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Download S3C2440 data sheet
Transcript
ELECTRICAL DATA S3C2440A RISC MICROPROCESSOR Normal I/O PAD DC Electrical Characteristics for Memory (V DDMOP=3.0V±0.3V, 3.3V±0.3V, TA= –40 to 85 °C) Symbol VIH Parameters Condition Typ. 2.0 Low level input voltage V 0.8 VT Switching threshold VT+ Schmitt trigger, positive-going threshold CMOS VT– Schmitt trigger, negative-going threshold CMOS IIH High level input current Input buffer 0.5V DD VOL 0.8 V V VIN = VDD –10 10 µA VIN = VSS –10 –60 10 –33 –10 High level output voltage V Type B4 to B12 IOH = – 1 µA VDD –0.05 Type B4 IOH = – 4 mA 2.4 Type B6 IOH = – 6 mA Type B8 IOH = – 8 mA Type B10 IOH = –10 mA Type B12 IOH = –12 mA Low level output voltage V Type B4 to B12 IOL = 1 µA 0.05 Type B4 IOL = 4 mA 0.4 Type B6 IOL = 6 mA Type B8 IOL = 8 mA Type B10 IOL = 10 mA Type B12 IOL = 12 mA NOTES: 1. Type B6 means 6mA output driver cell. 2. Type B8 means 8mA output driver cell. 3. Type B12 means 12mA output driver cells. 27-4 2.0 µA Input buffer with pull-up VOH V Low level input current Input buffer Unit V LVCMOS interface IIL Max High level input voltage LVCMOS interface VIL Min
