Download Sanyo EP124 User's Manual

Discrete Devices
2008-6
SANYO Discrete Devices
SANYO's environmentally-considered discrete "ECoP"
contributes to the realization of comfortable life in
Contents
various aspects.
Invisible
Ultra-small
Thin-form
Light-weight
■ Devices for Mobile Equipment
p2
■ Devices for SW Power Supply
p14
■ Devices for Lighting
p28
■ Devices for Modem
p31
■ Devices for Infrared Sensor
p31
■ Devices for Satellite/GPS
p32
■ FM Transmitter
p33
Friendly
High-efficient
Energy-saving
Smart
Multi-function
High-performance
High-integration
We provide discrete solutions based on "LIGHT, FAST, EFFICIENT & FRIENDLY"
concept to contribute to the creation of "Symbiosis Next-generation Electronic Devices"
aiming at the realization of better life.
Devices for Mobile Equipment
■ Application Block
■ Charger
[GSM]
Charger
DC-DC Converter / Load SW
P3
Down Converter (Low end)
AC Adapter
P6
CPU
AC adapter
System
Control IC
Down Converter (High end)
Li-ion Battery
P5
Input
5V to 6V/0.5A to 1A
IrDA
MIC
P11
M
P12
USB IF
Q2
Li-ion
battery
MOSFETs (Pch) + Schottky Barrier Diodes (or MOSFETs (Pch))
Type No.
P11
Package
CPH5
Card IF
Q1+D1
VEC2822
VEC8
Flash
CCD etc.
LCD
❈: Development
Absolute maximum ratings/Ta=25˚C
CPH5802
Up Converter (High end)
Q1
D1
Power
management IC
Battery
Up Converter (Low end)
Q1
P10
VEC2818
Q1+Q2
VEC2303
VEC2301
ECH8654
ECH8611
❈ ECH8652
VEC8
ECH8
2 in 1
VDSS/
VR
[V]
VGSS
[V]
ID/
IO
[A]
PD
[W]
20
15
20
15
20
30
12
20
20
12
12
±10
±10
±10
±8
±10
±10
±9
±10
2
1
3.5
2
3.5
2
4
3
5
5
6
0.9
1
1
0.9
0.9
1.3
1.3
1.3
Pch MOS
SBD
Pch MOS
SBD
Pch MOS
SBD
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Electrical characteristics/Ta=25˚C
VF [V]
RDS(on) [Ω]
VGS=2.5V
typ
max
IF
[A]
0.140
0.077
0.077
0.054
0.087
0.041
0.045
0.031
0.200
0.108
0.108
0.075
0.120
0.058
0.065
0.045
1
2
2
-
typ
max
0.35
0.5
0.45
-
0.4
0.56
0.5
-
[CDMA]
LCD-Backlight
P9
Q1
AC adapter
Q2
Input
5V to 6V/0.5A to 1A
Power
management IC
Li-ion
battery
Transistors (PNP) + MOSFETs (Pch)
❈: Development
Absolute maximum ratings/Ta=25˚C
Type No.
Package
VEC2904
Q1+Q2
VEC8
VEC2905
CPH6122
Q1
❈ MCH6122
❈ VEC1106
Q2
2
MCH6320
MCH6321
MCH6336
MCH6337
ECH8304
ECH8301
EMH1303
CPH6
MCPH6
VEC8
MCPH6
ECH8
EMH8
2 in 1
PNP TR
Pch MOS
PNP TR
Pch MOS
PNP TR
PNP TR
PNP TR
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Electrical characteristics/Ta=25˚C
VCE(sat) [V]
RDS(on) [Ω]
VGS=2.5V
VCEO/
VDSS
[V]
IC/
ID
[A]
PC
PD
[W]
IC
[A]
IB
[mA]
typ
max
typ
max
30
12
30
20
30
30
30
12
20
12
20
12
20
12
3
4
3
3
3
3
5
5
4
5
4.5
9.5
8
7
1.1
1.1
1.1
1.1
1.3
1.0
1.4
1.5
1.5
1.5
1.5
1.6
1.6
1.5
1.5
1.5
1.5
1.5
1.5
-
75
75
75
75
75
-
0.11
0.11
0.120
0.120
0.105
-
0.16
0.16
0.180
0.180
0.155
-
0.054
0.087
0.047
0.072
0.047
0.053
0.018
0.026
0.027
0.074
0.120
0.066
0.098
0.066
0.075
0.026
0.037
0.036
3
Devices for Mobile Equipment
■ Li-ion Battery
[CDMA]
P+
TR1
B+
USB bus power
CELL
SBD1
AC adapter
External connection
terminal
Control IC
B-
TR2
Main unit circuit
(load)
Charging terminal
Input
5V to 6V/0.6A to 1A
MOSFET1
Power
management IC
SBD2
PLi-ion
battery
Battery Protection
Recommended Bipolar Transistors (PNP)
VCEO
[V]
-12
-15
-30
IC
[A]
MCPH3
2.5
3.0
6.0
2.0
3.0
5.0
❈: Development
MCPH6
CPH3
MCH3143
MCH3106
MCH3144
MCH3109
CPH6
CPH6121
❈ VEC1104
CPH6122
30
0.5
TSSOP8
SOP8
20
EMH2405
EMH2407
FTD2011A
FTD2017R
FW231A
FW232A
30
EMH2402
ECH8601R
ECH8649
ECH8651R
ECH8622R
VDSS
[V]
30
ECSP1608-4
SS0503EC
SB0503EC
SS0203EJ
SB0203EJ
SS0503EJ
SB0503EJ
SS1003EJ
SB1003EJ
1.0
ECH8
FTD2019A
Recommended MOSFETs for Machine Tools
ECSP1008-2
0.2
EMH8
❈ VEC1106
[Features]
• Package size: 1.6×0.8mm and IO=1A, Minimum in industry size !
• Thickness of Package: Typ. 0.60mm
IO
[A]
VDSS
[V]
VEC2102
Recommended Schottky Barrier Diodes (Single)
VR
[V]
VEC8(2 in 1)
❈ VEC1105
CPH3143
CPH3121
CPH3107
CPH3144
CPH3122
CPH3110
❈ MCH6122
VEC8
Recommended MOSFETs (Nch)
45
60
75
80
100
Polarity
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
SMP
2SK4066
2SK4065
ZP
Drive
2SK4163
TM1829Z
2SK4164
TM1831Z
2SK4044
2SJ683
2SK4165
2SJ686
2SK4045
2SJ684
Recommended Schottky Barrier Diodes (2 in 1: Parallel type)
[Features]
• Package size: 2.8×2.9mm and 30V/3A [SBS813/SBE813]
• Package size: 2.0×2.1mm and 30V/2A [SBS818], 15V/2A [SBS817]
• Thickness of Package: Typ. 0.75mm
VR
[V]
IO
[A]
MCPH5
1.0
SBS808M
SBE808
15
30
2.0
EMH8
CPH5
VEC8
SBS804
SBS817
2.0
0.5
1.0
❈: Development
❈ SBE817
SBS806M
SBE805
SBE807
❈ SBS810
SBS818
❈ SBE818
3.0
4
SBS814
SBS811
SBE811
SBS813
SBE813
5
1.8V Drive
4.0V Drive
Devices for Mobile Equipment
■ DC-DC Converter/Load SW
[Bipolar Transistor Use Example]
(1) DC-DC Converter
Recommended MOSFETs
Back Converter
(Step Down)
Package
SCH6
MCPH5
CPH5
VEC8
Synchronous Back Converter
(Pch + Nch or Nch + Nch)
SCH2809
SCH2810
SCH2811
MCH5815
MCH5818
MCH5802
MCH5805
CPH5812
CPH5815
CPH5818
CPH5802
CPH5835
CPH5822
VEC2811
VEC2817
Package
SCH6
MCPH3/5
CPH3/5
Boost Converter
(Step Up)
Type No.
Type No.
SCH1305
SCH1406
SCH2806
SCH2816
MCH3317
MCH3456
MCH5811
MCH5819
CPH3321
CPH3313
CPH3337
CPH5809
CPH5819
CPH5805
Package
SCH6
MCPH5
CPH5
VEC8
Type No.
SCH2817
SCH2806
SCH2819
SCH2808
MCH5826
MCH5811
MCH5809
MCh5819
CPH5803
CPH5811
CPH5831
CPH5809
CPH5819
CPH5805
VEC2813
VEC2816
VDSS
[V]
-12
-30
-12
-30
-60
-12
-20
-30
-30
-12
RDS(on)
max [mΩ]
VGS=4V
(*: VGS=4.5V)
290*
530
830
290*
530
1090
2300
290*
290*
490*
145
235
290
168
62*
VDSS
[V]
RDS(on)
max [mΩ]
VGS=4V
(*: VGS=4.5V)
-12
310*
20
-12
15
20
30
-12
-20
-30
30
30
30
VDSS
[V]
15
20
30
15
20
30
20
30
20
30
210
440
290*
160
210
520
98*
235
77
90
520
150
RDS(on)
max [mΩ]
VGS=4V
160
210
215
560
160
210
215
520
210
63
63
90
520
150
66
99
Step up chopper
Drive
[V]
1.8
2.5
4.0
1.8
4.0
1.8
4.0
1.8
2.5
4.0
4.0
2.5
Drive
[V]
1.8
4.0
1.8
4.0
1.8
2.5
4.0
2.5
4.0
VOUT
VIN
VOUT
15V/0.5A
15V/0.5A
30V/0.5A
50V/0.1A
15V/2A
15V/0.5A
Bipolar Transistors + Schottky Barrier Diodes
Absolute maximum ratings/Ta=25˚C
TR
Type No.
Package
15V/1A
30V/0.5A
30V/2A
15V/3A
30
CPH5705
30
3
CPH5702
30
CPH5703
50
Electrical characteristics/Ta=25˚C
SBD
VCEO IC
[V]
[A]
CPH5706
TR
PC VRRM IO
V
[W]
[V]
[A] CE
[V]
1.5 0.9
hFE
IC
[A]
VCE (sat) [V]
min max
Internal
Electrical
chip
VF [V]
IR [μA] trr [ns]
equivalent connection
IF
IF
VR
max
max
max product
[A]
[V]
[A]
SBD
IC
[A]
IB
[mA]
typ
max
0.25 0.375 0.7 0.55 10 200 0.1 10
CPH3115
+SBS006
B18
0.5 200 560 1.5
30 0.155 0.23 0.5 0.35 6 500 0.1 15
CPH3109
+SBS004
B18
2
0.5 200 560 1.5
30
0.12
0.18 0.7 0.55 15 80 0.1 10
CPH3209
+SB07-03C
B22
2
0.1 200 560
50
0.08
0.12 0.5 0.55 25 50 0.1 10
CPH3205
+SB05-05CP
B22
30
0.7
2
0.1 200 560 0.75 15
0.9
15
1
2
3
0.9
30
0.7
3
0.9
50
0.5
CPH5
SBD
1
15V/0.5A
Bipolar Transistors (PNP)
Absolute maximum ratings/Ta=25˚C
15V/1A
30V/0.5A
-
30V/0.5A
Type No.
Package
MCH3144
MCH3109
MCH3145
MCH3105
Electrical characteristics/Ta=25˚C
hFE
VCEO
[V]
IC
[A]
PC
[W]
min
30
30
50
50
2
3
2
3
0.8 *1
0.8 *1
0.8 *1
0.8 *1
200
200
200
200
MCPH3
VCE (sat) [V]
max
IC
[A]
IB
[mA]
typ
max
560
560
560
560
1.5
1.5
1
1
75
30
50
50
0.17
0.155
0.165
0.1
0.26
0.23
0.33
0.2
Complementary
product
MCH3244
MCH3209
MCH3245
MCH3205
*1: When mounted on ceramic substrate (600mm2×0.8mm)
Bipolar Transistors (NPN)
Drive
[V]
Type No.
1.8
15V/0.5A
2.5
4.0
30V/0.5A
1.8
15V/0.5A
15V/1A
2.5
4.0
30V/0.5A
1.8
Absolute maximum ratings/Ta=25˚C
SBD
IC
[A]
PC
[W]
min
30
30
50
50
2
3
2
3
0.8 *1
0.8 *1
0.8 *1
0.8 *1
200
250
200
250
B18
Co
B22
Ca
Co
A
B
Ca
30V/0.5A
30V/2A
E
E
VCE (sat) [V]
max
IC
[A]
IB
[mA]
typ
max
560
400
560
400
1.5
1.5
1
1
75
30
50
50
0.16
0.08
0.13
0.06
0.24
0.12
0.26
0.09
*2: MBIT III series (New Product)
15V/1A
2.5
1.8
4.0
MCPH3
Electrical characteristics/Ta=25˚C
hFE
VCEO
[V]
*1: When mounted on ceramic substrate (600mm2×0.8mm)
15V/2A
4.0
Package
MCH3244
MCH3221 *2
MCH3245
MCH3222 *2
B
6
Step down chopper
VIN
SBD
A
7
Complementary
product
MCH3144
MCH3145
-
Devices for Mobile Equipment
■ LCD-Backlight
[Power MOSFET Use Example]
(2) Load SW
Recommended MOSFETs
Push-Pull
-
EMH2603
30V
MCH6614
CPH6615
VEC2612
EMH2602
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
● MCH6627
● MCH6644
● MCH6628
MCH6613
MCPH6
MCH6614
MCH6615
MCH6634
● CPH6614
● CPH6615
CPH6
CPH6605
CPH6610
● VEC2602
VEC8
● VEC2612
● EMH2602
EMH8
● EMH2603
SCH2602
SCH6
M07
P2
N1
N2
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
30
30
30
30
20
30
30
30
30
30
30
30
30
30
30
30
30
30
20
30
30
30
30
30
30
30
30
30
20
30
12
30
20
20
20
20
10
10
10
10
10
10
10
10
10
10
20
20
20
20
10
10
9
20
20
20
20
20
20
20
10
10
10
10
1
1.4
1.2
1.8
1
0.35
0.2
0.35
0.4
0.35
0.4
0.65
0.4
0.7
1.2
1.8
1.8
2.5
1.5
0.65
0.4
1.4
3
4
3
3
2
3.5
2
0.15
1.5
0.35
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.9
0.9
0.8
0.8
0.8
0.8
0.9
0.9
0.9
0.9
1
1
1.1
0.6
0.6
0.6
M11
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
VGS=10V
typ
max
0.42
0.23
0.32
0.16
0.38
2.9
8
2.9
2.4
2.9
2.4
0.9
1.5
0.7
0.32
0.15
0.18
0.079
0.18
0.9
1.4
0.245
0.065
0.037
0.073
0.065
0.053
0.115
0.165
3.7
-
0.55
0.3
0.42
0.21
0.5
3.7
10.4
3.7
3.1
3.7
3.1
1.2
1.9
0.9
0.42
0.195
0.235
0.105
0.235
1.2
1.8
0.32
0.086
0.048
0.095
0.086
0.069
0.15
0.235
5.2
-
M12
VGS=4(4.5)V
typ
max
0.72
0.4
0.59
0.3
0.54
3.7
11
3.7
3.5
3.7
3.5
1.2
2
0.8
0.59
0.29
0.32
0.15
0.24
1.2
2
0.415
0.117
0.07
0.115
0.117
0.105
0.215
0.26
6.4
0.235
2.9
M13
1
0.56
0.83
0.42
0.76
5.2
15.4
5.2
4.9
5.2
4.9
1.7
2.8
1.15
0.83
0.41
0.45
0.21
0.34
1.7
2.8
0.58
0.168
0.099
0.161
0.168
0.15
0.31
0.52
12.8
0.31
3.7
Ciss
[pF]
Qg
[nC]
75
65
104
95
115
7
7.5
7
28
7
28
30
40
30
104
95
226
187
40
30
40
65
510
370
180
510
280
285
420
7
160
7
2.6
2.5
3.3
3.2
1.5
1.58
1.43
1.58
2
1.58
2
2.34
0.83
1
3.3
3.2
5.5
5.2
3.2
2.34
0.83
2.5
11
8.5
4.9
11
6.4
6.7
5
2
2.6
1.58
M26
M11
M11
M11
M11
M11
S
D
D1
G2
S2
D
S
D
D1
D1
D2
D2
D1
D1
G1/D2
D2
G
S
G
S1
G1
D2
G
S
G
S1
G1
S2
G2
S1
G2
S2
G2
Power MOSFETs
Type No.
Package
Polarity
VDSS
[V]
RDS (on) max [mΩ]
(VGS=4V)
VEC2402
ECH8606
ECH8402
VEC8
Nch+Nch
Nch+Nch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Nch
Pch
30
30
30
30
30
30
30
30
30
30
30
99
75
32
168
99
168
161
120
75
32
48
ECH8
VEC2602
VEC8
VEC2612
ECH8609
ECH8402
ECH8302
ECH8
M11
Set size
[inch]
Use example
Push-Pull
5 to 12
Small Screen
2.5 to 8
Half-Bridge
Full-Bridge
M12
[Bipolar Transistor Use Example]
Self-Excitation Type
VIN
M12
Q1
M07
M07
Q2
M13
M13
M13
M30
M26
Bipolar Transistors
Type No.
Package
Polarity
VCES
(*VCBO)
[V]
IC
[A]
VIN
[V]
Set size
[inch]
Use example
CPH5503
CPH5504
CPH5
NPN+NPN
NPN+NPN
40*
80
3
3
5 to 12
Small Screen
2.5 to 8
Self-Excitation Type
D1
S
VIN
[V]
M11
M30
D
8
Electrical
connection
CCFL
Polarity
N1
P1
●: New products
Absolute maximum ratings/Ta=25˚C
Package
P1
N2
Power MOSFETs (Pch + Nch)
Type No.
N1
Controller
CPH6605
CCFL
MCH6628
CCFL
20V
Controller
Application Sample: Pch + Nch
CCFL
EMH8
CCFL
VEC8
Controller
CPH6
Full-Bridge
CCFL
CCFL
MCPH6
Controller
VDSS
Half-Bridge
G1
9
Devices for Mobile Equipment
■ Flash Unit
■ Condenser Microphone
[Use Example]
[High-Frequency Devices Use Example]
Battery
FRD
Trans
300V
The electric capacity changes
Sound
Xe-tube
Mobile phone
Hands-free
Digital camera
Digital video camera
Portable games
other
diaphragm
Back plate
Trigger
transformer
CM
IGBT
DRIVER
IGBT
G
S
Control IC
S/W element
VCC
D
Impedance transformation
VOUT
Electric signal output
High-Frequency Devices for Condenser Microphone
Absolute maximum ratings/Ta=25˚C
Bipolar Transistors (NPN)
Absolute maximum ratings/Ta=25˚C
Type No.
Package
CPH3223
CPH3236
CPH
Polarity
hFE
VCEO
[V]
IC
[A]
PC
[W]
min
50
50
3
3
0.9
0.9
200
250
NPN
NPN
Type No.
Electrical characteristics/Ta=25˚C
VCE (sat) [V]
max
IC
[A]
IB
[mA]
typ
max
560
400
1
1
50
50
0.09
0.06
0.13
0.1
MOSFETs (Nch)
●: New products
Absolute maximum ratings/Ta=25˚C
Type No.
● MCH6422
MCH6424
● MCH6423
Package
MCPH6
Polarity
VDSS
[V]
Nch
Nch
Nch
60
60
60
VGSS
[V]
ID
[A]
10
10
20
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
PD
[W]
2
3
2
VGS=10V
typ
max
1.5
1.5
1.5
0.17
VGS=4V
typ
max
0.22
0.17
0.085
0.21
Ciss
[pF]
VGS=2.5V
0.22
0.115
0.3
typ
max
0.19
0.095
-
0.27
0.135
-
TR
325
690
220
4.2
8.2
6.4
Type No.
VEC2901
Package
VEC8
VCEO
[V]
IC
[A]
PC
[W]
50
5
1.1
VDSS VGSS
[V]
[V]
30
10
TR
hFE
MOSFET
VCE (sat) [V]
RDS (on) [Ω]
VGS=4V
VGS=2.5V
Cob
typ
max
[pF]
IC
[A]
IB
[mA]
typ
max
typ
0.15 0.25 250 400 26
1.6
53 0.055 0.11 2.9
3.7
3.7
ID
[A]
PD
[W]
min
typ
max
USFP
TSSFP
VTFP
TND721MH5
max
Ciss
typ
[pF]
Qg
typ
[nC]
5.2
7
1.58
30
30
100
100
100
100
100
min
max
0.14
0.14
0.14
0.14
0.14
0.14
0.14
0.35
0.35
0.35
0.35
0.35
0.35
0.35
1.0
1.4
1.0
1.4
1.0
1.4
1.4
Absolute maximum ratings/Ta=25˚C
Type No.
EC4K11KF
EC4K14MF
ECSP1410 (1.4×1.0×0.4)
ECSP1410 (1.4×1.0×0.32)
VIN
[V]
VDD
[V]
PD
[mW]
±0.5
±0.5
4
4
100
100
MCPH5
Package
TSSOP8
Ciss
typ
[pF]
Crss
typ
[pF]
GV
typ
[dB]
VNO
max
[dB]
3.5
3.1
3.5
5.0
3.5
5.0
3.1
0.65
0.95
0.65
1.1
0.65
1.1
0.95
-3.0
1.0
-3.0
-2.0
-3.0
-2.0
1.0
-110
-102
-110
-102
-110
-102
-102
GV
[dB]
VNO
[dB]
12
12
-90
-90
Electrical characteristics/Ta=25˚C
min
max
Ci
typ
[pF]
2
2
3.6
3.6
2.7
2.7
VDD [V]
IDD [μA]
min
max
140
140
100
200
[Use Example]
Vbus
Shorted for use
USB
Controller
IO+/IO-typ [mA]
VDD
[V]
VIN / VOUT
[V]
PD
[W]
VIH
min
[V]
VIL
max
[V]
CL [pF]
-0.3 to 7.5
-0.3 to VDD+0.3
0.8
2
1
5000
Package
VDD=5V
VDD=2.5V
CL [pF]
50
5000
10
●: New products
Absolute maximum ratings/Ta=25˚C
● TIG030TS
● TIG032TS
1
1
1
1
1
1
1
|yfs|
typ(*min)
[mS]
D–
D+
Flash Circuit IGBTs
Type No.
20
20
20
20
20
20
20
Package
(unit: mm)
IGBT Drivers
Type No.
PD
[mW]
Electrical characteristics/Ta=25˚C
IDSS
[mA]
■ USB (3.3V) Signal Line Protection Devices
Electrical characteristics/Ta=25˚C
MOSFET
TF246
TF252
TF202C
TF222B
TF218THC
TF208TH
TF252TH
ID
[mA]
Qg
[nC]
Bipolar Transistors (NPN) + MOSFETs (Nch)
Absolute maximum ratings/Ta=25˚C
Package
VGDS
VGDO
[V]
Polarity
Nch
Nch
VCES
[V]
400
400
VGES
(DC)
[V]
ICP
[A]
±6
±6
150
180
Electrical characteristics/Ta=25˚C
VGE(off) [V]
VCE
[V]
IC
[mA]
min
10
10
1
1
0.5
0.4
VCE (sat) [V]
max
1.2
1
IC
[A]
VGE
[V]
min
150
150
4
2.5
3.7
3.4
Recommended Device
Cies
max
5.4
4.8
VCE
[V]
f
[MHz]
typ
[pF]
10
10
1
1
2610
5100
Noise clamping of USB eye patterns
VR [V]
Type No.
Package
VS002E4 ECSP1608-4
IR=1μA
min
IR=1mA
max
3.4
4.0
VF [V]
IF=1mA
IL [μA]
VR=2.5V
CT [pF]
f=1MHz/
VR=0V
typ
0.35
1
16
Abnormal signals of 4.0V or more
eliminated (overshoot eliminated)
+D
FRD
Type No.
Package
VR
[V]
IO
[mA]
VF
IF=0.1A
[V]
IR
VR=400V
[μA]
trr max
IF=IR=100mA, See specified test circuit
[ns]
RE0208DA
SOD-323
800
200
4.0
3
55
10
–D
Abnormal signals of 0.35V or more
eliminated (undershoot eliminated)
11
Devices for Mobile Equipment
■ Devices for Motor
[MOSFETs Use Example]
Devices for Fan Motor
Single-phase Motor (H-Bridge, Half pre.): #5
Single-phase Motor (H-Bridge): #6
Q1
M
Q2
Q5
Q3
M
Q1
Q3
Q1
LB11660V
Motor Driver
[Bipolar Transistor Use Example]
Three-phase Motor: #7
Q2
Q2
Q4
Q6
M
• For the purpose of power consumption reduction,
low saturated voltage transistor is recommended.
• PCP and TP packages with good radiation are
recommended.
• Composite type (B-E bias resistor, and C-E diode
are embedded) is recommended for miniaturization
purpose.
Q4
VCC
VIN
H
Hall element GND
GND
MOSFETs
Absolute maximum ratings/Ta=25˚C
Type No.
MCH3410
MCH3421
MCH6423
CPH3418
CPH3424
CPH3427
VEC2402
CPH6616
Package
MCPH3
MCPH6
CPH3
VEC8
CPH6
Polarity
Nch
Nch
Nch
Nch
Nch
Nch
Nch+Nch
Nch+Nch
VDSS
[V]
30
100
60
30
60
100
30
30
VGSS
[V]
20
20
20
20
20
20
20
20
ID
[A]
2
0.8
2
1.4
1.8
1
4
2.5
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
PD
[W]
0.9
0.9
1.5
0.9
1
1
0.9
0.9
VGS=10(15)V
typ
max
0.115
0.68
0.17
0.23
0.17
0.48
0.037
0.079
0.15
0.89
0.22
0.3
0.22
0.63
0.048
0.105
Ciss
[pF]
VGS=4(4.5)V
typ
max
0.19
0.85
0.21
0.4
0.21
0.58
0.07
0.15
0.27
1.2
0.3
0.56
0.3
0.81
0.099
0.21
120
165
220
65
220
240
370
187
Qg
[nC]
3.6
4.8
6.4
2.5
6.4
6.5
8.5
5.2
Use
example
#5
Type No.
Package
VEC2602
VEC8
ECH8609
ECH8
FW340
FW377
FW356
SOP8
FW359
FW360
Polarity
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
30
30
30
30
30
30
35
35
60
60
60
60
100
100
20
20
20
20
20
20
20
20
20
20
20
20
20
20
3
4
4
6
5
5
5
6
3.5
5
3
3
2
2
0.9
0.9
1.3
1.3
1.8
1.8
1.8
1.8
2
2
1.8
1.8
1.4
1.4
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
VGS=10V
typ
max
0.065
0.037
0.05
0.025
0.041
0.037
0.037
0.025
0.11
0.043
0.11
0.11
0.24
0.175
0.086
0.048
0.067
0.034
0.053
0.048
0.049
0.033
0.145
0.058
0.145
0.145
0.315
0.22
Ciss
[pF]
Qg
[nC]
510
370
550
510
1000
460
1224
1050
990
790
990
300
935
530
11
8.5
2.2
11
16.5
8.6
24
20
22
16
22
7.8
20
13
VGS=4(4.5)V
typ
max
0.117
0.07
0.087
0.052
0.07
0.064
0.062
0.043
0.15
0.056
0.145
0.15
0.32
0.22
0.168
0.099
0.12
0.075
0.098
0.09
0.087
0.061
0.21
0.084
0.205
0.215
0.45
0.31
Use
example
#6
#6, #7
#7
#6
#6, #7
●: New products
Absolute maximum ratings/Ta=25˚C
Type No.
MOSFETs (Pch+Nch)
Absolute maximum ratings/Ta=25˚C
Bipolar Transistors
● 2SA2124
2SA2012
● 2SA2125
2SA2013
2SA1416
2SA1417
● 2SA2126
2SA2039
2SA2040
● 2SA2169
2SA1592
2SA1593
2SA1552
● 2SC6044
2SC5565
● 2SC5964
2SC5566
2SC3646
2SC3647
2SC5706
2SC5707
● 2SC6017
2SC4134
2SC4135
2SC4027
*1: Tc=25˚C
Package
PCP
TP
PNP
TP
Polarity
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
VCEO
[V]
30
30
50
50
100
100
50
50
50
50
100
100
160
30
30
50
50
100
100
50
50
50
100
100
160
IC
[A]
Electrical characteristics/Ta=25˚C
hFE
PC
[W]
2
2
5
3
4
1
2
3
5
8
10
1
2
1.5
2
5
3
4
1
2
5
8
10
1
2
1.5
1.3 *
1.3 *3
1.3 *3
1.3 *3
1.3 *3
1.5 *3
15 *1
15 *1
15 *1
20 *1
10 *1
15 *1
1
1.3 *2
1.3 *3
1.3 *3
1.3 *3
1.3 *3
1.5 *3
15 *1
15 *1
20 *1
10 *1
15 *1
1
*2: When mounted on ceramic substrate (450mm2×0.8mm)
VCE (sat) [V]
min
max
IC
[A]
200
200
200
200
100
100
200
200
200
200
100
100
100
200
200
200
200
100
100
200
200
200
100
100
100
560
560
560
560
400
400
560
560
560
560
400
400
400
560
560
560
560
400
400
560
560
700
400
400
400
1.5
1.5
1
1
0.4
1
1
1
3.5
5
0.4
1
0.5
1.5
1.5
1
1
0.4
1
1
3.5
5
0.4
1
0.5
Complementary
product
IB
[mA]
typ
max
75
30
50
50
40
100
50
50
175
250
40
100
50
75
30
50
50
40
100
50
175
250
40
100
50
0.2
0.14
0.125
0.105
0.2
0.22
0.135
0.115
0.23
0.29
0.2
0.22
0.2
0.17
0.125
0.1
0.085
0.1
0.13
0.09
0.16
0.18
0.1
0.13
0.13
0.4
0.21
0.23
0.18
0.6
0.6
0.27
0.195
0.39
0.58
0.6
0.6
0.5
0.26
0.19
0.15
0.13
0.4
0.4
0.135
0.24
0.36
0.4
0.4
0.45
*3: When mounted on ceramic substrate (250mm2×0.8mm)
Bipolar Transistors: Built-in Damper Diode
MOSFETs
Type No.
2SJ646
2SJ634
2SJ637
2SK4067
2SK3492
2SK3617
●: New products
Absolute maximum ratings/Ta=25˚C
Absolute maximum ratings/Ta=25˚C
Package
TP
TP
Polarity
Pch
Pch
Pch
Nch
Nch
Nch
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
30
60
100
30
60
100
20
20
20
20
20
20
8
8
5
8
8
6
15
20
20
10
15
15
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
VGS=10(15)V
typ
max
0.058
0.105
0.24
0.085
0.115
0.18
0.075
0.138
0.312
0.115
0.15
0.225
VGS=4(4.5)V
typ
max
0.097
0.145
0.32
0.155
0.155
0.225
0.136
0.205
0.45
0.22
0.22
0.315
Type No.
Ciss
[pF]
Qg
[nC]
510
990
935
260
300
530
11
22
20
6
7.8
13
Polarity
Use
example
#6, #7
#7
#6, #7
#7
2SB1397
2SB1325
2SB1324
● 2SB1739
2SD2100
2SD1999
2SD1998
● 2SD2720
*1: Tc=25˚C
12
Package
PNP
TP
PNP
TP
PNP
PNP
PNP
PNP
NPN
NPN
NPN
NPN
Electrical characteristics/Ta=25˚C
hFE
VCEO
[V]
IC
[A]
PC
[W]
20
20
30
30
20
20
30
30
2
4
3
3
2
4
3
3
1.3 *3
1.5 *3
1.5 *3
1.5 *3
1.3 *3
1.5 *3
1.5 *3
1.5 *3
*2: When mounted on ceramic substrate (450mm2×0.8mm)
2SC6044
2SC5565
2SC5964
2SC5566
2SC3646
2SC3647
2SC5706
2SC5707
2SC6017
2SC4134
2SC4135
2SC4027
2SA2124
2SA2012
2SA2125
2SA2013
2SA1416
2SA1417
2SA2039
2SA2040
2SA2169
2SA1592
2SA1593
2SA1552
VCE (sat) [V]
min
IC
[A]
IB
[mA]
typ
max
70
70
70
70
70
70
70
70
1
3
2
2
1
3
2
2
50
150
100
100
50
150
100
100
0.25
0.25
0.25
0.28
0.25
0.25
0.2
0.23
0.5
0.5
0.6
0.6
0.5
0.5
0.5
0.5
*3: When mounted on ceramic substrate (250mm2×0.8mm)
13
VF
IF=0.5A
[V]
RBE
(kΩ)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.6
1.5
0.8
0.8
1.6
1.5
0.8
0.8
Devices for SW Power Supply
■ Switching Power Supply Types & Recommended Power MOSFETs Map
■ Switching Devices
[MOSFET/FRD/SBD Use Example]
Universal AC Input
20
Forward (1 or 2 used)
VDSS: 600 to 800V
ACIN
Drain Current/ID[A]
FRD
Full-bridge (4 used)
VDSS: 450 to 500V
14
SBD
PFC
MOSFET
Flyback
RCC or PWM
VDSS: 600 to 800V
8
PFC
Control
Half-bridge (2 used)
VDSS: 450 to 500V
DC
Output
When output becomes large, a high VDSS
is required for the device
ex) Flyback Circuit
Output 80W → VDSS≥600V
Output 120W → VDSS≥700V
6
SBD
Main SW
MOSFET
Output Power/POUT[W]
30
50
100
150
200
250
300
350
400
450
(1) Power MOSFET/SBD/FRD for Adapter
500
Recommended Devices
■ Application Example
ACIN
Set Spec
(1) Flyback Circuit
SBD
VCC
DC
Output
PFC FRD
Main SW
MOSFET
Main Control
PFC
Main SW
Rectifier
Applications/Power
VOUT
[V]
IOUT
[A]
MOSFET
MOSFET
SBD
Game machine
50W
5
12
2.0 to 4.0
1.0 to 2.0
-
2SK4086LS
(600V/0.58Ω)
SBT80-04J
SBT100-16JS
Notebook PC
65W
20
2.0 to 4.0
-
2SK4087LS
(600V/0.47Ω)
SBT100-16JS
General-purpose
75 to 90W
5
12
24
2.0 to 4.0
2SK4085LS
500V/0.33Ω
2SK4087LS
(600V/0.47Ω)
SBT80-04J
SBT150-10JS
SBT100-16JS
PFC
Control
PFC
MOSFET
(1) Flyback
For low-output use (up to 150W)
few externally-conneted parts required
1 MOSFET is used for switching
(2) Forward
Usable for middle-large ouput (100 to 300W)
Several switching MOSFETs can be used in parallel
Several switching MOSFETs can be used
(3) Half-Bridge
For middle output (<150 to 400W)
MOSFET with a lower voltage than flyback or
Forward voltage can be used
2 switching MOSFETs are used
SBD
(2) Forward Circuit
VCC
Main SW
MOSFET
(2) Power MOSFET/SBD/FRD for other power supply
Recommended Devices [Other sets]
DC
Output
SBD
Main Control
Printer
Main SW
MOSFET
Main SW
MOSFET
(3) Half-Bridge Circuit
SBD/FRD
BL DVD recorder
DVD recorder
Desktop PC
PDP TV
PFC
FRD
MOSFET
MOSFET
SBD
Domestic (Japan)
W/W
Domestic (Japan)
Domestic (Japan)
W/W
W/W
50
50
100
60
>200
>300
❈ RD0506LS
❈ RD1006LS
❈ RD1006LS
2SK4097LS
2SK4085LS
2SK4124
2SK4096LS
2SK4098LS
2SK4087LS
2SK4097LS
2SK4125
2SK4124
SBT150-10JS
SBT150-10JS
SBT100-16JS
SBT80-06J
SBT350-04J
SBT100-16JS
SBD/FRD
(4) Full-Bridge Circuit
DC
Output
14
Rectifier
Power
[W]
SBD
Main SW
MOSFET
Main SW
Specification
DC
Output
VCC
(4) Full-Bridge
For high output (>300 to 400W)
MOSFET with a lower voltage than flyback or
forward voltage can be used
4 switching MOSFETs are used
❈: Development
Set Specification
Set
VCC
Pulse IN
3.0 to 5.0
SBD
15
Devices for SW Power Supply
■ LCD TV
(3) Bipolar Transistors for Adapter
Recommended Devices by LCD-TV Panel Size
[Bipolar Transistor Use Example]
(1) When BL inverter is half-bridge circuit, and AV output is flyback circuit
Output
+5.6 to 5.8V/600 to 700mA
Main
S/W Tr
Starting
resistor
AC Input
Half-Bridge Power Supply
PFC Circuit
ACIN
VCC
PFC FRD(1)
Pulse IN
RBE
PFC
Control
PFC
MOSFET(1)
Thermistor
SBD(2)/FRD(2)
Main SW
MOSFET(2)
DC
Output
Main SW
MOSFET(2)
SBD(2)/FRD(2)
Control IC
Flyback Power Supply
DC
Output
SBD(1)
Bipolar Transistors [VCBO=700V/800V Series (AC Adapter)]
Absolute maximum ratings/Ta=25˚C
Type No.
2SC5823
2SC5808
❈ TT2240NMP
2SC6065-V
2SC6083
2SC6083A
❈ 2SC6146
CPH3249
CPH3249A
Package
TP
TP
NMP
NMP
SPA
SPA
SPA
CPH3
CPH3
VCBO
[V]
VCEO
[V]
IC
[A]
700
700
700
700
700
700
800
700
700
400
400
400
400
350
400
350
350
400
1.5
2.5
1.0
1.5
1.0
1.0
1.0
1.0
1.0
❈: Development
Electrical characteristics/Ta=25˚C
IC
[A]
min
max
IC
[mA]
IB
[mA]
max
Input
Voltage
[V]
0.1
0.3
0.1
0.1
0.1
0.1
0.1
0.1
0.1
20
20
15
20
100
50
100
100
50
50
50
30
50
200
100
200
200
100
700
1200
500
700
500
500
500
500
500
140
240
100
140
100
100
100
100
100
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
100/220
100/220
100/220
100/220
100
100/220
220
100/220
100/220
hFE
VCE (sat) [V]
AC Adapter
Circuits
[W]
3/6
4/8
1.5/3
3/6
1.5
1.5/3
3
1.5/3
1.5/3
Main SW
MOSFET(3)
SBD(1)
Main Control
* For under 21inch, also used for
BL inverter power supply.
◆ Lineup
❈: Development
Set Spec
PFC
SPS for
AV Processor
SPS for
BL Inverter
2nd Rectifier
SBD(1)
SBD(2)/FRD(2)
Panel Size
[inch]
POUT
[W]
VOUT
[V]
FRD(1)
MOSFET(1)
MOSFET(2)
MOSFET(3)
up to 21
70
5/12
-
-
2SK4086LS
(also used for
BL power supply)
-
26 to 32
150
5 to 12
24
❈ RD1006LS
2SK4085LS
2SK4098LS
2SK4096LS×2
37 to 42
250
5 to 12
24
❈ RD0506LS
2SK4124×2
2SK4098LS
2SK4097LS×2
at least 42
350
5 to 12
24/60
❈ RD1006LS
2SK4124×3
2SK4101LS
2SK4084LS×2
SBT80-06J(1)
SBT100-16JS(1)
SBT100-16JS(1)
SBT100-16JS(2)
SBT100-16JS(1)
SBT150-10JS(2)
SBT100-16JS(2)
SBT150-10JS(1)
RD2004LS(2)
[Power supply block]
• Circuit
For under 21inch, used for both AV processor (main power supply) and BL inverter power supply.
For larger than 26inch, 2-power supply system is usually used (one is for BL inverter use, and the other is for AV processor use).
• Secondary-side diode voltage
In case of flyback circuit, diode voltage should be 100V and above for 12V output (when PFC output is 380V).
In case of half-bridge circuit, diode voltage should be 100V and above for 24V output (when PFC output is 380V).
16
17
Devices for SW Power Supply
(2) The example when BL inverter adoptes PFC voltage direct input circuit, and AV output adopts flyback circuit
(3) Devices for BL Inverter
1) Recommended Devices for Bridge Circuit
Push-Pull Type
PFC Circuit
PFC FRD(1)
PFC Direct input BL Inverter
Main SW
MOSFET(3)
FRD(2)
Pulse IN
PFC
Control
Multi CCFL, Parallel
FRD(2)
[Feature]
• Compared with half-bridge type, although doubled voltage is needed, meanwhile RDS(on) can be suppressed due to the use of Nch,
so a good symmetry can be achieved.
Because the current capacity is large, multi tubes driving can be made possible, and the needed parts count can be reduced.
CCFL
Separately-excitation
Package
CCFL
Driver
FRD(2)
VIN
CCFL
FRD(2)
N1
SMP
Controller
PFC
MOSFET(1)
Main SW
MOSFET(3)
Flyback Power Supply for AV Processor
CCFL
ACIN
N2
DC
Output
SBD
TO-220ML
TO-220FI
VEC8
(VECxxxx)
ECH8
(ECH8xxx)
TSSOP8
(FTSxxxx(single))
(FTDxxxx(Dual))
SBD
Main SW
MOSFET(2)
Main Control
N1
◆ Lineup
❈: Development
PFC
Direct BL Inverter
POUT
[W]
VOUT
[V]
FRD(1)
MOSFET(1)
26 to 37
37 to 42
at least 42
200
250
350
12
12 to 18
12 to 18
❈ RD1006LS
❈ RD1006LS
❈ RD1006LS
2SK4085LS
2SK4124×2
2SK4124×3
FRD(2)
MOSFET(3)
❈ RD0506LS 2SK4086LS×2
❈ RD0506LS 2SK4086LS×2
❈ RD1006LS 2SK4085LS×2
2nd Rectifier
MOSFET(2)
SBD
2SK4098LS
2SK4098LS
2SK4101LS
SBT100-16JS
SBT100-16JS×2
SBT100-16JS×2
SOP8
(FSSxxxx(single))
(FWxxxx(Dual))
N2
CCFL
CCFL
Panel Size
[inch]
SPS for AV Processor
Contoller
Set Spec
TP
SMP
18
19
Polarity
Type No.
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
2SK3285 (30V/34mΩ)
2Sk3352 (30V/21mΩ)
2SK3816 (60V/41mΩ)
2SK3818 (60V/18mΩ)
2SK2592 (250V/200mΩ)
2SK3703 (60V/28mΩ)
2SK3704 (60V/15mΩ)
2SK2160 (200V/350mΩ)
2SK2161 (200V/250mΩ)
2SK4096 (500V/710mΩ)
2SK4084 (500V/400mΩ)
Set Size
[inch]
VIN
[V]
up to 12
21 to 32
15 to 24
at least 60
15 to 24
at least 32
at least 60
Nch + Nch VEC2402 (30V/99mΩ)
Nch + Nch ECH8606 (30V/75mΩ)
Nch
ECH8402 (30V/32mΩ)
2.5 to 8
5 to 12
Nch + Nch FTD8009 (30V/33mΩ)
Nch + Nch ECH8616 (60V/133mΩ)
Nch + Nch
Nch + Nch
Nch + Nch
Nch
Nch
Nch + Nch
Nch + Nch
Nch + Nch
Nch
Nch+Nch
Nch
Nch + Nch
Nch + Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
FW241 (30V/150mΩ)
FW261 (30V/83mΩ)
FW803 (30V/27mΩ)
FSS250 (30V/54mΩ)
FSS804 (30V/20mΩ)
FW808 (30V/37mΩ)
FW250 (60V/215mΩ)
FW256 (60V/84mΩ)
FSS273 (45V/34mΩ)
FW248 (45V/42mΩ)
FSS275 (60V/62mΩ)
FW257 (100V/220mΩ)
FW225 (450V/11.2Ω)
SFT1402 (35V/40mΩ)
SFT1403 (35V/25mΩ)
2SK3352 (30V/21mΩ)
SFT1407 (45V/29mΩ)
SFT1405 (45V/74mΩ)
2SK3615 (60V/85mΩ)
2SK3816 (60V/41mΩ)
2SK3818 (60V/18mΩ)
2SK1920 (250V/700mΩ)
2SK3092 (400V/2.3Ω)
2SK3850 (600V/18.5Ω)
15 to 24
5 to 12
15 to 19
15 to 24
at least 120
5 to 12
at least 32
15 to 24
at least 120
Devices for SW Power Supply
Full-bridge Type, Half-bridge Type
Self-excitation Type (collector resonance)
[Feature: Full-bridge/Half-bridge Type]
• Pch/Nch drive
• A large current device can drive multi tubes, thus the needed parts count can be reduced.
[Feature]
• Multi tubes can be driven by using a power device with large current capacity.
→ also, the number of inverter circuits and used parts can be reduced.
• 4 to 8 tubes can be driven by circuit.
• Best choice for low-cost sets.
[Feature: Half-bridge Type (High voltage input)]
• A highly effiective system can be achived by using a high side driver, whitch can make the inverter cicuit to be operated at a PFC
voltage level.
MOSFET should be Nch type and withstand a high voltage.
Package
Polarity
Full-Bridge
Type No.
Nch
2SK3815 (60V/55mΩ)
Pch
2SJ659 (60V/133mΩ)
Set Size
[inch]
VIN
[V]
Package
SMP
P2
Q1
Pch
CCFL
TO-220ML
TO-220FI
Controller
Half-Bridge (Nch + Pch)
VEC8
(VECxxxx)
ECH8
(ECH8xxx)
P1
CCFL
N1
SOP8
(FSSxxxx(single))
(FWxxxx(Dual))
P1
Nch + Pch
FW349 (30V/84•106mΩ)
Nch + Pch
FW359 (30V/215•205mΩ)
Nch
CCFL
N1
Half-Bridge (High +B Voltage)
VIN(High)
VIN(Low)
TP
SMP
P1
N1
CCFL
Driver TND5XX
2SJ3702 (60V/55mΩ)
2SJ650 (60V/135mΩ)
2SK3706 (100V/130mΩ)
2SJ655 (100V/136mΩ)
2SK2161 (200V/350mΩ)
2SJ405 (200V/500mΩ)
2SK4096 (500V/710mΩ)
2SK4084 (500V/400mΩ)
VEC2602 (30V/99•168mΩ)
ECH8609 (30V/75•120mΩ)
ECH8402 (30V/32mΩ)
ECH8302 (30V/48mΩ)
ECH8616 (60V/133mΩ)
ECH8615 (60V/295mΩ)
FW344 (30V/150•147mΩ)
FW340 (30V/83•98mΩ)
FW342 (30V/52•98mΩ)
FSS802 (30V/26mΩ)
FSS163 (30V/31mΩ)
20
15 to 24V
up to 15V
at least 32
2SC6080 (80V/13A)
up to 15V
2SC5264 (800V/5A)
at least 100V
2) Recommended Power MOSFETs & Bipolar Transistors by Monitor Size
2SJ664 (100V/136mΩ)
12 to 24
[Power MOSFET Lineup by Input Voltage and Monitor Size]
PCP Package
at least 32
at least 60
5 to 12
2.5 to 8
Type No.
SOP8 Package
VDSS
[V]
ID
[A]
60
60
60
30
30
30
4
2
2
8
8
6
2SK3614
2SK3944
2SJ632
2SK3489
2SK3490
2SJ616
Type No.
FW250
FW359
FW248
FW349
TP Package
VDSS
[V]
ID
[A]
60
60
45
45
3
3
6
4
Type No.
2SK3978
2SK3977
SFT1202
SFT1201
SFT1305
SFT1307
SFT1405
SFT1407
SFT1403
SFT1402
15 to 24
VDSS
[V]
ID
[A]
200
100
180
150
45
45
45
45
35
35
4
4
2
2.5
10
14
10
14
11
14
5 to 12
Monitor Size [inch] (Standard)
20
15 to 19
15 to 24
CCFL
Controller
Half-Bridge
TO-220ML
TO-220FI
2SK3819 (100V/130mΩ)
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Nch
Nch + Pch
Nch + Pch
Nch
Pch
Nch + Nch
Pch + Pch
Nch + Pch
Nch + Pch
Nch + Pch
Nch
Pch
at least 32
2SC5888 (80V/10A)
Q2
at least 60
N2
CCFL
N1
Controller
Controller
P1
VIN
[V]
2SC5999 (120V/25A)
at least 32
Nch
Set Size
[inch]
2SC5915 (120V/10A)
VIN
12 to 24
SMP
Type No.
CCFL
Separately-excitation
Self-excitation
[Bipolar Transistor Lineup by Input Voltage and Monitor Size]
FSS273 (45V/34mΩ)
VEC8 Package
Pch
FSS145 (45V/40mΩ)
Type No.
VCES
[V]
IC
[A]
Nch
Pch
Nch
Nch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
2SK3351 (30V/21mΩ)
2SJ646 (30V/154mΩ)
2SK3285 (30V/34mΩ)
2SK3352 (30V/21mΩ)
SFT1402 (35V/69mΩ)
SFT1302 (35V/111mΩ)
SFT1405 (45V/74mΩ)
SFT1305 (45V/147mΩ)
2SK3615 (60V/85mΩ)
2SJ635 (60V/92mΩ)
2SK3818 (60V/18mΩ)
2SJ662 (60V/38mΩ)
2SK3979 (200V/450mΩ)
2SJ679 (200V/980mΩ)
2SK1920 (250V/700mΩ)
2SJ281 (250V/2Ω)
VEC2202
VEC2201
120
100
2.5
3
5 to 12
PCP Package
CPH3 Package
at least 32
15 to 24
32
Type No.
VCES
[V]
IC
[A]
CPH3252
CPH3251
CPH3247
CPH3239
CPH3236
CPH3223
180
150
120
100
100
100
2
2
2.5
5
3
3
TP Package
Type No.
VCES
*VCBO
[V]
IC
[A]
PCP1201
PCP1202
2SC6095
2SC6096
2SC3647
2SC5991
2SC5990
2SC5964
2SC5994
150
180
120
120
120*
100
100
100
100
2.5
2
2.5
2
2
7
4
3
2
SMP Package
Type No.
VCES
*VCBO
[V]
IC
[A]
2SC6071
2SD1816
2SD1815
2SC6098
2SC6099
2SC5980
2SC5979
2SC5707
2SC5706
2SC6022
2SC6020
120
120*
120*
120
120
100
100
80
80
40*
40*
10
4
3
2.5
2
8
5
8
5
9
6
Type No.
VCES
[V]
IC
[A]
2SC5974
2SC5999
2SC5915
700
120
120
7
25
10
Monitor Size [inch] (Standard)
at least 120
8
20
32
21
Devices for SW Power Supply
(4) Devices for Power MOSFET Buffer
2) High Voltage Driver ExPD
1) Low Side Driver ExPD [MOSFET, IGBT Gate driver IC]
[ExPD Use Example]
[Application]
• PDP, LCD-backlight, inverter light, liquid crystal projector, HID drive, motor drive, half-bridge/full-bridge power supply, etc.
• High withstand voltage driver (600V)
• Under-voltage protection function is built in
[ExPD Use Example]
Control IC
HIN
Load
INA
Control IC
• Withstand voltage of 25V is assured.
• 2 low side drivers in
• TTL/CMOS compatible
(VIH=2.6V or less at VDD=4.5 to 25V)
• High-speed switching time
(tr/tf=typ 25ns, at 1000pF load [TND301S])
MOSFET 1
OUTA
(Inverter)
OUTB
(Buffer)
Type No.
TND321VD
TND322VD
TND323VD
TND307TD
TND308TD
TND309TD
TND301S
TND302S
TND303S
TND304S
TND305S
TND306S
TND311S
TND312S
TND313S
TND314S
TND315S
TND316S
Package
Package
VEC8
TSSOP8
SOP8
Functions
Dual inverter
Dual buffer
Inverter buffer
Dual inverter
Dual buffer
Inverter buffer
Dual inverter
Dual buffer
Inverter buffer
Dual inverter
Dual buffer
Inverter buffer
Dual inverter
Dual buffer
Inverter buffer
Dual inverter
Dual buffer
Inverter buffer
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
0.2
0.2
0.2
0.25
0.25
0.25
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
VS
Load
LIN
LOUT
MOSFET 2
Drive capability
Source [A]
Sink[A]
0.8
0.8
0.8
1
1
1
2
2
2
1
1
1
2
2
2
1
1
1
1
1
1
1
1
1
2
2
2
1
1
1
2
2
2
1
1
1
VIH min
[V]
VIL max
[V]
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
VS
[V]
IO
Features
Sink
[mA]
600
200
400
600
250
500
TND508S
600
250
500
Ballasts, PDP maintenance drive, DC/AC
motor drive, induction heaters, charging
circuits, high-frequency switching power
Single input/two output half bridge supplies, switching amplifi ers, and other
driver circuits
general-purpose driver applications
● TND512MD
600
200
400
3-phase high side driver
TND507S
SOP8
TND505MD
600
250
500
600
250
500
MFP16
TND506MD
Single-phase high side driver
3-phase motor drive applicatioon
Two input/output half bridge driver
PDP maintenance drive, DC/AC motor
circuits.
drive, ballasts, charging circuits,
Built-in shutdown function and
high-frequency switching power supplies,
low-side priority circuit.
induction heaters, switching amplifiers,
Two input/output half bridge driver and other general-purpose driver
circuits.
applications
Built-in shutdown function.
* TND30x series: input terminal Hi Z (high impedance); TND31x/TND32x series: input pull-down resistor in.
22
Applications
Source
[mA]
● TND516SS
PD max
[W]
SD
ExPDs
ExPDs
VDD max
[V]
TND506MD
L
MOSFET 2
Type No.
Operating
voltage range
[V]
MOSFET 1
Load
TND3xx
INB
HOUT
23
Devices for SW Power Supply
3) LCD-Backlight Inverter: ExPD
5) Air conditioner fan motor drive: ExPD
[TND3xx Use Example: MOSFET Driver]
[TND512MD Use Example]
Half-Bridge MOSFET
Full-Bridge MOSFET
Push-Pull MOSFET
VM
C1
1000μF
TND3xx
C16
104
T1
T4
C17
104
T5
GND
VDD
VDD
C2
104
P1
P2
N1
VDD
VOUT
UOUT
P1
C18
104
WOUT
CCFL
N1
GND
TND3xx
T4
T2
N2
T6
TND3xx
VDD
N1
CCFL
N2
CCFL
TND3xx
GND
VCC
GND
R8
C3
10μF
R7
R9
[TND3xx Use Example: High-side FET Drive, Various Applications]
12V Power Supply Variation
R11
R12
R4
C12 105
9
TND512MD
D1 D2
24V
24V
1
Z3
DZD6.8
12V
2
3
4
5
6
7
8
C13
105
D3
P1
P1
C11
105
16 15 14 13 12 11 10
24V Power Supply Variation
12V
R10
C10
105
1.1kΩ
C25
472
C24
472
C23
472
GND
470Ω
P1
TND3xx
TND3xx
N1
GND
GND
C6
682
TND3xx
N1
GND
N
C5
682
C4
682
N1
12V
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
LB11696V
CTL
4) PDP Sustain Driver: ExPD
[TND5xx, TND3xx Use Example]
R21
10kΩ
R22
100kΩ
TND5XX
TND3XX
R5
D2
VDD
INA
OUTA
INB OUTB
VDD GND
HIN
C0
R6
D3
SD
LIN
HOUT
VH
D1
R1
C3
R3
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
R23
100kΩ
J6 J7
C8
104
C7
182
J4 J5
C9
R24
4.7μF
20kΩ
R24
20kΩ
F/R
RD
PWMIN
HP
PDP Panel
Vp
HFG
VL
Cp
GND
LOUT
R2
R4
Control IC
24
25
C19
104
C21
104
T1 to T6: 2SK2624
D1 to D3: DFD05TC
Devices for SW Power Supply
■ DC-DC Converter IC
6) Bipolar Transistors: Separately-excited Inverter (MOSFET for Gate Drive)
TN8D41A/51A, TN5D41A/51A/61A: Separately-excited step-down switching regulator
[Bipolar Transistor Use Example]
[Functions/Features]
• Large current
IO max 8A (TN8D41A/51A)
IO max 5A (TN5D41A/51A/61A)
• High efficiency
Vertical-type P-channel power MOSFET built-in
• High withstand voltage VIN max 57V
• Five external parts
• IC with large IC is recommended for driving large-capacitance MOSFET
• Composite type (PNP+NPN) is recommended for miniaturization purpose
Full-Bridge
Push-Pull
Buffer Transistor Circuit
Type No.
TN5D41A
TN8D41A
TN5D51A
TN8D51A
TN5D61A
VDD
VDD
P2
P1
Buffer TR
Buffer TR
N1
Buffer TR
CCFL
Buffer TR
VDD
GND
Buffer TR
N2
N1
Input voltage
Output voltage/current
Channels
Power stage
Package
10V to 40V
10V to 40V
20V to 48V
20V to 48V
30V to 48V
5V/5A
5V/8A
12V/5A
12V/8A
24V/5A
1ch
1ch
1ch
1ch
1ch
Built-in (PMOS)
Built-in (PMOS)
Built-in (PMOS)
Built-in (PMOS)
Built-in (PMOS)
TO-220FI5H-HB
TO-220FI5H-HB
TO-220FI5H-HB
TO-220FI5H-HB
TO-220FI5H-HB
N2
CCFL
Buffer TR
Type
Step-down
Step-down
Step-down
Step-down
Step-down
[ExPD Use Example]
GND
Buffer TR
VIN
VIN
1
GND
Under Voltage
Protect
Over
Temperature
Protect
MCH5541
MCPH5
MCH6542
MCPH6
MCH6545
CPH5541
CPH5506
CPH5516
CPH5
CPH5518
CPH5524
SWOUT
VOUT
Over Current
Protect
SENSE
OUTPUT
Absolute maximum ratings/Ta=25˚C
Package
3
Pch MOSFET
Bipolar Transistors
Type No.
• Built-in reference oscillator (150kHz)
• Built-in current limiter
• Built-in thermal shutdown circuit
• Built-in soft start circuit
• ON/OFF function (shared with soft start pin)
Polarity VCEO
[V]
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
30
30
30
30
50
50
30
30
30
30
30
30
50
50
50
50
IC
[A]
ICP
[A]
PC
[W]
0.7
0.7
0.3
0.3
0.5
0.5
0.7
0.7
1.5
1.5
2
2
1
1
3
3
3
3
0.9
0.9
1
1
3
3
5
5
6
6
3
3
6
6
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
Electrical characteristics/Ta=25˚C
hFE
VCE (sat) [V]
VCE
[V]
IC
[A]
min
max
IC
[A]
IB
[mA]
typ
max
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
0.01
0.05
0.01
0.01
0.01
0.01
0.01
0.05
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
200
300
200
300
200
300
200
300
200
200
200
200
200
200
200
200
500
800
500
800
500
700
500
800
560
560
560
560
560
560
560
560
0.2
0.2
0.1
0.1
0.1
0.1
0.2
0.2
0.75
0.75
1.5
1.5
0.5
0.5
1
1
10
10
5
5
10
10
10
10
15
15
75
75
10
10
50
50
0.11
0.085
0.11
0.1
0.06
0.05
0.11
0.085
0.25
0.15
0.17
0.16
0.23
0.13
0.115
0.09
0.22
0.19
0.22
0.2
0.12
0.1
0.22
0.19
0.375
0.225
0.26
0.24
0.38
0.19
0.23
0.13
Internal chip
Electrical
equivalent
connection
product
30A02MH
+30C02MH
B14
30A01M
+30C01M
B13
50A02CH
+50C02CH
B13
30A02CH
+30C02CH
B14
CPH3115
+CPH3215
B14
CPH3144
+CPH3244
B14
CPH3116
+CPH3216
B14
CPH3123
+CPH3223
B14
+
-COMP
+
OSC
SS
5
SOFTSTART
Band Gap
+ AMP
--
GND
FB
4
2
GND
+
GND
[Application Example for Power Supply Makers: Allows High Design Freedom]
ACIN
24V Output
PFC
Control
5/3.3V
Output
[Proposal]
1. Simplification of circuits
2. Common-ization of circuits
3. Helps reduce designing time
ACIN
B13
C1
B2
B14
E2
C2
PFC
Control
C1
24V Output
TN5D/8D
Series
5 to 8A Output
E1
B1
C2
B2
EC
B1
26
27
5/3.3V
Output
Devices for Lighting
■ Inverter light
[Bipolar Transistor Use Example: Ball Lamp]
[MOSFET Use Example]
D2
H
DB1
L1
L1
D3
RD1006LS(600V/10A)
D4
OUT1
for Inverter circuit use
(2 devices are used)
Inductor
DB
N
C2
R2
Q2
OUT2
Q1
NPN
V1
AC
C5
OUT3
Q3
for PFC circuit
C
+
+
C1
C4
TND506
to
TND509
OUT4
+
C1
C3
L2
C2
Light
Q4
R
Q2
NPN
Light
Control IC
R
R
Recommended Devices and Spec: Surface Mount Type
Recommended devices by inverter lighting set [AC=200V input]
TO-220
max
VCE
[V]
IC
[A]
5
0.03
50
100
5
0.15 at least 10 hFE of low current side is high
NPN
700
400
1
5
0.1
50
100
5
NPN
NPN
NPN
NPN
700
500
500
500
400
400
400
400
1
5
8
12
1
5
5
5
0.1
0.5
0.8
1.2
15
20
20
20
30
50
50
50
5
5
5
5
0.5
3
4
6
Package is small
tf=0.3μs
tf=0.3μs
tf=0.3μs
2SK4137×2
2SK4182×2
2SK4136×2
2SK4181×2
Type No.
DB1
●
●
●
●
●
●
C5
OUT1
C1
Q1
NTC1
N
OUT2
C4
C6
R3
C3
PTC1
R2
Package
2SK4136
2SK4137
2SK4138
2SK4181
2SK4182
2SK4183
ZP
Set output
(Fluorescent tube) [W]
OUT4
T1
ZD2
L2
C7
Q2
10.0
6.0
RDS (on) [Ω]
VGS=10(15)V
VDSS
[V]
VGSS
[V]
ID
[A]
PD
Tc=25˚C
[W]
typ
max
500
500
500
525
525
525
30
30
30
30
30
30
8
9.5
14
7.5
9
13
70
80
100
70
80
100
0.65
0.5
0.4
0.71
0.58
0.45
0.85
0.65
0.52
0.92
0.75
0.58
PFC circuit
Inverter circuit
Ciss
[pF]
600
750
1000
600
750
1000
40×2
2SK4186LS
2SK4198LS×2
86×2
2SK4186LS×2
2SK4199LS×2
86×3
2SK4187LS×2
2SK4187LS×2
4.5
10.0
Remarks
3.2
[TO-220FI(LS) Package]
MOSFETs
2SJ281
● 2SK3979
2SK1920
●: New products
Absolute maximum ratings/Ta=25˚C
●: New products
Package
PCP
Polarity
Pch
Nch
Nch
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
250
200
250
30
30
30
3
6
4
30
20
30
28
Type No.
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
VGS=10(15)V
typ
max
1.5
0.32
0.5
2.8
0.9
1.2
1.2
2
0.45
0.7
VGS=4(4.5)V
typ
max
-
-
Ciss
[pF]
Qg
[nC]
420
1090
420
18.2
-
●
●
●
●
2SK4098LS
2SK4099LS
2SK4086LS
2SK4087LS
Package
TO-220FI(LS)
VDSS
[V]
VGSS
[V]
ID
IDc*
[A]
PD
Tc=25˚C
[W]
600
600
600
600
30
30
30
30
7
8.5
11.5*
14*
33
35
37
40
1 2 3
2.4
MOSFETs
Type No.
7.8
Electrical characteristics/Ta=25˚C
0.75
Absolute maximum ratings/Ta=25˚C
0.3
0.6
1.0
2.54
5.08
16.0
ZD1
2
Recommended devices by inverter lighting set [AC=200V input]
NTC2
R4
1
Recommended Devices and Spec: Lead Type
OUT3
+
C2
1.0
2.54
●: New products
Absolute maximum ratings/Ta=25˚C
H
NF
2SK4138×2
2SK4183×2
[ZP Package]
w good surface radiation due to thin body
PD up better radiation than that of
SMP package. 10% PD up.
MOSFETs
[MOSFET Use Example: Ball Lamp]
R1
2SK4138×2
2SK4183×2
86×2
20 to 60
20 to 60
65 to 130
0.4
0.2
40×2
up to 20
hFE of low current side
0.5 at least 10
20 to 60
is high, package is small
at least 10
at least 10
at least 10
at least 10
32×2
0.6
0.7
min
525V device is recommended when a
larger margin is needed.
8.4
10.0
0.3
IC
[A]
2SK4136×2
2SK4181×2
1.2
400
VCE
[V]
2SK4136×2
2SK4181×2
0.6
NMP
700
Merit
6.2
5.2
TT2240NMP
TT2188
TT2146
TT2196
IC
[A]
8.2
7.8
6.2
3
Remarks
14.0
2SC6083A
SPA
VCEO
[V]
Inverter circuit
3.5
NPN
VCBO
[V]
PFC circuit
7.2
TT2264
Polarity
hFE2
Set output
(Fluorescent tube) [W]
4.2
Package
hFE1
Set
power
[W]
16.1
Type No.
Electrical characteristics/Ta=25˚C
3.6
Absolute maximum ratings/Ta=25˚C
2.5
Bipolar Transistors
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
VGS=10(15)V
typ
max
0.9
0.72
0.58
0.47
29
1.1
0.94
0.75
0.61
Ciss
[pF]
Qg
[nC]
660
815
1000
1200
38.2
46
2.55
2.55
0.7
Devices for Lighting
Devices for Modem and Infrared Sensor
■ Emergency Lamp
■ Devices for Modem
[2SK4043LS Use Example]
[High-Voltage Transistor Use Example for MODEM Circuit]
High-voltage TR
TIP
FUSE
T1
Lamp
Safety
&
Protection
Modular Jack
Modem
Controller
RING
AC
High-voltage TR
Q1
+
Control IC
C1
Q2
High-voltage
TR
FUSE
RS
Battery
D9
+
Transistors for Modem Circuit
MOSFETs
● 2SK4043LS
Electrical characteristics/Ta=25˚C
●: New products
Absolute maximum ratings/Ta=25˚C
Type No.
●: New products
Absolute maximum ratings/Ta=25˚C
Package
TO-220FI(LS)
Type No.
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
VDSS
[V]
VGSS
[V]
ID
[A]
PD
Tc=25˚C
[W]
typ
max
typ
30
10
20
20
0.016
0.021
0.017
VGS=2.5V
VGS=4V
max
0.024
Ciss
[pF]
Qg
[nC]
3000
37
■ HID Lamp
[MOSFET Use Example]
VL
SOP8501
SOP8
OUT
Thre
LB8555
Timer IC
PNP
PNP
PNP
NPN
NPN
NPN
PNP
NPN
IC
[A]
PC
[W]
min
max
400
400
400
400
400
400
400
400
0.2
0.2
1
1
0.2
0.2
1
0.2
1.3
0.6
1
0.6
1.3
0.5
1.3
1.3
60
60
40
50
60
60
40
60
200
200
200
100
200
200
200
200
IN
HFG
SD
LOUT
GND
Signal
(Infrared rays etc.)
1
- +
+ +
Thermal energy
GND
max
70
70
50
20
70
70
70
70
50
50
200
10
50
50
0.2
0.05
5
5
20
100
5
5
20
5
0.8
0.8
1
0.8
0.6
0.6
1
0.6
D
Sensor
2
S
R
Output
G
Amplifier
Comparator
●: New products
Absolute maximum ratings/Ta=25˚C
2SK4136
2SK2617ALS
2SK2618ALS
2SK2625ALS
2SK4098LS
IB
[mA]
Optical lens
MOSFETs
●
●
●
●
●
IC
[mA]
HOUT
3
Type No.
VCE (sat) [V]
fT
typ
[MHz]
[Junction FET Use Example]
VH
TND507S
TND508S
VCC Reset
GND
PCP
NP
NMP
CPH
PCP
NP
hFE
VCEO
[V]
■ Devices for infrared sensor
FRD
Trig
2SA1740
2SA1699
2SA1785
● CPH3249A
2SC4548
2SC4002
Polarity
*1: When mounted on ceramic substrate (250mm2×0.8mm)
VL=15V
DISC
Package
Electrical characteristics/Ta=25˚C
RDS (on) [Ω]
VGS=10(15)V
Package
VDSS
[V]
VGSS
[V]
ID
[A]
PD
Tc=25˚C
[W]
typ
max
ZP
500
500
500
600
600
30
30
30
30
30
8
5
6.5
5
7
70
25
30
30
33
0.65
1.2
0.95
1.5
0.9
0.85
1.6
1.25
2
1.1
TO-220FI(LS)
30
Ciss
[pF]
Qg
[nC]
600
550
700
700
660
15
20
20
-
Junction FET
●: New products
Absolute maximum ratings/Ta=25˚C
Type No.
● EC3A04B
Package
ECSP1006-3B
VDSX
[V]
VGDS
VGDO
[V]
ID
[mA]
PD
[mW]
30
30
10
100
Electrical characteristics/Ta=25˚C
IDSS
[mA]
min
max
|yfs|
typ
[mS]
0.6
3
5
31
Ciss
typ
[pF]
Crss
typ
[pF]
4
1.1
Typical Applications
humanbody detection, temp.
detection, automatic switching, etc.
Devices for Satellite/GPS
FM Transmitter
■ Satellite LNB
■ FM Transmitter
[Satellite LNB]
[Varactor Diode Use Example]
Frequency: 9 to 14GHz
VCC=+14.4V (From cigarette Lighter in a car)
RF IN
V_Reg
LNA.
MIX
IF Amp.
CONT.
3.3V
IF OUT
3LN02M✕5
VDD
AS
Lo
CLK
RF OUT
LV2282VA
DATA
LO
ATT
PON
VCO
Ultrahigh-Frequency Transistors
f_Ref
Absolute maximum ratings/Ta=25˚C
Type No.
MCH4009
MCH4011
MCH4012
MCH4020
Package
Electrical characteristics/Ta=25˚C
|S21e|2
NF
VCEO
[V]
IC
[mA]
PC
[mW]
fT
typ
[GHz]
f
[GHz]
typ
[dB]
f
[GHz]
VCE
[V]
IC
[mA]
typ
[dB]
3.5
3.5
3.5
8
40
100
200
150
120
350
500
500
25
24
20
16.5
2
2
2
2
1.1
1.1
1.0
1.2
2
2
2
1
3
3
3
5
20
50
100
50
17
14.5
12
17.5
MCPH4
High-Frequency Schottky Barrier Diodes
● SBX201C
Lo/IF Amp.
Lo/IF Amp.
Lo/IF Amp.
Lo/IF Amp.
Electrical characteristics/Ta=25˚C
Package
VR
[V]
IF
[mA]
P
[mW]
VF
[mV]
Conversion Loss
[dB]
C
typ [pF]
Block
CP
2
50
-
280
8.6
0.25
Mixer
■ GPS/XM Antenna Module
[GPS/XM Antenna Module]
ANTENNA
MODULE
Frequency: 1.57 to 2.3GHz
NAVIGATION
SECTION
RF IN
LNA.
MIX
LNA.
IF Amp.
IF
OUT
ESD
Lo
LO
High-Frequency Transistors
Absolute maximum ratings/Ta=25˚C
Type No.
MCH4009
MCH4011
MCH4012
MCH4013
EC4H08C
EC4H09C
Package
MCPH4
ECSP1008
Varactor Diode
Absolute maximum
ratings/Ta=25˚C
Type No.
Package
●: New products
Absolute maximum ratings/Ta=25˚C
Type No.
Block
Electrical characteristics/Ta=25˚C
|S21e|2
NF
VCEO
[V]
IC
[mA]
PC
[mW]
fT
typ
[GHz]
f
[GHz]
typ
[dB]
f
[GHz]
VCE
[V]
IC
[mA]
typ
[dB]
3.5
3.5
3.5
3.5
3.5
3.5
40
100
200
15
15
40
120
350
500
120
50
120
25
24
20
22.5
24
26
2
2
2
2
2
2
1.1
1.1
1.0
1.5
1.5
1.3
2
2
2
2
2
2
3
3
3
5
3
3
20
50
100
5
10
20
17
14.5
12
16
17
16.5
32
Block
LNA
LNA
LNA
LNA
LNA
LNA
EC2C01C
SVC710
SVC707
ECSP1008-2
MCPH3
SPA
VR
[V]
15
15
15
Electrical characteristics/Ta=25˚C
C1
VR
[V]
min
1
1
1
18.5
18.5
18.58
C2
max
VR
[V]
min
max
21.5
21.5
21.26
4
4
4
3.5
3.5
3.61
4.5
4.8
4.73
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
33
∆Cm [%]
C1.0V/C4.0V
max
5.0
4.8
3.0
Ordering number : EP124
SANYO Semiconductor Co.,Ltd. Website
http://www.semic.sanyo.co.jp/index_e.htm
This catalog provides information as of June, 2008.
Specifications and information herein are subject to change without notice.
SANYO Semiconductor Co., Ltd.