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LEVEL 28 Modified BSIM Model Selecting MOSFET Models: Level 1-40 LEVEL 28 Modified BSIM Model This section lists the LEVEL 28 parameters and equations for the modified BSIM model. LEVEL 28 Features The following are the significant features of the LEVEL 28 model. ■ Vertical field dependence of carrier mobility ■ Carrier velocity saturation ■ Drain-induced barrier lowering ■ Depletion charge sharing by source and drain ■ Nonuniform doping profile for ion-implanted devices ■ Channel length modulation ■ Subthreshold conduction ■ Geometric dependence of electrical parameters LEVEL 28 Model Parameters The LEVEL 28 model parameters follow. Transistor Process Parameters Name (Alias) Units Default Description LEVEL 1 MOSFET model level selector. Set this parameter to 28 for this model. B1 0.0 Lower vdsat transition point LB1 µm 0.0 Length sensitivity WB1 µm 0.0 Width sensitivity 1 Upper vdsat transition point B2 9-146 True-Hspice Device Models Reference Manual, Release 2001.4, revision A
