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21
Chapter 3. Media
µL
Sentaurus [10]
Minimos [16]
Reggiani [14]
[10−6
electrons
cm2 V−1 ns−1 ]
1.417
1.43
1.32
β
µL
−2.5
−2.0
−2.0
[10−6
cm2
holes
V−1 ns−1 ]
0.4705
0.46
0.46
β
−2.5
−2.18
−2.2
Table 3.3. Lattice mobility parameter values.
mobility µ0 at low electric fields, the following options are available:
• Using
void SetLowFieldMobility(const double mue, const double mh);
mue electron mobility (in cm2 /(V ns))
muh hole mobility (in cm2 /(V ns))
the values of low-field electron and hole mobilities can be specified explicitly by the user.
• The following functions select the model to be used for the mobility due to phonon scattering:
void SetLatticeMobilityModelMinimos();
void SetLatticeMobilityModelSentaurus();
void SetLatticeMobilityModelReggiani();
In all cases, the dependence of the lattice mobility µL on the temperature T is described by
µL (T ) = µL (T0 )
T
T0
β
,
T0 = 300 K.
The values of the parameters µL (T0 ) and β used in the different models are shown in
Table 3.3. By default, the “Sentaurus” model is activated.
• The parameterization to be used for modelling the impact of doping on the mobility is specified
using
void SetDopingMobilityModelMinimos();
void SetDopingMobilityModelMasetti();
The first function activates the model used in Minimos 6.1 (see Ref. [16]). Using the second
function the model described in Ref. [13] is activated (default setting).
For modelling the velocity as function of the electric field, the following options are available:
• The method for calculating the high-field saturation velocities can be set using
void
void
void
void
SetSaturationVelocity(const double vsate, const double vsath);
SetSaturationVelocityModelMinimos();
SetSaturationVelocityModelCanali();
SetSaturationVelocityModelReggiani();