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INTRODUCTION: ANALYSIS AT DIFFERENT TEMPERATURES
§1.2
Temperature appears explicitly in the value of junction potential, φ (in spice PHI), for all the device
models. The temperature dependence is determined by:
φ(T) =
I N N
kT
a d
loge J hhhhhh2
q
N
(T)
L
i
hhh
M
J
O
where k is Boltzmann’s constant, q is the electronic charge, Na is the acceptor impurity density, Nd is
the donor impurity density, Ni is the intrinsic carrier concentration, and Eg is the energy gap.
Temperature appears explicitly in the value of surface mobility, µ0 (or UO), for the MOSFET model.
The temperature dependence is determined by:
µ0(T) =
µ0(T0)
hhhhhhhh
I
J
L
T
T0
hhh
M
1.5
J
O
The effects of temperature on resistors is modeled by the formula:
R(T) = R(T0) [1 + TC1 (T − T0) + TC2 (T − T0)2]
where T is the circuit temperature, T0 is the nominal temperature, and TC1 and TC2 are the first- and
second-order temperature coefficients.
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