Download MOSFET Models

MOSFET Models
2.10
Capacitance
XPART
Charge partitioning rate flag
0
CJSWG
Source (gate side)sidewall junction capacitance per
unit width, normalized to 100nm Si
1E-10
CJSWGD
Drain (gate side)sidewall junction capacitance per unit defaults to source side value
width, normalized to 100nm Si
MJSWG
Source (gate side) sidewall junction capacitance
grading coefficient
MJSWGD
Drain (gate side) sidewall junction capacitance grading defaults to source side value
coefficient
PBSWG
Source (gate side) sidewall junction capacitance builtin potential
PBSWGD
Drain (gate side) sidewall junction capacitance built-in defaults to source side value
potential
V
TT
Diffusion capacitance transit time coefficient
1E-12
s
NDIF
Power coefficient of channel length dependency for
diffusion capacitance
-1
LDIF0
Channel-length dependency coefficient of diffusion cap 1
VSDFB
Source/drain bottom capacitance flatband voltage
calculated, see Appendix B of
the BSIMSOI4 manual
V
VSDTH
Source/drain bottom capacitance threshold voltage
calculated, see Appendix B of
the BSIMSOI4 manual
V
CSDMIN
Source/drain bottom minimum capacitance
0
F
ASD
Source/drain bottom diffusion smoothing parameter
0.3
CSDESW
Source/drain sidewall-to-substrate fringing capacitance 0
per unit length
F/m
CGSO
Non-LDD region gate-source overlap capacitance per
channel length
calculated, see Appendix B of
the BSIMSOI4 manual
F/m
CGDO
Non-LDD region gate-drain overlap capacitance per
channel length
calculated the same way as
CGSO
F/m
CGEO
Gate-substrate overlap capacitance per unit channel
length
0
F/m
CGSL
Light doped source-gate region overlap capacitance
0.0
F/m
CGDL
Light doped drain-gate region overlap capacitance
0.0
F/m
CKAPPA
Coefficient for lightly doped region overlap capacitance 0.6
fringing field
F/m
CF
Fringing field capacitance
calculated, see Appendix B of
the BSIMSOI4 manual
F/m
CLC
Constant term for the short channel model
0.1E-7
m
CLE
Exponential term for the short channel model
0.0
DLC
Length offset fitting parameter for gate charge from CV LINT
m
DLCB
Length offset fitting parameter for body charge from
CV
0
m
DLBG
Length offset fitting parameter for backgate charge
from CV
0
m
DWC
Width offset fitting parameter from CV
WINT
m
DELVT
Threshold voltage adjust for CV
0
V
FBODY
Scaling factor for body charge
1.0
ACDE
Exponential coefficient for charge thickness in
capmod=3 for accumulation and depletion regions
1.0
m/V
MOIN
Coefficient for the gate-bias dependent surface
potential
15.0
V1/2
F/m²
F/m²
0.5
0.7
V
Process Related Parameters
Table: Process Related Parameters
318