Download Transcend 128MB SDRAM PC100 Unbuffer Non-ECC Memory
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128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Description Dimensions The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits B 65.67 2.585 Synchronous DRAMs in TSOP-II 400mil packages C 23.49 0.925 and a 2048 bits serial EEPROM on a 168-pin printed D 8.89 0.350 E 3.00 0.118 F 31.75±0.20 1.250±0.008 G 19.80 0.788 H 15.80 0.622 I 1.27±0.10 0.050±0.004 circuit board. The TS16MLS64V8C2 is a Dual In-Line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operation frequencies, (Refer Placement) programmable latencies allow the same device to be useful for a variety of high bandwidth, high Pin Identification performance memory system applications. Symbol Function A0~A11, BA0,BA1 Address input Features DQ0~DQ63 Data Input/Output. • Performance Range: PC-100 CL2. CLK0~CLK3 Clock Input.. • Conformed to JEDEC Standard 4 clocks. CKE0, CKE1 Clock Enable Input. • 16,777,216 words x 64 bits organization. /CS0~/CS3 Chip Select Input. /RAS Row Address Strobe /CAS Column Address Strobe /WE Write Enable DQM0~DQM7 Data (DQ) Mask SA0~SA2 Address in EEPROM SCL Serial PD Clock SDA Serial PD Add/Data input/output Vcc +3.3 Voltage Power Supply Vss Ground • Burst Mode Operation. • Auto and Self Refresh. • CKE Power Down Mode. • DQM Byte Masking (Read/Write) • Serial Presence Detect (SPD) with serial EEPROM • LVTTL compatible inputs and outputs. • Single 3.3V ± 0.3V power supply. • MRS cycle with address key programs. Latency (Access from column address) Burst Length (1,2,4,8 & Full Page) NC No Connection (Refer Block Diagram AND Pinouts) Data Scramble (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. Transcend information Inc. 1 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Placement A B C E D E H G F PCB: 09-7130 Transcend information Inc. 2 I 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Pinouts: Pin No 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Pin Name Vss DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 DQ8 Vss DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 NC NC Vss NC NC Vcc /WE DQM0 DQM1 /CS0 NC Vss A0 A2 A4 A6 A8 A10 BA1 Vcc Vcc CLK0 Transcend information Inc. Pin No 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Pin Name Vss NC /CS2 DQM2 DQM3 NC Vcc NC NC NC NC Vss DQ16 DQ17 DQ18 DQ19 Vcc DQ20 NC NC CKE1 Vss DQ21 DQ22 DQ23 Vss DQ24 DQ25 DQ26 DQ27 Vcc DQ28 DQ29 DQ30 DQ31 Vss CLK2 NC NC SDA SCL Vcc Pin No 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 3 Pin Name Vss DQ32 DQ33 DQ34 DQ35 Vcc DQ36 DQ37 DQ38 DQ39 DQ40 Vss DQ41 DQ42 DQ43 DQ44 DQ45 Vcc DQ46 DQ47 NC NC Vss NC NC Vcc /CAS DQM4 DQM5 /CS1 /RAS Vss A1 A3 A5 A7 A9 BA0 A11 Vcc CLK1 NC Pin No 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Pin Name Vss CKE0 /CS3 DQM6 DQM7 NC Vcc NC NC NC NC Vss DQ48 DQ49 DQ50 DQ51 Vcc DQ52 NC NC NC Vss DQ53 DQ54 DQ55 Vss DQ56 DQ57 DQ58 DQ59 Vcc DQ60 DQ61 DQ62 DQ63 Vss CLK3 NC SA0 SA1 SA2 Vcc 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 TS16MLS64V8C2-- Block Diagram DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 U4 UDQM D28 D29 D30 D31 D27 D26 D25 D24 D60 D61 D62 D63 D59 D58 D57 D56 /CS LDQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM3 D56 D57 D58 D59 D63 D62 D61 D60 D24 D25 D26 D27 D31 D30 D29 D28 DQM7 LDQM UDQM U2 DQM6 UDQM LDQM /CS3 SDRAM U1~U4,U6~U9 /CAS SDRAM U1~U4,U6~U9 CKE0 SDRAM U1~U4 CKE1 SDRAM U6~U9 DQn Every DQpin of SDRAM CLK2 10 /CS UDQM DQM7 LDQM U9 DQM3 UDQM LDQM U1/U3 SDRAM U1~U4,U6~U9 /RAS U7 DQM2 UDQM LDQM CLK0 A0~A12,BA0,BA1 /CS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 D23 D22 D21 D20 D16 D17 D18 D19 D55 D54 D53 D52 D48 D49 D50 D51 U8 DQM1 UDQM DQM4 DQM0 LDQM U6 /CS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 D11 D10 D9 D8 D12 D13 D14 D15 D44 D45 D46 D47 D43 D42 D41 D40 DQM5 /CS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM6 /CS1 D3 D2 D1 D0 D4 D5 D6 D7 D36 D37 D38 D39 D35 D34 D33 D32 /CS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 D51 D50 D49 D48 D52 D53 D54 D55 D19 D18 D17 D16 D20 D21 D22 D23 U3 DQM5 UDQM DQM0 LDQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 D40 D41 D42 D43 D47 D46 D45 D44 D15 D14 D13 D12 D8 D9 D10 D11 U1 /CS DQM1 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM4 D32 D33 D34 D35 D39 D38 D37 D36 D7 D6 D5 D4 D0 D1 D2 D3 /CS2 /CS DQM2 /CS0 U2/U4 10 15pf CLK1 15pf U6/U8 CLK3 10 U7/U9 10 15pf 15pf 10 VDD Two 0.33uf per each SDRAM VSS VDD To all SDRAMs VSS VDD Serial EEPROM SCL 10k CKE1 To all SDRAMs 0.1uf per each SDRAM SCL A0 SDA A1 SDA A2 SA0 SA1 SA2 SDRAM U6~U9 This technical information is based on industry standard data and tests believed to be reliable. However, Transcend makes no warranties, either expressed or implied, as to its accuracy and assume no liability in connection with the use of this product. Transcend reserves the right to make changes in specifications at any time without prior notice. Transcend information Inc. 4 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0~4.6 V Voltage on VDD supply to Vss VDD, VDDQ -1.0~4.6 V TSTG -55~+150 °C Power dissipation PD 8 W Short circuit current IOS 50 mA MTBF 50 Years Storage temperature Mean time between failure Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS Recommended operating conditions (Voltage referenced to Vss = 0V, T A = 0 to 70°C) Parameter Symbol Min Typ Max Unit Note Supply voltage VDD 3.0 3.3 3.6 V Input high voltage VIH 2.0 3.0 VDD+0.3 V 1 Input low voltage VIL -0.3 0 0.8 V 2 Output high voltage VOH 2.4 - - V IOH=-2mA Output low voltage VOL - - 0.4 V IOL=2mA Input leakage current (Inputs) IIL -8 - 8 uA 3 Input leakage current (I/O pins) IOL -3 - 3 uA 4 Note: 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. 4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ. Transcend information Inc. 5 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 CAPACITANCE (TA = 25°C, f = 1MHz) Parameter Symbol Min Max Unit Input capacitance (A0~A11, BA0~ BA1) CIN1 - 60 pF Input capacitance (/RAS, /CAS, /WE) CIN2 - 60 pF Input capacitance (CKE0~CKE1) CIN3 - 35 pF Input capacitance (CLK0~CLK3) CIN4 - 25 pF Input capacitance (/CS0~/CS3) CIN5 - 25 pF Input capacitance (DQM0~DQM7) CIN6 - 15 pF Data input/output capacitance (DQ0~DQ63) COUT - 15 pF Transcend information Inc. 6 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating Current (One Bank Active) Symbol ICC2N Active Standby Current in power-down mode ICC2NS Unit Note 600 mA 1 CKE≤VIL(max), tCC=15ns 8 CKE & CLK≤VIL(max), tCC=∞ 8 CKE≥VIH(min), /CS≥VIH(min), tCC=15ns Input signals are changed one time during 30ns CKE≥VIH(min), CLK≤VIL(max), tCC=∞ mA 120 mA 56 Input signals are stable CKE≤VIL(max), tCC=15ns 40 ICC3PS CKE & CLK≤VIL(max), tCC=∞ 40 CKE≥VIH(min), /CS≥VIH(min), tCC=15ns Input signals are changed one time during 30ns mA 240 mA ICC3NS Operating Current (Bust Mode) ICC4 Refresh Current ICC5 160 CKE≥VIH(min), CLK≤VIL(max), tCC=∞ Input signals are stable IOL= 0 mA Page Burst tccD = 2CLKs Self Refresh Current ICC6 Note 1. Measured with outputs open. 2. Refresh period is 64ms. Transcend information Inc. Value ICC3P ICC3N Active Standby Current in non power-down mode (One Bank Active) CAS Latency Burst Length =1 tRC≥tRC(min) IOL=0mA ICC1 Precharge Standby Current ICC2P in power-down mode ICC2PS Precharge Standby Current in non power-down mode Test Condition 7 3 700 2 700 mA 1 2 tRC≥tRC(min) 1600 mA CKE≤0.2V 12 mA 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 AC OPERATING TEST CONDITIONS (VDD = 3.3V±0.3V, TA = 0 to 70°C) Parameter AC Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value Unit 2.4/0.4 V 1.4 V tr/tf=1/1 ns 1.4 V See Fig. 2 Vtt=1.4V 3.3V 50 Ohm 1200 Ohm Output Output VOH (DC)=2.4V, I OH=-2mA VOL (DC)=0.4V, I OL=2mA Z0=50 Ohm 50pF 50pF 870 Ohm (Fig. 2) AC Output Load Circuit (Fig. 1) DC Output Load Circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Symbol Value Unit Note ns ns ns ns us ns CLK CLK CLK CLK 1 1 1 1 1 2 2 2 3 CAS latency=3 20 20 20 50 100 70 1 1 1 1 2 ea 4 CAS latency=2 1 Row active to row active delay /RAS to /CAS delay Row precharge time tRRD(min) tRCD(min) tRP(min) tRAS(min) tRAS(max) tRC(min) tCDL(min) tRDL(min) tBDL(min) tCCD(min) Row active time Row cycle time Last data in to new col. address delay Last data in to row precharge Last data in to burst stop Col. address to col. address delay Number of valid output data Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time, and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. Transcend information Inc. 8 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Refer to the individual component, not the whole module. Parameter Symbol Value Min CLK cycle time CAS latency=3 CAS latency=2 CLK to valid output delay CAS latency=3 Output data hold time CAS latency=3 10 tCC Unit Note ns 1 ns 1, 2 ns 2 Max 1000 10 6 tSAC CAS latency=2 6 3 tOH CAS latency=2 3 CLK high pulse width tCH 3 ns 3 CLK low pulse width tCL 3 ns 3 Input setup time tSS 2 ns 3 Input hold time tSH 1 ns 3 CLK to output in Low-Z tSLZ 1 ns 2 CLK to output in Hi-Z CAS latency=3 6 tSHZ 6 CAS latency=2 Note: 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5) ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf)= 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. Transcend information Inc. 9 ns 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 FREQUENCY vs. AC PARAMETER RELATIONSHIP TABLE Frequency CAS tRC tRAS TRP tRRD tRCD tCCD tCDL tRDL Latency 70ns 48ns 20ns 16ns 20ns 8ns 8ns 8ns 100MHz(10.0ns) 2 7 5 2 2 2 1 1 1 83MHz(12.0ns) 2 6 5 2 2 2 1 1 1 75MHz(13.0ns) 2 6 4 2 2 2 1 1 1 66MHz(15.0ns) 2 5 4 2 2 2 1 1 1 Transcend information Inc. 10 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 SIMPLIFIED TRUTH TABLE COMMAND Register /CS /RAS /CAS /WE DQM BA0,1 A10/AP H X L L L L X OP CODE H H L L L L H X X L H L H H X H X H X X X H X L L H H X V H X L H L H X V H X L H L L X V H X L H H L X H X L L H L X Clock Suspend or Entry Active Power Down Exit H X X X H L L V V V L H X X X X H X X X Entry H L L H H H H X X X Refresh Mode Register Set CKEn-1 CKEn Auto Refresh Entry Self Exit Refresh Bank Active & Row Addr. Read & Column Address Write & Column Address Auto Precharge Disable Auto Precharge Enable Auto Precharge Enable Burst Stop Precharge Precharge Power Down Mode Bank Selection Both Banks Exit L H L DQM No Operation Command H L H H V V V X X H X X X L H H H 1,2 3 3 3 3 H L H 4, 5 Column Address (A0~A8) 4, 5 11 4 6 X X X X X X X V X X X (V=Valid, X=Don’t Care, H=Logic High, L=Logic Low) Note: 1. OP Code: Operand Code A0~A11, BA0~BA1: Program keys. (@MRS) 2. MRS can be issued only at both banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatically precharge without row precharge command is meant by “Auto”. Auto/self refresh can be issued only at both banks precharge state. 4. BA0~BA1: Bank select address. If both BA0 and BA1 are “Low” at read, write, row active and precharge, bank A is selected. If both BA0 is “Low” and BA1 is “High” at read, write, row active and precharge, bank B is selected. If both BA0 is “High” and BA1 is “Low” at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are “High” at read, write, row active and precharge, bank D is selected. If A10/AP is “High” at row precharge, BA0 and BA1 is ignored and both banks are selected. 5. During burst read or write with auto precharge, new read/write command cannot be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edged of a CLK masks the data-in at the very CLK (Write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2) Transcend information Inc. 4 Column Address (A0~A8) X V X Note Row Address L Auto Precharge Disable A11, A0~A9 7 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Serial Presence Detect Specification Serial Presence Detect Byte No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Function Described # of Bytes Written into Serial Memory Total # of Bytes of S.P.D Memory Fundamental Memory Type # of Row Addresses on this Assembly # of Column Addresses on this Assembly # of Module Banks on this Assembly Data Width of this Assembly Data Width Continuation Voltage Interface Standard of this Assembly SDRAM Cycle Time (highest CAS latency) SDRAM Access from Clock (highest CL) DIMM configuration type (non-parity, ECC) Refresh Rate Type Primary SDRAM Width Error Checking SDRAM Width Min Clock Delay Back to Back Random Address Burst Lengths Supported Number of banks on each SDRAM device CAS # Latency CS # Latency Write Latency SDRAM Module Attributes SDRAM Device Attributes: General nd 23 24 25 26 27 28 29 30 31 32 33 34 35 36-61 62 63 64-71 72 SDRAM Cycle Time (2 highest CL) nd SDRAM Access from Clock (2 highest CL) rd SDRAM Cycle Time (3 highest CL) rd SDRAM Access from Clock (3 highest CL) Minimum Row Precharge Time Minimum Row Active to Row Activate Minimum RAS to CAS Delay Minimum RAS Pulse Width Density of Each Bank on Module Command/Address Setup Time Command/Address Hold Time Data Signal Setup Time Data Signal Hold Time Superset Information SPD Data Revision Code Checksum for Bytes 0-62 Manufacturers JEDEC ID Code per JEP-108E Manufacturing Location 73-90 Manufacturers Part Number 91-92 93-94 Revision Code Manufacturing Date Transcend information Inc. Standard Specification 128bytes 256bytes SDRAM A0~A11 A0~A8 2 bank 64bits 0 LVTTL3.3V 10ns 6ns None 15.625us/Self Refresh x16 1 clock 1,2,4,8 & Full page 4 bank 3,2 0 clock 0 clock Non Buffer Prec All, Auto Prec, R/W Burst 10ns 6ns 0 0 20 20 20 50 64MB 2ns 1ns 2ns 1ns Version 1.2 Transcend T TS16MLS64V8C2 By Manufacturer 12 Vendor Part 80 08 04 0C 09 02 40 00 01 A0 60 00 80 10 00 01 8F 04 06 01 01 00 0E A0 60 00 00 14 14 14 32 10 20 10 20 10 00 12 0E 7F, 4F 54 54 53 31 36 4D 4C 53 36 34 56 38 43 32 20 20 20 20 20 0 Variable 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 95-98 99-125 126 127 128~ Assembly Serial Number Manufacturer Specific Data Intel Specification Frequency Intel Specification CAS# Latency/Clock Signal Support Unused Storage Locations Transcend information Inc. 13 By Manufacturer 100MHz CL=2,3 Clock=0~3 Open Variable 0 64 F6 FF