Download Transcend 64MB SDRAM PC100 Unbuffer Non-ECC Memory

168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
Description
Placement
The TS8MLS64V8C is a 8M bit x 64 Synchronous
Dynamic
RAM
high
density
for
PC-100.
The
TS8MLS64V8C consists of 4pcs CMOS 8Mx16 bits
Synchronous DRAMs in TSOP-II 400mil packages and a
2048 bits serial EEPROM on a 168-pin printed circuit
board. The TS8MLS64V8C is a Dual In-Line Memory
Module and is intended for mounting into 168-pin edge
connector sockets.
Synchronous design allows precise cycle control with
the use of system clock. I/O transactions are possible on
A
every clock cycle. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
B
Features
D
• Performance Range: PC-100.
E
• Conformed to JEDEC Standard Spec.
C
• Burst Mode Operation.
• Auto and Self Refresh.
• CKE Power Down Mode.
E
• DQM Byte Masking (Read/Write)
H
• Serial Presence Detect (SPD) with serial EEPROM
G
F
• LVTTL compatible inputs and outputs.
• Single 3.3V ± 0.3V power supply.
• MRS cycle with address key programs.
PCB: 09-7130
Latency (Access from column address)
Burst Length (1,2,4,8 & Full Page)
Data Sequence (Sequential & Interleave)
• All inputs are sampled at the positive going edge of
the system clock.
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1
I
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
Dimensions
Pin Identification
Side
Millimeters
A
133.35±0.40
5.250±0.016
B
65.67
2.585
C
23.49
0.925
D
8.89
E
Symbol
Inches
Function
A0 ~ A11, BA0, BA1 Address input
DQ0 ~ DQ63
Data Input/Output.
0.350
CLK0, CLK2
Clock Input..
3.00
0.118
CKE0
Clock Enable Input.
F
31.75±0.20
1.250±0.008
/CS0, /CS2
Chip Select Input.
G
19.80
0.788
H
15.80
0.622
/RAS
Row Address Strobe
I
1.27±0.10
0.050±0.004
/CAS
Column Address Strobe
/WE
Write Enable
DQM0 ~ DQM7
Data (DQ) Mask
SA0 ~ SA2
Address in EEPROM
SCL
Serial PD Clock
SDA
Serial PD Add/Data input/output
Vcc
+3.3 Voltage Power Supply
Vss
Ground
NC
No Connection
(Refer Placement)
Transcend information Inc
2
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
Pinouts:
Pin
Pin
Pin
Pin
No
Name
No
Name
01
Vss
43
Vss
02
DQ0
44
NC
03
DQ1
45
/CS2
04
DQ2
46
DQM2
05
DQ3
47
DQM3
06
Vcc
48
NC
07
DQ4
49
Vcc
08
DQ5
50
NC
09
DQ6
51
NC
10
DQ7
52
*CB2
11
DQ8
53
*CB3
12
Vss
54
Vss
13
DQ9
55
DQ16
14
DQ10
56
DQ17
15
DQ11
57
DQ18
16
DQ12
58
DQ19
17
DQ13
59
Vcc
18
Vcc
60
DQ20
19
DQ14
61
NC
20
DQ15
62
*Vref
21
*CB0
63
*CKE1
22
*CB1
64
Vss
23
Vss
65
DQ21
24
NC
66
DQ22
25
NC
67
DQ23
26
Vcc
68
Vss
27
/WE
69
DQ24
28
DQM0
70
DQ25
29
DQM1
71
DQ26
30
/CS0
72
DQ27
31
NC
73
Vcc
32
Vss
74
DQ28
33
A0
75
DQ29
34
A2
76
DQ30
35
A4
77
DQ31
36
A6
78
Vss
37
A8
79
*CLK2
38
A10/AP
80
NC
39
BA1
81
NC
40
Vcc
82
SDA
41
Vcc
83
SCL
42
CLK0
84
Vcc
* Please refer Block Diagram
Transcend information Inc
Pin
No
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
3
Pin
Name
Vss
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
DQ40
Vss
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
*CB4
*CB5
Vss
NC
NC
Vcc
/CAS
DQM4
DQM5
*/CS1
/RAS
Vss
A1
A3
A5
A7
A9
BA0
A11
Vcc
*CLK1
*A12
Pin
No
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Pin
Name
Vss
CKE0
*/CS3
DQM6
DQM7
*A13
Vcc
NC
NC
*CB6
*CB7
Vss
DQ48
DQ49
DQ50
DQ51
Vcc
DQ52
NC
*Vref
*REGE
Vss
DQ53
DQ54
DQ55
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
Vss
*CLK3
NC
SA0
SA1
SA2
Vcc
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
Block Diagram
/CS
CLK
CKE0
CKE
/CS
CLK
CKE
DQM4
DQM0
/RAS
/CAS
/WE
8Mx16
SDRAM
/CS
DQM5
DQM1
CLK
CKE
/RAS
/CAS
/WE
8Mx16
SDRAM
/CS
DQM6
DQM2
CLK
CKE
UDQM
/CS0
CLK0
/WE
8Mx16
SDRAM
A0~A11,
BA0,BA1
DQ0~DQ15
LDQM
/WE
/CAS
UDQM
/WE
/RAS
8Mx16
SDRAM
A0~A11,
BA0,BA1
DQ0~DQ15
LDQM
/CAS
UDQM
/RAS
/CAS
LDQM
/RAS
A0~A11,
BA0,BA1
DQ0~DQ15
UDQM
DQ0~DQ63
A0~A11,
BA0,BA1
DQ0~DQ15
LDQM
A0~A11,BA0,BA1
DQM7
DQM3
/CS2
CLK2
Serial EEPROM
SCL
SCL
A0
SDA
A1
SDA
A2
SA0 SA1 SA2
This technical information is based on industry standard data and tests believed to be reliable. However, Transcend
makes no warranties either expressed or implied, as to its accuracy and assumes no liability in connection with the use
of this product. Transcend reserves the right to make changes in specifications at any time without prior notice.
Transcend information Inc
4
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply to Vss
Storage temperature
Power dissipation
Short circuit current
Operating Temperature
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
TA
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
4
50
0~70
Unit
V
V
°C
W
mA
°C
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD
3.0
3.3
3.6
V
Input high voltage
VIH
2.0
3.0
VDD+0.3
V
Input low voltage
VIL
-0.3
0
0.8
V
Output high voltage
VOH
2.4
V
Output low voltage
VOL
0.4
V
Input leakage current (Inputs)
IIL
-10
10
uA
Input leakage current (I/O pins)
IIL
-1.5
1.5
uA
Note
1
2
IOH=-2mA
IOL=2mA
3
-
Note: 1. VIH (max) = 5.6V AC .The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC .The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 3.3V, TA = 20°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Input capacitance (A0~A11, BA0, BA1)
Input capacitance (/RAS, /CAS, /WE)
Input capacitance (CKE0)
Input capacitance (CLK0, CLK2)
Input capacitance (/CS0, /CS2)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Transcend information Inc
Symbol
Min
Max
Unit
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
COUT1
15
15
15
10
10
8
9
25
25
25
13
15
10
12
pF
pF
pF
pF
pF
pF
pF
5
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
CAS Latency
Operating Current
(One Bank Active)
Precharge Standby Current ICC2P
in power-down mode
ICC2PS
ICC2N
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Burst Length =1
tRC≥tRC(min)
IOL=0mA
ICC1
ICC2NS
Unit
Note
400
mA
1
CKE≤VIL (max), tCC=10ns
8
CKE & CLK≤VIL (max), tCC=∞
8
CKE≥VIH (min), /CS≥VIH (min), tCC=10ns
Input signals are changed one time during 20ns
CKE≥VIH (min), CLK≤VIL (max), tCC=∞
80
mA
ICC3P
CKE≤VIL (max), tCC=10ns
20
ICC3PS
CKE & CLK≤VIL (max), tCC=∞
20
ICC3N
CKE≥VIH (min), /CS≥VIH (min), tCC=10ns
Input signals are changed one time during 20ns
IOL= 0 mA
Page Burst
tccD = 2CLKs
ICC4
Refresh Current
ICC5
tRC≥tRC(min)
Self Refresh Current
ICC6
CKE≤0.2V
Note: 1. Measured with outputs open.
2. Refresh period is 64ms.
6
mA
120
mA
ICC3NS CKE≥VIH (min), CLK≤VIL(max), tCC=∞
Operating Current
(Bust Mode)
mA
40
Input signals are stable
100
Input signals are stable
Transcend information Inc
Value (Typ)
3
520
2
520
mA
1
760
mA
2
8
mA
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
AC OPERATING TEST CONDITIONS (VDD = 3.3V,0.3V, TA = 0 to 70°C)
Parameter
AC Input levels (VIH/VIL)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
Unit
2.4/0.4
V
1.4
V
tr/tf=1/1
ns
1.4
V
See Fig. 2
Vtt=1.4V
3.3V
50 Ohm
1200 Ohm
Output
VOH (DC)=2.4V, IOH=-2mA
VOL (DC)=0.4V, I OL=2mA
Output
Z0=50 Ohm
50pF
50pF
870 Ohm
(Fig. 2) AC Output Load Circuit
(Fig. 1) DC Output Load Circuit
OPERATING AC PARAMETER (AC operating conditions unless otherwise noted)
Parameter
Symbol
Value
Unit
Note
Row active to row active delay
tRRD(min)
20
ns
1
/RAS to /CAS delay
tRCD(min)
20
ns
1
Row precharge time
tRP(min)
20
ns
1
tRAS(min)
50
ns
1
tRAS(max)
100
us
Row cycle time
tRC(min)
70
ns
1
Last data in to new col. address delay
tCDL(min)
1
CLK
2
Last data in to row precharge
tRDL(min)
2
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. address to col. address delay
tCCD(min)
1
CLK
3
ea
4
Row active time
Number of valid
output data
Note:
CAS latency=3
2
CAS latency=2
1
1. The minimum number of clock cycles is determined by dividing the minimum time required with
clock cycle time, and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
Transcend information Inc
7
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Refer to the individual component, not the whole module.
Parameter
Symbol
CLK cycle time
CAS latency=3
CAS latency=2
CLK to valid
output delay
CAS latency=3
Output data
hold time
CAS latency=3
Min
10
tCC
Max
Unit
Note
1000
ns
1
ns
1, 2
ns
2
10
6
tSAC
CAS latency=2
6
3
tOH
CAS latency=2
3
CLK high pulse width
tCH
3
ns
3
CLK low pulse width
tCL
3
ns
3
Input setup time
tSS
2
ns
3
Input hold time
tSH
1
1
3
CLK to output in Low-Z
tSLZ
1
1
2
CLK to output
in Hi-Z
CAS latency=3
6
tSHZ
ns
6
CAS latency=2
Note: 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)= 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Transcend information Inc
8
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
SIMPLIFIED TRUTH TABLE
COMMAND
CKEn-1 CKEn
Register
Mode Register Set
Refresh
Auto Refresh
Self
Refresh
Entry
Exit
Bank Active & Row Addr.
Read &
Column
Address
Write &
Column
Address
Burst Stop
Precharge
(V=Valid, X=Don’t Care, H=Logic High, L=Logic Low)
Auto Precharge Disable
Auto Precharge Enable
/RAS
/CAS
/WE
DQM
BA0,1
A10/AP A11, A0~A9
H
X
L
L
L
L
X
OP CODE
H
H
L
L
L
L
H
X
X
L
H
L
H
H
X
H
X
H
X
X
X
H
X
L
L
H
H
X
V
H
X
L
H
L
H
X
V
H
X
L
H
L
L
X
V
H
X
L
H
H
L
X
H
X
L
L
H
L
X
H
L
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
H
X
X
X
L
H
H
H
Auto Precharge Disable
Auto Precharge Enable
Clock Suspend or
Active Power Down
Bank Selection
Both Banks
Entry
Exit
Precharge Power
Down Mode
L
H
H
L
Entry
L
DQM
No Operation Command
V
X
1,2
3
3
3
3
Row Address
L
H
L
H
X
L
H
Column
Address
(A0~A8)
Column
Address
(A0~A8)
4
4, 5
4
4, 5
6
X
X
X
X
X
H
X
H
H
X
X
V
X
X
X
1. OP Code : Operand Code
A0~A11, BA0~BA1 : Program keys. (@MRS)
2. MRS can be issued only at both banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by “Auto”.
Auto/self refresh can be issued only at both banks precharge state.
4. BA0~BA1: Bank select address.
If both BA0 and BA1 are “Low” at read, write, row active and precharge, bank A is selected.
If both BA0 is “Low” and BA1 is “High” at read, write, row active and precharge, bank B is selected.
If both BA0 is “High” and BA1 is “Low” at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are “High” at read, write, row active and precharge, bank D is selected.
If A10/AP is “High” at row precharge, BA0 and BA1 is ignored and both banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edged of a CLK masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Transcend information Inc
Note
X
Exit
Note:
/CS
9
7
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
Serial Presence Detect Specification
Serial Presence Detect
Byte No.
Function Described
0
1
2
3
4
5
6
7
8
9
10
11
# of Bytes Written into Serial Memory
Total # of Bytes of S.P.D Memory
Fundamental Memory Type
# of Row Addresses on this Assembly
# of Column Addresses on this Assembly
# of Module Banks on this Assembly
Data Width of this Assembly
Data Width Continuation
Voltage Interface Standard of this Assembly
SDRAM Cycle Time (highest CAS latency)
SDRAM Access from Clock (highest CL)
DIMM configuration type (non-parity, ECC)
12
Refresh Rate Type
13
14
15
16
17
18
19
20
21
Primary SDRAM Width
Error Checking SDRAM Width
Min Clock Delay Back to Back Random Address
Burst Lengths Supported
Number of banks on each SDRAM device
CAS # Latency
CS # Latency
Write Latency
SDRAM Module Attributes
22
SDRAM Device Attributes : General
23
24
25
26
27
28
29
30
31
32
33
34
35
36-61
SDRAM Cycle Time (2nd highest CL)
SDRAM Access from Clock (2nd highest CL)
SDRAM Cycle Time (3rd highest CL)
SDRAM Access from Clock (3rd highest CL)
Minimum Row Precharge Time
Minimum Row Active to Row Activate
Minimum RAS to CAS Delay
Minimum RAS Pulse Width
Density of Each Bank on Module
Command/Address Setup Time
Command/Address Hold Time
Data Signal Setup Time
Data Signal Hold Time
Superset Information
Transcend information Inc
10
Standard
Specification
128bytes
256bytes
SDRAM
12
9
1 bank
64bits
LVTTL3.3V
10ns
6ns
Non parity
15.625us/Self
Refresh
X16
None
1 clock
1,2,4,8 & Full page
4 bank
2&3
0 clock
0 clock
Non Buffered
Prec All, Auto Prec,
R/W Burst
12ns
7ns
20ns
20ns
20ns
50ns
1 row of 64MB
2ns
1ns
2ns
1ns
-
Vendor Part
80
08
04
0C
09
01
40
00
01
A0
60
00
80
10
00
01
8F
04
06
01
01
00
0E
C0
70
00
00
14
14
14
32
10
20
10
20
10
00
168PIN PC100 Unbuffered DIMM
64MB With 8Mx16 CL3
TS8MLS64V8C
62
63
64-71
72
SPD Data Revision Code
Checksum for Bytes 0-62
Manufacturers JEDEC ID Code per JEP-108E
Manufacturing Location
JEDEC2
Transcend
T
12
3D
7F, 4F
54
54 53 38 4D 4C 53
73-90
91-92
93-94
95-98
99-125
126
127
128~
Manufacturers Part Number
Revision Code
Manufacturing Date
Assembly Serial Number
Manufacturer Specific Data
Intel Specification Frequency
Intel Specification CAS# Latency/Clock Signal Support
Unused Storage Locations
Transcend information Inc
11
TS8MLS64V8C
36 34 56 38 43 20
By Manufactory
By Manufactory
100MHz
CL=2, 3 Clock 0~3
Open
20 20 20 20 20 20
0
Variable
Variable
0
64
F4
FF