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Download Dataram 4GB 2Rx8 PC3-10600R-9
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DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM Identification DTM64328D 512Mx72 4GB 2Rx8 PC3-10600R-9-11-B0 Performance range Clock / Module Speed / CL-tRCD -tRP 667 MHz / PC3-10600 / 9-9-9 533 MHz / PC3-8500 / 8-8-8 533 MHz / PC3-8500 / 7-7-7 400 MHz / PC3-6400 / 6-6-6 Features Description 240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high DTM64328D is a registered 512Mx72 memory module, which conforms to JEDEC's DDR3, PC3-10600 standard. The assembly is DualRank. Each Rank is comprised of nine 256Mx8 DDR3 Hynix SDRAMs. One 2K-bit EEPROM is used for Serial Presence Detect and a combination register/PLL, with Address and Command Parity, is also used. Both output driver strength and input termination impedance are programmable to maintain signal integrity on the I/O signals in a Fly-by topology. A thermal sensor accurately monitors the DIMM module and can prevent exceeding the maximum operating temperature of 95C. Operating Voltage: 1.5V ± 0.075 I/O Type: SSTL_15 On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM Data Transfer Rate: 10.6 Gigabytes/sec Data Bursts: 8 and burst chop 4 mode ZQ Calibration for Output Driver and On-Die Termination (ODT) Programmable ODT / Dynamic ODT during Writes Programmable CAS Latency: 6, 7, 8 and 9 Bi-Directional Differential Data Strobe signals SDRAM Addressing (Row/Col/Bank): 15/10/3 Fully RoHS Compliant Pin Configuration Pin Description Front Side Back Side Name Function 1 VREFDQ 31 DQ25 61 A2 91 DQ41 121 VSS 151 VSS 181 A1 211 VSS CB[7:0] Data Check Bits 2 VSS 32 VSS 62 VDD 92 VSS 152 DM3 182 VDD 212 DM5 DQ[63:0] Data Bits 3 4 5 6 33 /DQS3 34 DQS3 35 VSS 36 DQ26 63 CK1* 64 /CK1* 65 VDD 66 VDD 93 94 95 96 153 /TDQS12 154 VSS 155 DQ30 156 DQ31 183 VDD 184 CK0 185 /CK0 186 VDD 213 /TDQS14 214 VSS 215 DQ46 216 DQ47 DQS[8:0], /DQS[8:0] DM[8:0] /TDQS[17:9] CK[1:0], /CK[1:0] Differential Data Strobes Data Mask Termination Data Strobe Differential Clock Inputs 7 DQS0 8 VSS 9 DQ2 37 DQ27 38 VSS 39 CB0 67 VREFCA 68 PAR_IN 69 VDD 97 DQ43 127 VSS 98 VSS 128 DQ6 99 DQ48 129 DQ7 157 VSS 158 CB4 159 CB5 187 /Event 188 A0 189 VDD 217 VSS 218 DQ52 219 DQ53 CKE[1:0] /CAS /RAS Clock Enables Column Address Strobe Row Address Strobe 10 DQ3 11 VSS 12 DQ8 40 CB1 41 VSS 42 /DQS8 70 A10/AP 71 BA0 72 VDD 100 DQ49 130 VSS 101 VSS 131 DQ12 102 /DQS6 132 DQ13 160 VSS 190 BA1 161 DM8 191 VDD 162 /TDQS17 192 /RAS 13 DQ9 43 DQS8 73 /WE 103 DQS6 133 VSS 163 VSS 14 VSS 15 /DQS1 16 DQS1 17 VSS 44 VSS 45 CB2 46 CB3 47 VSS 74 /CAS 75 VDD 76 /S1 77 ODT1 104 VSS 105 DQ50 106 DQ51 107 VSS 18 DQ10 19 DQ11 20 VSS 48 VTT 49 VTT 50 CKE0 78 VDD 108 DQ56 138 DQ15 79 /S2, NC* 109 DQ57 139 VSS 80 VSS 110 VSS 140 DQ20 168 /RESET 169 CKE1 170 VDD 198 /S3, NC* 228 DQ61 199 VSS 229 VSS 200 DQ36 230 DM7 21 DQ16 51 VDD 81 DQ32 111 /DQS7 141 DQ21 171 A15 201 DQ37 22 DQ17 23 VSS 24 /DQS2 25 DQS2 26 VSS 52 BA2 53 /ERR_OUT 54 VDD 55 A11 56 A7 82 DQ33 83 VSS 84 /DQS4 85 DQS4 86 VSS 112 DQS7 113 VSS 114 DQ58 115 DQ59 116 VSS 27 DQ18 57 VDD 87 DQ34 28 DQ19 58 A5 88 DQ35 29 VSS 30 DQ24 59 A4 60 VDD 89 VSS 90 DQ40 DQ0 DQ1 VSS /DQS0 122 DQ4 /DQS5 123 DQ5 DQS5 124 VSS VSS 125 DM0 DQ42 126 /TDQS9 193 /S0 134 DM1 164 CB6 194 VDD 135 /TDQS10 165 CB7 195 ODT0 136 VSS 166 VSS 196 A13 137 DQ14 167 NC (TEST) 197 VDD 220 VSS /S[3:0] 221 DM6 /WE 222 /TDQS15 A[15:0] Chip Selects Write Enable Address Inputs 223 VSS BA[2:0] Bank Addresses 224 DQ54 225 DQ55 226 VSS 227 DQ60 ODT[1:0] SA[2:0] SCL SDA On Die Termination Inputs SPD Address SPD Clock Input SPD Data Input/Output /EVENT /RESET PAR_IN Temperature Sensing Reset for register and DRAMs Parity bit for Addr/Ctrl 231 /TDQS16 /ERR_OUT Error bit for Parity Error 142 VSS 172 A14 143 DM2 173 VDD 144 /TDQS11 174 A12/BC 145 VSS 175 A9 146 DQ22 176 VDD 202 VSS 232 VSS 203 DM4 233 DQ62 204 /TDQS13 234 DQ63 205 VSS 235 VSS 206 DQ38 236 VDDSPD A12/BC A10/AP VSS VDD VDDSPD Combination input: Addr12/Burst Chop Combination input: Addr10/Auto-precharge Ground Power SPD EEPROM Power 117 SA0 147 DQ23 177 A8 207 DQ39 237 SA1 VREFDQ Reference Voltage for DQ’s 118 SCL 148 VSS 178 A6 208 VSS 238 SDA VREFCA Reference Voltage for CA 119 SA2 120 VT 149 DQ28 150 DQ29 179 VDD 180 A3 209 DQ44 210 DQ45 239 VSS 240 VTT VTT NC Termination Voltage No Connection * = Not used Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 Page 1 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM Front view 133.35 [5.250] 9.50 [0.374] 30.00 [1.181] 17.30 [0.681] 5.00 [0.197] 5.175 [0.204] 47.00 [1.850] 71.00 [2.795] 2.50 [0.098] 123.00 [4.843] Back view Side view 4.00Max [0.157] Max 4.00 Min [0.157] Min 1.27 ±.10 [0.0500 ±0.0040] Notes Tolerances on all dimensions except where otherwise indicated are ±.13 (.005). All dimensions are expressed: millimeters [inches] Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 Page 2 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM /RS1 /RS0 DQSR0 /DQSR0 DMR0 /TDQSR9 I/O[7:0] I/O[7:0] RANK 1 DQR[39:32] DQR[47:40] I/O[7:0] /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS I/O[7:0] RANK 1 /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS I/O[7:0] I/O[7:0] I/O[7:0] DQR[55:48] I/O[7:0] I/O[7:0] /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS DQSR6 /DQSR6 DMR6 /TDQSR15 NU /TDQS DQSR2 /DQSR2 DMR2 /TDQSR11 I/O[7:0] DQR[63:56] I/O[7:0] I/O[7:0] /DQS DQS DM TDQS /CS /DQS DQS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS I/O[7:0] NU /TDQS DQSR7 /DQSR7 DMR7 /TDQSR16 DQSR3 /DQSR3 DMR3 /TDQSR12 DQR[31:24] RANK 0 DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS I/O[7:0] DQR[23:16] I/O[7:0] DQSR5 /DQSR5 DMR5 /TDQSR14 DQSR1 /DQSR1 DMR1 /TDQSR10 DQR[15:8] DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS RANK 0 DM TDQS /CS DQR[7:0] DM TDQS /CS NU /TDQS DQSR4 /DQSR4 DMR4 /TDQSR13 I/O[7:0] CBR[7:0] I/O[7:0] /DQS DQS DM TDQS /CS NU /TDQS /DQS DQS DM TDQS /CS NU /TDQS DQSR8 /DQSR8 DMR8 /TDQSR17 I/O[7:0] V DD TO SDRAMS All 15 OHMS DQR[63:0] DQ[63:0] CB[7:0] CBR[7:0] /RS0 /RS1 /S0 /S1 BA[2:0] BA[2:0]R A[14:0]R A[15:0] DQSR[8:0] /RAS /RASR /DQS[8:0] /DQSR[8:0] /CAS /WE /CASR /WER DMR[8:0] CKE0 DM[8:0] /TDQSR[17:9] REG / PLL DQS[8:0] /TDQS[17:9] CKE1 ODT0 ODT1 All 39 OHMS BA[2:0]R CKE1R ODT0R ODT1R CK0 120 OHMS /CK0 L,R(CLK)[1:0] /L,R(CLK)[1:0] LCLK[1:0] RCLK[1:0] /RCLK[1:0] DECOUPLING V DDSPD V DD V REF_DQ V SS VREF_CA V TT Serial PD All Devices All SDRAMs All Devices All SDRAMs All SDRAMs /RESET A[15:0]R /RASR SDRAMS /CASR /WER VTT /EVENT All 240 OHMS All 39 OHMS CKE[1:0]R ODT[1:0]R /RS[1:0] All 39 OHMS 100 nF /LCLK[1:0] CKE0R /ERR_OUT PAR_IN GLOBAL SDRAM CONNECTS VDD All 39 OHMS 100 nF All 22 OHMS SCL ZQ VTT VSS Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 TEMPERATURE MONITOR/ SERIAL PD SA0 SA1 SDA SA2 Page 3 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM Absolute Maximum Ratings (Note: Operation at or above Absolute Maximum Ratings can adversely affect module reliability.) PARAMETER Symbol Minimum Maximum Unit Temperature, non-Operating TSTORAGE -55 100 C TA 0 70 C Ambient Temperature, Operating DRAM Case Temperature, Operating TCASE 0 95 C VDD -0.4 1.975 V VIN,VOUT -0.4 1.975 V Voltage on VDD relative to VSS Voltage on Any Pin relative to VSS Notes: DRAM Operating Case Temperature above 85C requires 2X refresh. Recommended DC Operating Conditions (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Power Supply Voltage Symbol VDD Minimum 1.425 Typical 1.5 Maximum 1.575 Unit V Note I/O Reference Voltage VREFDQ 0.49 VDD 0.50 VDD 0.51 VDD V 1 I/O Reference Voltage VREFCA 0.49 VDD 0.50 VDD 0.51 VDD V 1 Notes: 1) The value of VREF is expected to equal one-half VDD and to track variations in the VDD DC level. Peak-to-peak noise on VREF may not exceed ±1% of its DC value. For Reference VDD/2 ± 15 mV. DC Input Logic Levels, Single-Ended (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Logical High (Logic 1) Symbol VIH(DC) Minimum VREF + 0.1 Maximum VDD Unit V Logical Low (Logic 0) VIL(DC) VSS VREF - 0.1 V AC Input Logic Levels, Single-Ended (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Logical High (Logic 1) Symbol VIH(AC) Minimum VREF + 0.175 Maximum - Unit V Logical Low (Logic 0) VIL(AC) - VREF - 0.175 V Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 Page 4 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM Differential Input Logic Levels (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Differential Input Logic High Differential Input Logic Low Differential Input Cross Point Voltage relative to VDD/2 Symbol VIH.DIFF Minimum +0.200 Maximum DC:VDD AC:VDD+0.4 Unit V VIL.DIFF DC:VSS AC:VSS-0.4 -0.200 V VIX - 0.150 + 0.150 V Capacitance (TA = 25 C, f = 100 MHz) PARAMETER Pin Symbol Minimum Maximum Unit CCK 1.5 2.5 pF pF Input Capacitance, Clock CK0, /CK0 Input Capacitance, Address BA[2:0], A[15:0], /RAS, /CAS, /WE CI 1.5 2.5 Input Capacitance Control /S[1:0], CKE[1:0], ODT[1:0] CI 1.5 2.5 Input/Output Capacitance DQ[63:0], CB[7:0] DQS[8:0], /DQS[8:0], DM[8:0], /TDQS[17:9] CIO 3 5 pF DC Characteristics (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Input Leakage Current Symbol Minimum Maximum Unit Note IIL -18 +18 µA 1,2 IOL -10 +10 µA 2,3 (Any input 0 V < VIN < VDD) Output Leakage Current (0V < VOUT < VDDQ) Notes: 1) All other pins not under test = 0 V 2) Values are shown per pin 3) DQ, DQS, DQS and ODT are disabled Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 Page 5 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM IDD Specifications and Conditions (TA = 0 to 70 C, Voltage referenced to Vss = 0 V) PARAMETER Operating One Bank ActivePrecharge Current Operating One Bank Active-ReadPrecharge Current Precharge PowerDown Current Precharge PowerDown Current Precharge Quiet Standby Current Precharge Standby Current Active Power-Down Current Active Standby Current Operating Burst Write Current Operating Burst Read Current Burst Refresh Current Self Refresh Current Operating Bank Interleave Read Current Symbol IDD0* IDD1* IDD2P** IDD2P** IDD2Q** IDD2N** IDD3P** IDD3N** IDD4W* IDD4R* IDD5** IDD6** IDD7* Test Condition Operating current : One bank ACTIVATE-to-PRECHARGE Operating current : One bank ACTIVATE-to-READ-toPRECHARGE Precharge power down current: (Slow exit) Precharge power down current: (Fast exit) Precharge quiet standby current Precharge standby current Active power-down current Active standby current Burst write operating current Burst read operating current Refresh current Self-refresh temperature current: MAX TC = 85°C All bank interleaved read current Max Value Unit 468 mA 558 mA 216 mA 270 mA 414 mA 450 mA 270 mA 486 mA 873 mA 918 mA 2070 mA 216 mA 3240 mA * One module rank in this operation the rest in IDD2P slow exit. ** All module ranks in this operation. Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 Page 6 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM AC Operating Conditions PARAMETER Symbol Min Max Unit Internal read command to first data tAA 13.125 20 ns CAS-to-CAS Command Delay tCCD 4 - tCK tCH(avg) 0.47 0.53 tCK tCK 1.5 1.875 ns tCL(avg) 0.47 0.53 tCK tDH 65 - ps Clock High Level Width Clock Cycle Time Clock Low Level Width Data Input Hold Time after DQS Strobe DQ Input Pulse Width tDIPW 400 - ps DQS Output Access Time from Clock tDQSCK -255 +255 ps Write DQS High Level Width tDQSH 0.45 0.55 tCK(avg) Write DQS Low Level Width tDQSL 0.45 0.55 tCK(avg) DQS-Out Edge to Data-Out Edge Skew tDQSQ - 125 ps Data Input Setup Time Before DQS Strobe tDS 30 - ps DQS Falling Edge from Clock, Hold Time tDSH 0.2 - tCK(avg) DQS Falling Edge to Clock, Setup Time tDSS 0.2 - tCK(avg) Clock Half Period tHP minimum of tCH or tCL - ns Address and Command Hold Time after Clock tIH 140 - ps Address and Command Setup Time before Clock tIS 65 - ps Load Mode Command Cycle Time tMRD 4 - tCK DQ-to-DQS Hold tQH 0.38 - tCK(avg) Active-to-Precharge Time tRAS 36 9*tREFI ns Active-to-Active / Auto Refresh Time tRC 49.125 - ns RAS-to-CAS Delay tRCD 13.125 - ns - 7.8 µs o o tREFI o o Average Periodic Refresh Interval 0 C < TCASE < 95 C tREFI - 3.9 µs Auto Refresh Row Cycle Time tRFC 160 - ns Row Precharge Time tRP 13.125 - ns Read DQS Preamble Time tRPRE 0.9 Note-1 tCK(avg) Read DQS Postamble Time tRPST 0.3 Note-2 tCK(avg) Row Active to Row Active Delay tRRD Max(4nCK, 6ns) - ns Internal Read to Precharge Command Delay tRTP Max(4nCK, 7.5ns) - ns Write DQS Preamble Setup Time tWPRE 0.9 - tCK(avg) Write DQS Postamble Time tWPST 0.3 - tCK(avg) Write Recovery Time tWR 15 - ns Internal Write to Read Command Delay tWTR Max(4nCK, 7.5ns) - ns Average Periodic Refresh Interval 0 C < TCASE < 85 C Notes: 1. 2. The maximum preamble is bound by tLZDQS(min) The maximum postamble is bound by tHZDQS(max) Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 Page 7 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM SERIAL PRESENCE DETECT MATRIX Byte# 0 Function. Value Hex 0x92 1 Number of Bytes Used / Number of Bytes in SPD Device / CRC Coverage. Bit 3 ~ Bit 0. SPD Bytes Used 176 Bit 6 ~ Bit 4. SPD Bytes Total 256 Bit 7. CRC Coverage Bytes 0-116 SPD Revision. Rev. 1.1 2 Key Byte / DRAM Device Type. 0x0B 3 Key Byte / Module Type. DDR3 SDRAM 0x01 Bit 3 ~ Bit 0. Module Type Bit 7 ~ Bit 4. Reserved - 4 RDIMM 0 6 SDRAM Density and Banks. Bit 3 ~ Bit 0. Total SDRAM capacity, in megabits Bit 6 ~ Bit 4. Bank Address Bits Bit 7. Reserved SDRAM Addressing. Bit 2 ~ Bit 0. Column Address Bits Bit 5 ~ Bit 3. Row Address Bits Bit 7, 6. Reserved Reserved. 7 Module Organization. 8-Bits 2-Rank 0 8 Bit 2 ~ Bit 0. SDRAM Device Width Bit 5 ~ Bit 3. Number of Ranks Bit 7, 6. Reserved Module Memory Bus Width. 64-Bits 8-Bits 0 10 Bit 2 ~ Bit 0. Primary bus width, in bits Bit 4, Bit 3. Bus width extension, in bits Bit 7 ~ Bit 5. Reserved Fine Timebase (FTB) Dividend / Divisor. Bit 3 ~ Bit 0. Fine Timebase (FTB) Divisor Bit 7 ~ Bit 4. Fine Timebase (FTB) Dividend Medium Timebase (MTB) Dividend. 11 Medium Timebase (MTB) Divisor. 12 5 9 0x11 0x02 1Gb 8 banks 0 0x19 10 15 0 UNUSED 0x00 0x09 0x0B 0x52 SDRAM Minimum Cycle Time (tCKmin). 2 5 1 (MTB = 0.125ns) 8 (MTB = 0.125ns) 1.5ns 0x0C 13 Reserved. UNUSED 0x00 14 CAS Latencies Supported, Least Significant Byte. Bit 0. CL = 4 Bit 1. CL = 5 Bit 2. CL = 6 Bit 3. CL = 7 Bit 4. CL = 8 Bit 5. CL = 9 Bit 6. CL = 10 Bit 7. CL = 11 - Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 0x01 0x08 0x3C X X X X Page 8 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM 15 CAS Latencies Supported, Most Significant Byte. 0x00 Bit 0. CL = 12 Bit 1. CL = 13 Bit 2. CL =14 Bit 3. CL = 15 Bit 4. CL = 16 Bit 5. CL = 17 Bit 6. CL = 18 Bit 7. Reserved. 16 Minimum CAS Latency Time (tAAmin). 17 Minimum Write Recovery Time (tWRmin). 18 Minimum RAS# to CAS# Delay Time (tRCDmin). 19 Minimum Row Active to Row Active Delay Time (tRRDmin). 20 Minimum Row Precharge Delay Time (tRPmin). 21 Upper Nibbles for tRAS and tRC. Bit 3 ~ Bit 0. tRAS Most Significant Nibble Bit 7 ~ Bit 4. tRC Most Significant Nibble Minimum Active to Precharge Delay Time (tRASmin), Least Significant Byte. Minimum Active to Active/Refresh Delay Time (tRCmin), Least Significant Byte. Minimum Refresh Recovery Delay Time (tRFCmin), Least Significant Byte. Minimum Refresh Recovery Delay Time (tRFCmin), Most Significant Byte. Minimum Internal Write to Read Command Delay Time (tWTRmin). Minimum Internal Read to Precharge Command Delay Time (tRTPmin). Upper Nibble for tFAW. Bit 3 ~ Bit 0. tFAW Most Significant Nibble Bit 7 ~ Bit 4. Reserved Minimum Four Activate Window Delay Time (tFAWmin), Least Significant Byte. SDRAM Optional Features. Bit 0. RZQ / 6 Bit 1. RZQ / 7 Bit 6 ~ Bit 2. Reserved Bit 7. DLL-Off Mode Support SDRAM Drivers Supported. Extended Temperature Range Extended Temperature Refresh Rate Auto Self Refresh (ASR) On-die Thermal Sensor (ODTS) Readout Reserved Reserved Reserved Reserved Reserved 22 23 24 25 26 27 28 29 30 31 32 Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 13.125ns 0x69 15.0ns 0x78 13.125ns 0x69 6.0ns 0x30 13.125ns 0x69 0x11 1 1 36.0ns 0x20 49.125ns 0x89 160.0ns 0x00 160.0ns 0x05 7.5ns 0x3C 7.5ns 0x3C 0x00 0 0 30.0ns 0xF0 0x03 X X 0x01 X X € 0x80 Page 9 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM 33-59 60 Reserved 63 Module Nominal Height. Bit 4 ~ Bit 0. Module Nominal Height max, in mm Bit 7 ~ Bit5. Reserved Module Maximum Thickness. Bit 3 ~ Bit 0. Front, in mm (baseline thickness = 1 mm) Bit 7 ~ Bit 4. Back, in mm (baseline thickness = 1 mm) Reference Raw Card Used. Bit 4 ~ Bit 0. Reference Raw Card Bit 6, Bit 5. Reference Raw Card Revision Bit 7. Reserved Address Mapping from Edge Connector to DRAM. 64-66 Bit 0. Rank 1 Mapping (Registered DIMM - Reserved) Bit 7 ~ Bit 1. Reserved Module-Specific Section 61 62 67 UNUSED 0x00 0x0F 29<h<=30 0 0x11 1<th<=2 1<th<=2 0x01 R/C B Rev.0 0 0x05 UNUSED Register Revision Number 0x00 FF 68, 69 Module-Specific Section UNUSED 70 Module-Specific Section P 0x50 71-112 Module-Specific Section UNUSED 0x00 113 114-116 117 118 119 120,121 122-125 126 127 128-131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146,147 148 Module-Specific Section. Module-Specific Section Module Manufacturer ID Code, Least Significant Byte Module Manufacturer ID Code, Most Significant Byte Module Manufacturing Location Module Manufacturing Date Module Serial Number Cyclical Redundancy Code (CRC). Cyclical Redundancy Code (CRC). Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Part Number Module Revision Code DRAM Manufacturer ID Code, Least Significant Byte UNUSED UNUSED 0x00 0x00 0x01 0x91 0x00 0x20 0x23 0x86 0x2E 0x20 0x44 0x41 0x54 0x41 0x52 0x41 0x4D 0x20 0x36 0x34 0x33 0x32 0x38 0x20 0x20 0x00 Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 UNUSED # CRC CRC D A T A R A M 6 4 3 2 8 UNUSED Page 10 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM 149 150-175 176-255 DRAM Manufacturer ID Code, Most Significant Byte Manufacturer’s Specific Data Open for customer use UNUSED UNUSED UNUSED 0x00 0x00 0x00 Bytes: 122-125 change per DIMM. Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 Page 11 DTM64328D 4GB - 240-Pin 2Rx8 Registered ECC DDR3 DIMM DATARAM CORPORATION, USA Corporate Headquarters, P.O. Box 7528, Princeton, NJ 08543-7528; Voice: 609-799-0071, Fax: 609-799-6734; www.dataram.com All rights reserved. The information contained in this document has been carefully checked and is believed to be reliable. However, Dataram assumes no responsibility for inaccuracies. The information contained in this document does not convey any license under the copyrights, patent rights or trademarks claimed and owned by Dataram. No part of this publication may be copied or reproduced in any form or by any means, or transferred to any third party without prior written consent of Dataram. Document 06944, Revision A, 3-Oct-11, Dataram Corporation 2011 Page 12
