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DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
Identification
DTM64314D 512Mx72
4GB 2Rx8 PC3-10600E-9-11-E1
Performance range
Clock / Module Speed / CL-tRCD -tRP
667 MHz / PC3-10600 / 9-9-9
533 MHz / PC3-8500 / 8-8-8
533 MHz / PC3-8500 / 7-7-7
400 MHz / PC3-6400 / 6-6-6
Description
Features
240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high
Operating Voltage: 1.5 V ±0.075 V, I/O Type: SSTL_15
2
On-board I C temperature sensor with integrated Serial PresenceDetect (SPD) EEPROM
Data Transfer Rate: 10.6 Gigabytes/sec
Data Bursts: 8 and burst chop 4 mode
ZQ Calibration for Output Driver and On-Die Termination (ODT)
Programmable ODT / Dynamic ODT during Writes
DTM64314D is an Unbuffered 512Mx72
memory module, which conforms to
JEDEC's DDR3, PC3-10600 standard. The
assembly is Dual-Rank. Each Rank is
comprised of nine 256Mx8 DDR3-1333
Hynix SDRAMs. One 2K-bit EEPROM is
used for Serial Presence Detect.
A thermal sensor accurately monitors the
DIMM module and can prevent exceeding
the maximum operating temperature of 95C.
Both output driver strength and input
termination impedance are programmable to
maintain signal integrity on the I/O signals.
Programmable CAS Latency: 6, 7, 8, and 9
Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 15/10/3
Fully RoHS Compliant
Pin Configuration
Front Side
Back Side
1 VREFDQ 31 DQ25
61 A2
91 DQ41 121 VSS
2 VSS
62 VDD
92 VSS
63 CK1
64 /CK1
65 VDD
66 VDD
93
94
95
96
3
4
5
6
32 VSS
DQ0 33 /DQS3
DQ1 34 DQS3
VSS
35 VSS
/DQS0 36 DQ26
Pin Description
151 VSS
122 DQ4 152 DM3
/DQS5 123 DQ5
DQS5 124 VSS
VSS
125 DM0
DQ42 126 NC
153 NC
154 VSS
155 DQ30
156 DQ31
Name
Function
181 A1
211 VSS
CB[7:0]
Data Check Bits
182 VDD
212 DM5
DQ[63:0]
Data Bits
183 VDD
184 CK0
185 /CK0
186 VDD
213 NC
214 VSS
215 DQ46
216 DQ47
DQS[8:0], /DQS[8:0]
DM[8:0]
CK[1:0], /CK[1:0]
CKE[1:0]
Differential Data Strobes
Data Mask
Differential Clock Inputs
Clock Enables
7 DQS0 37 DQ27
8 VSS
38 VSS
9 DQ2 39 CB0
67 VREFCA
97 DQ43 127 VSS 157 VSS
68 PAR_IN, NC* 98 VSS
128 DQ6 158 CB4
69 VDD
99 DQ48 129 DQ7 159 CB5
187 /Event
188 A0
189 VDD
217 VSS
218 DQ52
219 DQ53
/CAS
/RAS
/S[3:0]
Column Address Strobe
Row Address Strobe
Chip Selects
10 DQ3
11 VSS
12 DQ8
40 CB1
41 VSS
42 /DQS8
70 A10/AP
71 BA0
72 VDD
100 DQ49 130 VSS 160 VSS
101 VSS
131 DQ12 161 DM8
102 /DQS6 132 DQ13 162 NC
190 BA1
191 VDD
192 /RAS
220 VSS
221 DM6
222 NC
/WE
A[15:0]
BA[2:0]
Write Enable
Address Inputs
Bank Addresses
13 DQ9
43 DQS8
193 /S0
223 VSS
ODT[1:0]
On Die Termination Inputs
224 DQ54
225 DQ55
226 VSS
227 DQ60
SA[2:0]
SCL
SDA
/EVENT
SPD Address
SPD Clock Input
SPD Data Input/Output
Temperature Sensing
73 /WE
103 DQS6 133 VSS
14 VSS
44 VSS
15 /DQS1 45 CB2
16 DQS1 46 CB3
17 VSS
47 VSS
74 /CAS
75 VDD
76 /S1
77 ODT1
104 VSS
105 DQ50
106 DQ51
107 VSS
163 VSS
18 DQ10 48 VTT, NC
19 DQ11 49 VTT, NC
20 VSS
50 CKE0
78 VDD
79 /S2, NC
80 VSS
108 DQ56 138 DQ15 168 /RESET
109 DQ57 139 VSS 169 CKE1
110 VSS
140 DQ20 170 VDD
198 /S3, NC* 228 DQ61
199 VSS
229 VSS
200 DQ36
230 DM7
/RESET
PAR_IN
/ERR_OUT
Reset for register and DRAMs
Parity bit for Addr/Ctrl
Error bit for Parity Error
21 DQ16 51 VDD
81 DQ32
111 /DQS7 141 DQ21 171 A15*
201 DQ37
231 NC
A12/BC
Combination input: Addr12/Burst Chop
22 DQ17 52 BA2
23 VSS
53 /ERR_OUT, NC*
24 /DQS2 54 VDD
25 DQS2 55 A11
26 VSS
56 A7
27 DQ18 57 VDD
82 DQ33
83 VSS
84 /DQS4
85 DQS4
86 VSS
87 DQ34
112 DQS7
113 VSS
114 DQ58
115 DQ59
116 VSS
117 SA0
142 VSS 172 A14*
143 DM2 173 VDD
144 NC 174 A12/BC
145 VSS 175 A9
146 DQ22 176 VDD
147 DQ23 177 A8
202 VSS
203 DM4
204 NC
205 VSS
206 DQ38
207 DQ39
232 VSS
233 DQ62
234 DQ63
235 VSS
236 VDDSPD
237 SA1
A10/AP
VSS
VDD
VDDSPD
VREFDQ
VREFCA
Combination input: Addr10/Auto-precharge
Ground
Power
SPD EEPROM Power
Reference Voltage for DQ’s
Reference Voltage for CA
28 DQ19 58 A5
29 VSS
59 A4
30 DQ24 60 VDD
88 DQ35
89 VSS
90 DQ40
118 SCL
119 SA2
120 VTT
148 VSS 178 A6
149 DQ28 179 VDD
150 DQ29 180 A3
208 VSS
209 DQ44
210 DQ45
238 SDA
239 VSS
240 VTT
VTT
NC
Termination Voltage
No Connection
134 DM1 164 CB6
194 VDD
135 NC 165 CB7
195 ODT0
136 VSS 166 VSS
196 A13
137 DQ14 167 NC (TEST) 197 VDD
* Not used
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 1
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
Front view
133.35
[5.250]
9.50
[0.374]
30.00
[1.181]
17.30
[0.681]
5.00
[0.197]
5.175
[0.204]
47.00
[1.850]
71.00
[2.795]
2.50
[0.098]
123.00
[4.843]
Back view
Side view
4.00 Max
[0.157 Max
4.00 Min
[0.157] Min
1.27 ±.10
[0.0500 ±0.0040]
Notes
Tolerances on all dimensions except where otherwise
indicated are ±.13 (.005).
All dimensions are expressed: millimeters [inches]
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 2
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
/S1
/S0
DMR0
DQSR0
/DQSR0
DMR4
DQSR4
/DQSR4
/DQS
DQR[7:0]
DQS
CS
/CS DM
I/O[7:0]
/DQS
DQS
CS
/CS DM
I/O[7:0]
DMR1
DQSR1
/DQSR1
DQS
CS
/CS DM
/DQS
DQS
CS
/CS DM
I/O[7:0]
I/O[7:0]
/CS DM
/DQS
DQS
CS
/CS DM
DQS
CS
/CS DM
DQS
CS
/CS DM
DQS
CS
/CS DM
I/O[7:0]
DQS
CS
/DQS
/CS DM
I/O[7:0]
I/O[7:0]
DMR6
DQSR6
/DQSR6
/DQS
DQS
CS
/CS DM
I/O[7:0]
/DQS
DQS
CS
/CS DM
/DQS
DQR[55:48]
I/O[7:0]
DMR3
DQSR3
/DQSR3
DQS
/CS DM
CS
/DQS
I/O[7:0]
I/O[7:0]
DMR7
DQSR7
/DQSR7
/DQS
DQR[31:24]
/DQS
DQR[47:40]
DMR2
DQSR2
/DQSR2
DQR[23:16]
DQS
CS
I/O[7:0]
DMR5
DQSR5
/DQSR5
/DQS
DQR[15:8]
/DQS
DQR[39:32]
DQS
CS
/CS DM
/DQS
I/O[7:0]
DQS
CS
/CS DM
I/O[7:0]
/DQS
DQR[63:56]
DQS
CS
/CS DM
/DQS
I/O[7:0]
I/O[7:0]
DMR8
DQSR8
/DQSR8
/DQS
CBR[7:0]
DQS
CS
/CS DM
/DQS
I/O[7:0]
DQS
CS
/CS DM
I/O[7:0]
All 15 OHMS
DQR[63:0]
DQ[63:0]
CB[7:0]
2.2 pF
CBR[7:0]
DQS[8:0]
DQSR[8:0]
/DQS[8:0]
/DQSR[8:0]
CK[1:0]
/CK[1:0]
DMR[8:0]
DM[8:0]
VDD
All 36 OHMS 100 nf
/CK0
GLOBAL SDRAM CONNECTS
CK0
100 nf
All 39 OHMS
/CK1
BA[2:0]
CK1
A[14:0]
/RAS
/CAS
/WE
VTT
All 39 OHMS
CKE[1:0]
ODT[1:0]
/S[1:0]
VTT
VDDSPD
VDD
VREF_DQ
VSS
VREF_CA
VTT
DECOUPLING
Serial PD
All Devices
All SDRAMs
All Devices
All SDRAMs
All SDRAMs
/EVENT
All 240 OHMS
SCL
ZQ
VSS
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
TEMPERATURE MONITOR/
SERIAL PD
SA0
SA1
SDA
SA2
Page 3
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
Absolute Maximum Ratings
(Note: Operation at or above Absolute Maximum Ratings can adversely affect module reliability.)
PARAMETER
Symbol
Minimum
Maximum
Unit
Temperature, non-Operating
TSTORAGE
-55
100
C
TA
0
70
C
Ambient Temperature, Operating
DRAM Case Temperature, Operating
TCASE
0
95
C
VDD
-0.4
1.975
V
VIN,VOUT
-0.4
1.975
V
Voltage on VDD relative to VSS
Voltage on Any Pin relative to VSS
Notes:
DRAM Operating Case Temperature above 85C requires 2X refresh.
Recommended DC Operating Conditions (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Power Supply Voltage
Symbol
VDD
Minimum
1.425
Typical
1.5
Maximum
1.575
Unit
V
Note
I/O Reference Voltage
VREFDQ
0.49 VDD
0.50 VDD
0.51 VDD
V
1
I/O Reference Voltage
VREFCA
0.49 VDD
0.50 VDD
0.51 VDD
V
1
Notes:
The value of VREF is expected to equal one-half VDD and to track variations in the VDD DC level. Peak-to-peak noise on VREF may not
exceed ±1% of its DC value. For Reference VDD/2 ± 15 mV.
DC Input Logic Levels, Single-Ended (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Logical High (Logic 1)
Symbol
VIH(DC)
Minimum
VREF + 0.1
Maximum
VDD
Unit
V
Logical Low (Logic 0)
VIL(DC)
VSS
VREF - 0.1
V
AC Input Logic Levels, Single-Ended (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Logical High (Logic 1)
Symbol
VIH(AC)
Minimum
VREF + 0.175
Maximum
-
Unit
V
Logical Low (Logic 0)
VIL(AC)
-
VREF - 0.175
V
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 4
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
Differential Input Logic Levels (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Differential Input Logic High
Differential Input Logic Low
Differential Input Cross Point Voltage
relative to VDD/2
Symbol
VIH.DIFF
Minimum
+0.200
Maximum
DC:VDD AC:VDD+0.4
Unit
V
VIL.DIFF
DC:VSS AC:VSS-0.4
-0.200
V
VIX
- 0.150
+ 0.150
V
Capacitance (TA = 25 C, f = 100 MHz)
PARAMETER
Pin
Symbol
Minimum
Maximum
Unit
CCK
7.2
13.5
pF
Input Capacitance, Clock
CK0, /CK0, CK1, /CK1
Input Capacitance, Address
BA[2:0], A[14:0], /RAS, /CAS, /WE
CI
13.5
27
pF
Input Capacitance Control
/S0, /S1, CKE0, CKE1, ODT0, ODT1
CI
6.8
13.5
pF
Input/Output Capacitance
DQ[63:0], CB[7:0] DQS[8:0], /DQS[8:0],
DM[8:0]
CIO
3
5
pF
ZQ Capacitance
ZQ
CZQ
-
6
pF
DC Characteristics (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Input Leakage Current
Symbol
Minimum
Maximum
Unit
Note
IIL
-18
+18
µA
1,2
IOL
-10
+10
µA
2,3
(Any input 0 V < VIN < VDD)
Output Leakage Current
(0V < VOUT < VDDQ)
Notes:
1) All other pins not under test = 0 V
2) Values are shown per pin
3) DQ’s, DQS, DQS and ODT are disabled
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 5
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
IDD Specifications and Conditions (TA = 0 to 70 C, Voltage referenced to Vss = 0 V)
PARAMETER
Operating One
Bank ActivePrecharge Current
Operating One
Bank Active-ReadPrecharge Current
Precharge PowerDown Current
Precharge PowerDown Current
Precharge Quiet
Standby Current
Precharge Standby
Current
Active Power-Down
Current
Active Standby
Current
Operating Burst
Write Current
Operating Burst
Read Current
Burst Refresh
Current
Self Refresh
Current
Operating Bank
Interleave Read
Current
Symbol
IDD0*
IDD1*
IDD2P**
IDD2P**
IDD2Q**
IDD2N**
IDD3P**
IDD3N**
IDD4W*
IDD4R*
IDD5**
IDD6**
IDD7**
Test Condition
Operating current : One bank ACTIVATE-to-PRECHARGE
Operating current : One bank ACTIVATE-to-READ-toPRECHARGE
Precharge power down current: (Slow exit)
Precharge power down current: (Fast exit)
Precharge quiet standby current
Precharge standby current
Active power-down current
Active standby current
Burst write operating current
Burst read operating current
Refresh current
Self-refresh temperature current: MAX TC = 85°C
All bank interleaved read current
Max
Value
Unit
468
mA
558
mA
216
mA
270
mA
414
mA
450
mA
270
mA
486
mA
873
mA
918
mA
2070
mA
216
mA
3240
mA
* One module rank in this operation rest in IDD2P slow exit.
** All module ranks in this operation.
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 6
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
AC Operating Conditions
PARAMETER
Symbol
Min
Max
Unit
Internal read command to first data
tAA
13.125
20
ns
CAS-to-CAS Command Delay
tCCD
4
-
tCK
tCH(avg)
0.47
0.53
tCK
tCK
1.5
1.875
ns
tCL(avg)
0.47
0.53
tCK
tDH
65
-
ps
Clock High Level Width
Clock Cycle Time
Clock Low Level Width
Data Input Hold Time after DQS Strobe
DQ Input Pulse Width
tDIPW
400
-
ps
DQS Output Access Time from Clock
tDQSCK
-255
+255
ps
Write DQS High Level Width
tDQSH
0.45
0.55
tCK(avg)
Write DQS Low Level Width
tDQSL
0.45
0.55
tCK(avg)
DQS-Out Edge to Data-Out Edge Skew
tDQSQ
-
125
ps
Data Input Setup Time Before DQS Strobe
tDS
30
-
ps
DQS Falling Edge from Clock, Hold Time
tDSH
0.2
-
tCK(avg)
DQS Falling Edge to Clock, Setup Time
tDSS
0.2
-
tCK(avg)
Clock Half Period
tHP
minimum of tCH or tCL
-
ns
Address and Command Hold Time after Clock
tIH
140
-
ps
Address and Command Setup Time before Clock
tIS
65
-
ps
Load Mode Command Cycle Time
tMRD
4
-
tCK
DQ-to-DQS Hold
tQH
0.38
-
tCK(avg)
Active-to-Precharge Time
tRAS
36
9*tREFI
ns
Active-to-Active / Auto Refresh Time
tRC
49.125
-
ns
RAS-to-CAS Delay
tRCD
13.125
-
ns
-
7.8
µs
o
o
tREFI
o
o
Average Periodic Refresh Interval 0 C < TCASE < 95 C
tREFI
-
3.9
µs
Auto Refresh Row Cycle Time
tRFC
160
-
ns
Row Precharge Time
tRP
13.125
-
ns
Read DQS Preamble Time
tRPRE
0.9
Note-1
tCK(avg)
Read DQS Postamble Time
tRPST
0.3
Note-2
tCK(avg)
Row Active to Row Active Delay
tRRD
Max(4nCK, 6ns)
-
ns
Internal Read to Precharge Command Delay
tRTP
Max(4nCK, 7.5ns)
-
ns
Write DQS Preamble Setup Time
tWPRE
0.9
-
tCK(avg)
Write DQS Postamble Time
tWPST
0.3
-
tCK(avg)
Write Recovery Time
tWR
15
-
ns
Internal Write to Read Command Delay
tWTR
Max(4nCK, 7.5ns)
-
ns
Average Periodic Refresh Interval 0 C < TCASE < 85 C
Notes:
1.
2.
The maximum preamble is bound by tLZDQS(min)
The maximum postamble is bound by tHZDQS(max)
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 7
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
SERIAL PRESENCE DETECT MATRIX
Byte#
Function.
Value
Hex
176
256
Bytes 0-116
0x92
SPD Revision.
Rev. 1.1
0x11
Key Byte / DRAM Device Type.
DDR3
SDRAM
0x0B
Number of Bytes Used / Number of Bytes in SPD Device / CRC Coverage.
Bit 3 ~ Bit 0. SPD Bytes Used Bit 6 ~ Bit 4. SPD Bytes Total Bit 7. CRC Coverage -
0
1
2
Key Byte / Module Type.
3
4
Bit 3 ~ Bit 0. Module Type Bit 7 ~ Bit 4. Reserved -
UDIMM
0
0x02
SDRAM Density and Banks.
Bit 3 ~ Bit 0. Total SDRAM capacity, in megabits Bit 6 ~ Bit 4. Bank Address Bits Bit 7. Reserved -
2Gb
8 banks
0
0x03
10
15
0
0x19
SDRAM Addressing.
Bit 2 ~ Bit 0. Column Address Bits Bit 5 ~ Bit 3. Row Address Bits Bit 7, 6. Reserved
5
Module Nominal Voltage, VDD.
Bit 0. NOT 1.5 V operable Bit 1. 1.35 V operable Bit 2. 1.2X V operable Bit 3. Reserved Bit 4. Reserved Bit 5. Reserved Bit 6. Reserved Bit 7. Reserved -
6
0x00
Module Organization.
7
Bit 2 ~ Bit 0. SDRAM Device Width Bit 5 ~ Bit 3. Number of Ranks Bit 7, 6. Reserved
8-Bits
2-Rank
0
0x09
Bit 2 ~ Bit 0. Primary bus width, in bits Bit 4, Bit 3. Bus width extension, in bits Bit 7 ~ Bit 5. Reserved -
64-Bits
8-Bits
0
0x0B
2
5
1 (MTB =
0.125ns)
0x52
Module Memory Bus Width.
8
9
10
Fine Timebase (FTB) Dividend / Divisor.
Bit 3 ~ Bit 0. Fine Timebase (FTB) Divisor
Bit 7 ~ Bit 4. Fine Timebase (FTB) Dividend
Medium Timebase (MTB) Dividend.
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
0x01
Page 8
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
11
Medium Timebase (MTB) Divisor.
12
SDRAM Minimum Cycle Time (tCKmin).
13
Reserved.
8 (MTB =
0.125ns)
0x08
1.5ns
0x0C
UNUSED
0x00
CAS Latencies Supported, Least Significant Byte.
Bit 0. CL = 4 Bit 1. CL = 5 Bit 2. CL = 6 Bit 3. CL = 7 Bit 4. CL = 8 Bit 5. CL = 9 Bit 6. CL = 10 Bit 7. CL = 11 -
14
X
X
X
X
0x3C
CAS Latencies Supported, Most Significant Byte.
Bit 0. CL = 12 Bit 1. CL = 13 Bit 2. CL =14 Bit 3. CL = 15 Bit 4. CL = 16 Bit 5. CL = 17 Bit 6. CL = 18 Bit 7. Reserved.
15
16
Minimum CAS Latency Time (tAAmin).
17
Minimum Write Recovery Time (tWRmin).
18
Minimum RAS# to CAS# Delay Time (tRCDmin).
19
Minimum Row Active to Row Active Delay Time (tRRDmin).
20
Minimum Row Precharge Delay Time (tRPmin).
0x00
13.125ns
0x69
15.0ns
0x78
13.125ns
0x69
6.0ns
0x30
13.125ns
0x69
1
1
0x11
36.0ns
0x20
49.125ns
0x89
160.0ns
0x00
160.0ns
0x05
Upper Nibbles for tRAS and tRC.
21
22
23
24
25
Bit 3 ~ Bit 0. tRAS Most Significant Nibble Bit 7 ~ Bit 4. tRC Most Significant Nibble Minimum Active to Precharge Delay Time (tRASmin), Least
Significant Byte.
Minimum Active to Active/Refresh Delay Time (tRCmin), Least
Significant Byte.
Minimum Refresh Recovery Delay Time (tRFCmin), Least Significant
Byte.
Minimum Refresh Recovery Delay Time (tRFCmin), Most Significant
Byte.
26
Minimum Internal Write to Read Command Delay Time (tWTRmin).
7.5ns
0x3C
27
Minimum Internal Read to Precharge Command Delay Time
(tRTPmin).
7.5ns
0x3C
28
Upper Nibble for tFAW.
0x00
Bit 3 ~ Bit 0. tFAW Most Significant Nibble -
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
0
Page 9
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
29
Bit 7 ~ Bit 4. Reserved Minimum Four Activate Window Delay Time (tFAWmin), Least
Significant Byte.
0
30.0ns
0xF0
Bit 0. RZQ / 6 Bit 1. RZQ / 7 Bit 6 ~ Bit 2. Reserved Bit 7. DLL-Off Mode Support
X
X
0x83
Extended Temperature Range Extended Temperature Refresh Rate Auto Self Refresh (ASR) On-die Thermal Sensor (ODTS) Readout Reserved Reserved Reserved Partial Array Self Refresh (PASR) -
X
SDRAM Optional Features.
30
SDRAM Drivers Supported.
31
0x01
Module Thermal Sensor.
32
Bit 6 ~ Bit 0. Thermal Sensor Accuracy Bit 7. Thermal Sensor -
0
With TS
0x80
Bit 6 ~ Bit 0. Non-Standard Device Description Bit 7. SDRAM Device Type -
0
Std Mono
0x00
UNUSED
0x00
29<h<=30
0
0x0F
1<th<=2
1<th<=2
0x11
R/C E
Rev.1
0
0x24
Mirrored
0
0x01
SDRAM Device Type.
33
34-59
Reserved
Module Nominal Height.
60
Bit 4 ~ Bit 0. Module Nominal Height max, in mm Bit 7 ~ Bit5. Reserved Module Maximum Thickness.
61
Bit 3 ~ Bit 0. Front, in mm (baseline thickness = 1 mm) Bit 7 ~ Bit 4. Back, in mm (baseline thickness = 1 mm) Reference Raw Card Used.
Bit 4 ~ Bit 0. Reference Raw Card Bit 6, Bit 5. Reference Raw Card Revision Bit 7. Reserved -
62
Address Mapping from Edge Connector to DRAM.
63
Bit 0. Rank 1 Mapping (Registered DIMM - Reserved) Bit 7 ~ Bit 1. Reserved -
64-112
Module-Specific Section
UNUSED
0x00
113
Module-Specific Section.
UNUSED
0x00
114-116
Module-Specific Section
UNUSED
0x00
117
Module Manufacturer ID Code, Least Significant Byte
0x01
118
Module Manufacturer ID Code, Most Significant Byte
0x91
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 10
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
119
Module Manufacturing Location
0x00
120
Module Manufacturing Date
0x00
121
Module Manufacturing Date
0x00
122
Module Serial Number
#
0x23
123
Module Serial Number
#
0x23
124
Module Serial Number
#
0x23
125
Module Serial Number
#
0x23
126
Cyclical Redundancy Code (CRC).
CRC
0x53
127
Cyclical Redundancy Code (CRC).
CRC
0x6A
128-131
Module Part Number
132
Module Part Number
D
0x44
133
Module Part Number
A
0x41
134
Module Part Number
T
0x54
135
Module Part Number
A
0x41
136
Module Part Number
R
0x52
137
Module Part Number
A
0x41
138
Module Part Number
M
0x4D
139
Module Part Number
140
Module Part Number
6
0x36
141
Module Part Number
4
0x34
142
Module Part Number
3
0x33
143
Module Part Number
1
0x31
144
Module Part Number
4
0x34
145
Module Part Number
0x20
Module Revision Code
0x20
146,147
0x20
0x20
148
DRAM Manufacturer ID Code, Least Significant Byte
UNUSED
0x00
149
DRAM Manufacturer ID Code, Most Significant Byte
UNUSED
0x00
150-175
Manufacturer’s Specific Data
UNUSED
0x00
176-255
Open for customer use
UNUSED
0x00
Bytes: 122-125 change per DIMM.
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 11
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
DATARAM CORPORATION, USA Corporate Headquarters, P.O. Box 7528, Princeton, NJ 08543-7528;
Voice: 609-799-0071, Fax: 609-799-6734; www.dataram.com
All rights reserved.
The information contained in this document has been carefully checked and is believed to be reliable. However,
Dataram assumes no responsibility for inaccuracies.
The information contained in this document does not convey any license under the copyrights, patent rights or
trademarks claimed and owned by Dataram.
No part of this publication may be copied or reproduced in any form or by any means, or transferred to any third party
without prior written consent of Dataram.
Document 06931, Revision A, 3-Oct-11, Dataram Corporation  2011
Page 12