SS
VREF_CA
V TT
Serial PD
All Devices
All SDRAMs
All Devices
All SDRAMs
All SDRAMs
/RESET
A[15:0]R
/RASR
SDRAMS
/CASR
/WER
VTT
/EVENT
All 240 OHMS
All 39 OHMS
CKE0R
ODT0R
RS0
VDD
SCL
ZQ
VTT
VSS
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
TEMPERATURE MONITOR/
SERIAL PD
SA0
SA1
SDA
SA2
Page 3
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
Absolute Maximum Ratings
(Note: Operation at or above Absolute Maximum Ratings can adversely affect module reliability.)
PARAMETER
Symbol
Minimum
Maximum
Unit
Temperature, non-Operating
TSTORAGE
-55
100
C
TA
0
70
C
Ambient Temperature, Operating
TCASE
0
95
C
VDD
-0.4
1.975
V
VIN,VOUT
-0.4
1.975
V
DRAM Case Temperature, Operating
Voltage on VDD relative to VSS
Voltage on Any Pin relative to VSS
Notes:
DRAM Operating Case Temperature above 85C requires 2X refresh.
Recommended DC Operating Conditions (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Power Supply Voltage
Symbol
VDD
Minimum
1.425
Typical
1.5
Maximum
1.575
Unit
V
Note
I/O Reference Voltage
VREFDQ
0.49 VDD
0.50 VDD
0.51 VDD
V
1
I/O Reference Voltage
VREFCA
0.49 VDD
0.50 VDD
0.51 VDD
V
1
Notes:
For Reference VDD/2 ± 15 mV. The value of VREF is expected to equal one-half VDD and to track variations in the VDD DC
level. Peak-to-peak noise on VREF may not exceed ±1% of its DC value. For Reference: VREF = VDD/2 ± 15 mV.
DC Input Logic Levels, Single-Ended (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Logical High (Logic 1)
Symbol
VIH(DC)
Minimum
VREF + 0.1
Maximum
VDD
Unit
V
Logical Low (Logic 0)
VIL(DC)
VSS
VREF - 0.1
V
AC Input Logic Levels, Single-Ended (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Logical High (Logic 1)
Symbol
VIH(AC)
Minimum
VREF + 0.175
Maximum
-
Unit
V
Logical Low (Logic 0)
VIL(AC)
-
VREF - 0.175
V
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
Page 4
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
Differential Input Logic Levels (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Differential Input Logic High
Differential Input Logic Low
Differential Input Cross Point Voltage
relative to VDD/2
Symbol
VIH.DIFF
Minimum
+0.200
Maximum
DC:VDD AC:VDD+0.4
Unit
V
VIL.DIFF
DC:VSS AC:VSS-0.4
-0.200
V
VIX
- 0.150
+ 0.150
V
Capacitance (TA = 25 C, f = 100 MHz)
PARAMETER
Pin
Symbol
Minimum
Maximum
Unit
CCK
1.5
2.5
pF
pF
Input Capacitance, Clock
CK0, /CK0
Input Capacitance, Address
BA[2:0], A[15:0], /RAS, /CAS, /WE
CI
1.5
2.5
Input Capacitance Control
/S0, CKE0, ODT0
CI
1.5
2.5
Input/Output Capacitance
DQ[63:0], CB[7:0] DQS[8:0], /DQS[8:0],
DM[8:0], /TDQS
CIO
1.5
2.5
pF
ZQ Capacitance
ZQ
CZQ
-
6
pF
DC Characteristics (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Input Leakage Current
Symbol
Minimum
Maximum
Unit
Note
IIL
-18
+18
μA
1,2
IOL
-10
+10
μA
2,3
(Any input 0 V < VIN < VDD)
Output Leakage Current
(0V < VOUT < VDDQ)
Notes:
1) All other pins not under test = 0 V
2) Values are shown per pin
3) DQ, DQS, /DQS and ODT are disabled
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
Page 5
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
IDD Specifications and Conditions (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Operating One
Bank ActivePrecharge Current
Operating One
Bank Active-ReadPrecharge Current
Precharge PowerDown Current
Precharge PowerDown Current
Precharge Quiet
Standby Current
Precharge Standby
Current
Active Power-Down
Current
Active Standby
Current
Operating Burst
Write Current
Operating Burst
Read Current
Burst Refresh
Current
Self Refresh
Current
Operating Bank
Interleave Read
Current
Symbol
IDD0
IDD1
IDD2P
IDD2P
IDD2Q
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5
IDD6
IDD7
Test Condition
Operating current : One bank ACTIVATE-to-PRECHARGE
Operating current : One bank ACTIVATE-to-READ-toPRECHARGE
Precharge power down current: (Slow exit)
Precharge power down current: (Fast exit)
Precharge quiet standby current
Precharge standby current
Active power-down current
Active standby current
Burst write operating current
Burst read operating current
Refresh current
Self-refresh temperature current: MAX TC = 85°C
All bank interleaved read current
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
Max
Value
Unit
1425
mA
1560
mA
930
mA
1065
mA
1155
mA
1155
mA
1065
mA
1290
mA
2055
mA
1965
mA
2280
mA
930
mA
2910
mA
Page 6
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
AC Operating Conditions
PARAMETER
Symbol
Min
Max
Unit
Internal read command to first data
tAA
13.5
20
ns
CAS-to-CAS Command Delay
tCCD
4
-
tCK
tCH(avg)
0.47
0.53
tCK
tCK
1.5
1.875
ns
tCL(avg)
0.47
0.53
tCK
tDH
65
-
ps
Clock High Level Width
Clock Cycle Time
Clock Low Level Width
Data Input Hold Time after DQS Strobe
tDIPW
400
-
ps
DQS Output Access Time from Clock
tDQSCK
-255
+255
ps
Write DQS High Level Width
tDQSH
0.45
0.55
tCK(avg)
Write DQS Low Level Width
tDQSL
0.45
0.55
tCK(avg)
DQS-Out Edge to Data-Out Edge Skew
tDQSQ
-
125
ps
Data Input Setup Time Before DQS Strobe
tDS
30
-
ps
DQS Falling Edge from Clock, Hold Time
tDSH
0.2
-
tCK(avg)
DQS Falling Edge to Clock, Setup Time
tDSS
0.2
-
tCK(avg)
Clock Half Period
tHP
minimum of tCH or tCL
-
ns
Address and Command Hold Time after Clock
tIH
140
-
ps
DQ Input Pulse Width
tIS
65
-
ps
Load Mode Command Cycle Time
tMRD
4
-
tCK
DQ-to-DQS Hold
tQH
0.38
-
tCK(avg)
Active-to-Precharge Time
tRAS
36
9*tREFI
ns
Active-to-Active / Auto Refresh Time
tRC
49.5
-
ns
RAS-to-CAS Delay
tRCD
13.5
-
ns
-
7.8
μs
Address and Command Setup Time before Clock
o
o
tREFI
o
o
Average Periodic Refresh Interval 0 C < TCASE < 95 C
tREFI
-
3.9
μs
Auto Refresh Row Cycle Time
tRFC
110
-
ns
Row Precharge Time
tRP
13.5
-
ns
Read DQS Preamble Time
tRPRE
0.9
Note-1
tCK(avg)
Read DQS Postamble Time
tRPST
0.3
Note-2
tCK(avg)
Row Active to Row Active Delay
tRRD
Max(4nCK, 6ns)
-
ns
Internal Read to Precharge Command Delay
tRTP
Max(4nCK, 7.5ns)
-
ns
Average Periodic Refresh Interval 0 C < TCASE < 85 C
Write DQS Preamble Setup Time
tWPRE
0.9
-
tCK(avg)
Write DQS Postamble Time
tWPST
0.3
-
tCK(avg)
Write Recovery Time
tWR
15
-
ns
Internal Write to Read Command Delay
tWTR
Max(4nCK, 7.5ns)
-
ns
Notes:
1. The maximum preamble is bound by tLZDQS(min)
The maximum postamble is bound by tHZDQS(max)
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
Page 7
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
SERIAL PRESENCE DETECT MATRIX
Byte#
0
Function.
Value
1
Number of Bytes Used / Number of Bytes in SPD Device / CRC Coverage.
Bit 3 ~ Bit 0. SPD Bytes Used 176
Bit 6 ~ Bit 4. SPD Bytes Total 256
Bit 7. CRC Coverage - Bytes 0-116
SPD Revision.
Rev. 1.0
2
Key Byte / DRAM Device Type.
3
Key Byte / Module Type.
6
7
Module Organization.
RDIMM
0
0x02
1Gb
8 banks
0
0x11
10
14
0
UNUSED
8-Bits
1-Rank
0
10
Module Memory Bus Width.
Bit 2 ~ Bit 0. Primary bus width, in bits Bit 4, Bit 3. Bus width extension, in bits Bit 7 ~ Bit 5. Reserved Fine Timebase (FTB) Dividend / Divisor.
Bit 3 ~ Bit 0. Fine Timebase (FTB) Divisor
Bit 7 ~ Bit 4. Fine Timebase (FTB) Dividend
Medium Timebase (MTB) Dividend.
11
Medium Timebase (MTB) Divisor.
12
SDRAM Minimum Cycle Time (tCKmin).
2
5
1 (MTB =
0.125ns)
8 (MTB =
0.125ns)
1.5ns
13
Reserved.
UNUSED
14
CAS Latencies Supported, Least Significant Byte.
9
0x00
0x01
Bit 2 ~ Bit 0. SDRAM Device Width Bit 5 ~ Bit 3. Number of Ranks Bit 7, 6. Reserved
8
0x10
0x01
SDRAM Density and Banks.
Bit 3 ~ Bit 0. Total SDRAM capacity, in megabits Bit 6 ~ Bit 4. Bank Address Bits Bit 7. Reserved SDRAM Addressing.
Bit 2 ~ Bit 0. Column Address Bits Bit 5 ~ Bit 3. Row Address Bits Bit 7, 6. Reserved
Reserved.
5
0x92
DDR3 SDRAM 0x0B
Bit 3 ~ Bit 0. Module Type Bit 7 ~ Bit 4. Reserved -
4
Hex
0x0B
64-Bits
8-Bits
0
0x52
0x01
0x08
0x0C
0x00
0x74
Bit 0. CL = 4 Bit 1. CL = 5 Bit 2. CL = 6 Bit 3. CL = 7 Bit 4. CL = 8 Bit 5. CL = 9 Bit 6. CL = 10 Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
X
X
X
X
Page 8
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
Bit 7. CL = 11 15
CAS Latencies Supported, Most Significant Byte.
0x00
Bit 0. CL = 12 Bit 1. CL = 13 Bit 2. CL =14 Bit 3. CL = 15 Bit 4. CL = 16 Bit 5. CL = 17 Bit 6. CL = 18 Bit 7. Reserved.
16
Minimum CAS Latency Time (tAAmin).
13.5ns
0x6C
17
Minimum Write Recovery Time (tWRmin).
15.0ns
0x78
18
Minimum RAS# to CAS# Delay Time (tRCDmin).
13.5ns
0x6C
19
Minimum Row Active to Row Active Delay Time (tRRDmin).
6.0ns
0x30
20
Minimum Row Precharge Delay Time (tRPmin).
13.5ns
0x6C
21
Upper Nibbles for tRAS and tRC.
Bit 3 ~ Bit 0. tRAS Most Significant Nibble Bit 7 ~ Bit 4. tRC Most Significant Nibble Minimum Active to Precharge Delay Time (tRASmin), Least
Significant Byte.
Minimum Active to Active/Refresh Delay Time (tRCmin), Least
Significant Byte.
Minimum Refresh Recovery Delay Time (tRFCmin), Least
Significant Byte.
Minimum Refresh Recovery Delay Time (tRFCmin), Most
Significant Byte.
Minimum Internal Write to Read Command Delay Time
(tWTRmin).
Minimum Internal Read to Precharge Command Delay Time
(tRTPmin).
Upper Nibble for tFAW.
Bit 3 ~ Bit 0. tFAW Most Significant Nibble Bit 7 ~ Bit 4. Reserved Minimum Four Activate Window Delay Time (tFAWmin), Least
Significant Byte.
SDRAM Optional Features.
Bit 0. RZQ / 6 Bit 1. RZQ / 7 Bit 6 ~ Bit 2. Reserved Bit 7. DLL-Off Mode Support
SDRAM Drivers Supported.
Extended Temperature Range Extended Temperature Refresh Rate Auto Self Refresh (ASR) On-die Thermal Sensor (ODTS) Readout Reserved Reserved Reserved Reserved -
22
23
24
25
26
27
28
29
30
31
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
0x11
1
1
36.0ns
0x20
49.5ns
0x8C
110.0ns
0x70
110.0ns
0x03
7.5ns
0x3C
7.5ns
0x3C
0x00
0
0
240
0xF0
0x02
X
0x81
X
X
Page 9
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
32
Reserved
33-59 Reserved
Module Nominal Height.
Bit 4 ~ Bit 0. Module Nominal Height max, in mm Bit 7 ~ Bit5. Reserved 61 Module Maximum Thickness.
Bit 3 ~ Bit 0. Front, in mm (baseline thickness = 1 mm) Bit 7 ~ Bit 4. Back, in mm (baseline thickness = 1 mm) 62 Reference Raw Card Used.
Bit 4 ~ Bit 0. Reference Raw Card Bit 6, Bit 5. Reference Raw Card Revision Bit 7. Reserved 63 Address Mapping from Edge Connector to DRAM.
Bit 0. Rank 1 Mapping (Registered DIMM - Reserved) Bit 7 ~ Bit 1. Reserved 64-66 Module-Specific Section
€
0x80
UNUSED
0x00
60
67
Module-Specific Section
0x0F
29<h<=30
0
0x11
1<th<=2
1<th<=2
0x00
R/C A
Rev.0
0
0x05
UNUSED
0x00
ÿ
0xFF
68-112 Module-Specific Section
UNUSED
0x00
113
114116
117
118
119
120,12
1
122125
126
127
128131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
UNUSED
UNUSED
0x00
0x00
Module-Specific Section.
Module-Specific Section
Module Manufacturer ID Code, Least Significant Byte
Module Manufacturer ID Code, Most Significant Byte
Module Manufacturing Location
Module Manufacturing Date
UNUSED
Module Serial Number
Cyclical Redundancy Code (CRC).
Cyclical Redundancy Code (CRC).
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Module Part Number
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
0x01
0x91
0x00
0x20
0x20
CRC
CRC
0x46
0x82
0x20
D
A
T
A
R
A
M
0x44
0x41
0x54
0x41
0x52
0x41
0x4D
0x20
0x36
0x34
0x33
0x31
0x31
0x20
6
4
3
1
1
Page 10
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
146,14
7
148
149
150175
176255
Module Revision Code
0x20
DRAM Manufacturer ID Code, Least Significant Byte
DRAM Manufacturer ID Code, Most Significant Byte
Manufacturer’s Specific Data
UNUSED
UNUSED
UNUSED
0x00
0x00
0x00
Open for customer use
UNUSED
0x00
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
Page 11
DTM64311E
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
DATARAM CORPORATION, USA Corporate Headquarters, P.O.Box 7528, Princeton, NJ 08543-7528;
Voice: 609-799-0071, Fax: 609-799-6734; www.dataram.com
All rights reserved.
The information contained in this document has been carefully checked and is believed to be reliable. However,
Dataram assumes no responsibility for inaccuracies.
The information contained in this document does not convey any license under the copyrights, patent rights or
trademarks claimed and owned by Dataram.
No part of this publication may be copied or reproduced in any form or by any means, or transferred to any third party
without prior written consent of Dataram.
Document 06531, Revision A, 06-Jul-09 Dataram Corporation © 2009
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