Download A Self-Calibrating CMOS Image Sensor with Logarithmic
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72 Chapter 4. Image Sensor Design input signal of the lower nand-gate (nand1) goes low. Consequently it changes its state leading to a high 2 . The upper nand-gate (nand2), however, is switched off as long as 2 is low. Hence, a change in the signal 1 , which is still high, can only happen when 2 has gone high. Switching back by pulling az low gives the same behaviour in the opposite direction. The clock signal 2 can only go low if 1 is already high. For this reason, the case that both clocks are low at the same time never occurs. The non-inverted clock 1 also required for the amplifier control is obtained by inverting the 1 signal before passing the last inverter. One clock circuit is used to drive the complete row of 386 calibration amplifiers. Therefore, the last inverter stages have to drive a high capacitive load. They are implemented with a medium driver strength (W = 6 m for the PMOS) in order to achieve slow switching times in the region of 100 ns. This reduces the crosstalk between clocks and analog signals. 4.2.4 Reference current generation In order to calibrate one complete pixel row at the same time, not only the calibration amplifier but also the reference current is required individually for each column. The generation of a number of equal currents can be achieved by using the corresponding number of transistors and biasing them with the same voltage. Due to device mismatch, however, the resulting currents differ from each other. The typical magnitude of the current variations has been measured in the case of large transistors driven in weak inversion and is presented in section 2.2.2. The current non-uniformities can be further reduced by applying a special layout implementation: dividing one transistor in several parts and spreading them over a large area. By this means, higher spatial frequencies of the process parameter variations are averaged. Figure 4.13 shows the circuit diagram of one complete current source transistor and parts of the adjacent ones. They are implemented as NMOS devices, which means, that they actually represent current sinks. Nevertheless, they are usually called sources if the sign of the current is not important. The transistor belonging to the n-th column is highlighted. It is composed of five smaller transistors in parallel which are spread over five neighbouring columns. On the other hand, one column includes five sub-transistors corresponding to the adjacent columns. The absolute current magnitude is controlled by the bias voltage Vb , which is generated by a current mirror outside the transistor row. n-2 n-1 Iref Iref n Iref n+1 Iref n+2 Iref Vb M1n Mn2 column n-2 column n-1 Mn3 column n Mn4 column n+1 Mn5 column n+2 Figure 4.13: Circuit diagram of the spread current source transistors to reduce the column-to-column variations. The five parts corresponding to the middle current source (column n) are highlighted.