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DIFFUSE ATHENA User’s Manual C.IMPURITIES specifies concentration of the impurities in the ambient gas. (see Section 6.2.10: “Standard Impurities” for the list of impurity names that can be used, e.g. I.BORON). Units are atoms/cm3. You can define multiple impurity parameters for ambients with multiple impurities. You can only use boron, phosphorus and arsenic if you specify the advanced diffusion model (PLS) in the METHOD statement. Parameters Related to File Output DUMP and DUMP.PREFIX specify that a structure file be output at every DUMPth time step. The files are readable with the STRUCTURE statement or can be displayed using TONYPLOT. The names will be of the form DUMP.PREFIX<time>.str, where <time> is the current total time of the simulation in minutes. TSAVE and TSAVE.MULT specify that intermediate structure files be output when the advanced PLS diffusion model is used. The structure files named DUMP.PREFIX<time>.str will be output at time = TSAVE * TSAVE.MULTk, k=0,1,2,... where time is in seconds. The default value for the parameter DUMP.PREFIX is “at”. The parameter TSAVE.MULT should be greater than 1.0. Parameters Related to the Model Files for Advanced Diffusion Models B.MOD, P.MOD, AS.MOD, IC.MOD, and VI.MOD specify direct paths to boron.mod, phosphorus.mod, arsenic.mod, i.mod, and defect.mod files correspondingly. By default, these files are in $SILVACO/lib/athena/<version_number>/common/pls directory. You can modify your own *.mod files inside directories specified by these parameters. Miscellaneous Parameters NO.DIFF specifies that impurity diffusion be neglected during the calculation. This can be used to observe oxidation or silicidation geometry without unnecessary timesteps related to impurity diffusion REFLOW specifies that a surface tension based reflow of the material is to be performed during the diffusion step. Predeposition Example The following statement specifies a 1000°, 30 minute boron pre-deposition. DIFFUSE TIME=30 TEMP=1000 C.BORON=1.0E20 Oxidation Example The following statement instructs the simulator to grow oxide for 30 minutes in a dry oxygen ambient. DIFFUSE TIME=30 TEMP=1000 DRYO2 Gas Flow Example The following command performs diffusion with a mixed ambient with relative components of oxygen, hydrogen, and HC1 of 10, 10, and 0.1 respectively. DIFFUSE TIME=10 TEMP=1000 F.02=10 F.H2=10 F.HCl=.1 Hydrogen and Oxygen are combined in a ratio 2:1 to form the ambient WETO2. Any excess hydrogen is considered inert. Any excess oxygen is considered as the ambient DRYO2. Since the total pressure of the gas flow is defined (or defaults to one atmosphere) the partial pressure of WETO2 will be reduced if any excess hydrogen or oxygen is present. File Output Example The following commands perform diffusion in dry oxygen ambient for 30 minutes at 1000 oC. After every second timestep a structure file is written with a name prefix TEST. Following the diffusion, the TONYPLOT statement plots each timestep output file in a manner suitable for creating a diffusion movie. 6-26 SILVACO International