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UM10116
NXP Semiconductors
P89LPC933/934/935/936 User manual
1. Write to DEECON with ECTL1/ECTL0 (DEECON[5:4]) = ‘10’ and correct bit 8 address
to EADR8. (Note that if the correct values are already written to DEECON, there is no
need to write to this register.)
2. Write the fill pattern to the DEEDAT register. (Note that if the correct values are
already written to DEEDAT, there is no need to write to this register.)
3. Write address bits 7 to 0 to DEEADR. Note that address bits 5 to 0 are ignored.
4. If both the EIEE (IEN1.7) bit and the EA (IEN0.7) bit are logic 1s, wait for the Data
EEPROM interrupt then read/poll the EEIF (DEECON.7) bit until it is set to logic 1. If
EIEE or EA is logic 0, the interrupt is disabled and only polling is enabled. When EEIF
is logic 1, the operation is complete and row is filled with the DEEDAT pattern.
18.7 Data EEPROM Block Fill
The Data EEPROM array can be filled with a predetermined data pattern via polling or
interrupt:
1. Write to DEECON with ECTL1/ECTL0 (DEECON[5:4]) = ‘11’. Set bit EADR8 = 1.
2. Write the fill pattern to the DEEDAT register.
3. Write any address to DEEADR. Note that the entire address is ignored in a block fill
operation.
4. If both the EIEE (IEN1.7) bit and the EA (IEN0.7) bit are logic 1s, wait for the Data
EEPROM interrupt then read/poll the EEIF (DEECON.7) bit until it is set to logic 1. If
EIEE or EA is logic 0, the interrupt is disabled and only polling is enabled. When EEIF
is logic 1, the operation is complete.
19. Flash memory
19.1 General description
The P89LPC933/934/935/936 Flash memory provides in-circuit electrical erasure and
programming. The Flash can be read and written as bytes. The Sector and Page Erase
functions can erase any Flash sector or page. The Chip Erase operation will erase the
entire program memory. Five Flash programming methods are available. On-chip erase
and write timing generation contribute to a user-friendly programming interface. The
P89LPC933/934/935/936 Flash reliably stores memory contents even after 100,000 erase
and program cycles. The cell is designed to optimize the erase and programming
mechanisms. P89LPC933/934/935/936 uses VDD as the supply voltage to perform the
Program/Erase algorithms
19.2 Features
• Parallel programming with industry-standard commercial programmers
• In-Circuit serial Programming (ICP) with industry-standard commercial programmers.
• IAP-Lite allows individual and multiple bytes of code memory to be used for data
storage and programmed under control of the end application.
• Internal fixed boot ROM, containing low-level In-Application Programming (IAP)
routines that can be called from the end application (in addition to IAP-Lite).
UM10116_3
User manual
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 10 February 2009
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