Download User`s Manual for GAIN Program

4.3 Output files......................................................................................................................................... 43
4.3.1 The table for the Output Files. ........................................................................................................ 43
4.3.2 The Drawings for the Output Files. ................................................................................................ 45
4.4 Running the Software for Gain and Laser Characteristics................................................................ 48
Reference:.................................................................................................................................................... 56
Appendix A Material Parameters ............................................................................................................. 57
1
AlGaAs/AlGaAs (Substrate: GaAs) ................................................................................................ 58
2
InGaAsP/InGaAsP (Substrate: InP)............................................................................................... 59
3
InGaAs/InGaAsP/InP (Substrate: InP) .......................................................................................... 60
4
InGaAlAs/InGaAlAs (Substrate: InP)............................................................................................. 61
5
GaInP/(AlGa)0.5In0.5P/AlInP (Substrate: GaAs) ......................................................................... 61
6
InGaAs/AlGaAs/AlGaAs (Substrate: GaAs) ................................................................................... 62
8
AlyInxGa1-x-yAs/AlzGa1-zAs/GaAs (Substrate: GaAs)................................................................. 63
9 InzGa1-zAs/AlxGayIn1-x-yAs/AlxGayIn1-x-yAs(Substrate: InP) ....................................................... 64
10 InGaAlAs/InGaAlAs/AlAsxSb1-x (Substrate: InP).............................................................................. 65
11 Ga1-zAs/AlxGayIn1-x-yAs/AlAsxSb1-x (Substrate: InP) ................................................................... 66
12 In(y)Ga(1-y)As(x)N(1-x)/GaAs (dilute N) (Substrate GaAs)............................................................... 67
13 In(1-x)Ga(x)As(y)P(1-y)/GaAs (Substrate GaAs) .............................................................................. 67
Appendix B Complex Structure Examples............................................................................................... 69
B.1 A 1.55 m InGaAlAs/InP compressive strained Single-Quantum-Well laser with GRIN structure... 69
B.2. 1.55 m InGaAlAs/InGaAlAs compressive strained Multiple-Quantum-Well lasers ( 3 quantum wells
) with GRIN structure. ............................................................................................................................. 77