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4.5. Bipolar Junction Transistor
Name
Description
Units
Default
Area
VAR
Reverse Early voltage
V
∞
IKR
Corner for reverse beta high current rolloff
A
∞
∞
ISC
B-C leakage saturation current
A
0
∞
NC
B-C leakage emission coefficient
2
NK,
NKF
0.5
RB
Zero bias base resistance
Ω
0
IRB
Current at which base resistance falls
halfway to its minimum value
A
∞
RBM
Minimum base resistance at high currents
Ω
RB
RE
Emitter resistance
Ω
0
RC
Collector resistance
Ω
0
CJE
B-E zero-bias depletion capacitance
F
0
VJE,
PE
B-E built in potential
V
0.75
MJE,
ME
B-E junction exponential factor
TF
Ideal forward transit time
XTF
Coefficient
TF
VTF
Voltage describing VBC dependence of
TF
V
∞
ITF
High-current
TF
A
0
PTF
Excess
Hz
degree
0
CJC
B-C zero-bias depletion capacitance
F
0
VJC,
PC
B-C built-in potential
V
0.75
MJC,
MC
B-C junction exponential factor
0.33
XCJC
Fraction of B-C depletion capacitance connected to internal base node
1
TR
Ideal reverse transit time
Sec.
0
ISS
Substrate diode saturation current
A
0
NS
Substrate diode emission coefficient
CJS,
CCS
Zero-bias
tance
VJS,
PS
Substrate junction built-in potential
MJS,
MS
Substrate
tor
for
bias
phase
at
collector
junction
Sec.
for
effect
of
on
freq=1.0/(TF×2π)
substrate
0
0
∞
∞
∞
1
capaci-
exponential
48
∞
0.33
dependence
parameter
∞
fac-
F
0
V
0.75
∞
0
SIMetrix Simulator Reference Manual