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Download TSUPREM-4 Models - Advanced Materials Research Laboratory
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TSUPREM-4 User’s Manual Tutorial Examples default value of one atmosphere is used), and the final pressure is given by P.FINAL. Note that ramp rates could also have been specified in degrees/minute or atmospheres/minute, using the T.RATE and P.RATE parameters, respectively. $ TSUPREM-4 -- Example 1, Part B $ Bipolar active device region: Field oxide, base, and emitter $ Read structure INITIALIZE IN.FILE=S4EX1AS $ Grow the DIFFUSION DIFFUSION DIFFUSION DIFFUSION DIFFUSION field oxide TEMP=800 TIME=20 TEMP=1000 TIME=10 TEMP=1100 TIME=50 TEMP=1100 TIME=10 TEMP=1100 TIME=60 DRYO2 STEAM DRYO2 T.FINAL=1000 T.FINAL=1100 PRESSURE=5 PRESSURE=5 T.FINAL=800 P.FINAL=5 P.FINAL=1 $ Remove nitride and pad oxide ETCH NITRIDE ALL ETCH OXIDE ALL $ Implant the boron base IMPLANT BORON DOSE=2E13 ENERGY=100 $ Implant the phosphorus emitter IMPLANT PHOSPHORUS DOSE=1E15 ENERGY=50 $ Anneal to activate base and emitter regions DIFFUSION TEMP=1000 TIME=12 DRYO2 $ Plot results SELECT Z=LOG10(BORON) TITLE=”Active Region” LABEL=LOG(CONCENTRATION) PLOT.1D BOTTOM=13 TOP=21 RIGHT=5 LINE.TYP=5 COLOR=2 SELECT Z=LOG10(PHOSPHORUS) PLOT.1D ^AXES ^CLEAR LINE.TYP=4 COLOR=4 SELECT Z=LOG10(ARSENIC) PLOT.1D ^AXES ^CLEAR LINE.TYP=2 COLOR=3 SELECT Z=LOG10(ANTIMONY) PLOT.1D ^AXES ^CLEAR LINE.TYP=3 COLOR=3 $ Label the impurities LABEL X= 2.0 Y=15.1 LABEL X=-1.0 Y=19.5 LABEL X= 0.3 Y=15.8 LABEL X= 2.0 Y=18.4 LABEL=Boron LABEL=Phosphorus LABEL=Arsenic LABEL=Antimony $ Print the layer information SELECT Z=DOPING PRINT.1D X.V=0 LAYERS Figure 4-4 Listing of input file s4ex1b.inp, showing statements for simulating the field oxide, base, and emitter region processing for a bipolar transistor The third diffusion step does a 50-minute oxidation in steam, at a pressure of 5 atmospheres. Steps four and five ramp down the pressure, then the temperature. The remaining process steps are similar to those performed in the first part. The nitride and oxide are removed, and the base and emitter are implanted. 4-10 Confidential and Proprietary Draft 7/21/00 S4 2000.2
