Download Transcend 128MB SDRAM PC100 Unbuffer Non-ECC Memory

168PIN PC100 Unbuffered DIMM
128MB With 16Mx8 CL3
TS16MLS64V8D
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply to Vss
Storage temperature
Power dissipation
Short circuit current
Mean time between failure
Temperature Humidity Burning
Temperature Cycling Test
Note:
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
MTBF
THB
TC
Value
-1.0~4.6
-1.0~4.6
-55~+150
8
50
50
85°C/85%, Static Stress
0°C ~ 125°C Cycling
Unit
V
V
°C
W
mA
year
°C-%
°C
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
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DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VDD
3.0
3.3
3.6
V
Input high voltage
VIH
2.0
3.0
VDD+0.3
V
Input low voltage
VIL
-0.3
0
0.8
V
Output high voltage
VOH
2.4
V
Output low voltage
VOL
0.4
V
Input leakage current (Inputs)
IIL
-16
8
uA
Input leakage current (I/O pins)
IOL
-3
1.5
uA
Note
1
2
IOH=-2mA
IOL=2mA
3
4
Note: 1. VIH (max) = 5.6V AC .The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC .The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (TA = 25°C, f = 1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0~A11, BA0~ BA1)
CIN1
25
45
pF
Input capacitance (/RAS, /CAS, /WE)
CIN2
25
45
pF
Input capacitance (CKE0)
CIN3
25
45
pF
Input capacitance (CLK0~CLK3)
CIN4
10
13
pF
Input capacitance (/CS0, /CS2)
CIN5
15
25
pF
Input capacitance (DQM0~DQM7)
CIN6
8
12
pF
Data input/output capacitance (DQ0~DQ63)
COUT
9
12
pF
Transcend information Inc.
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