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PSpice Reference Guide Analog devices IGBT equations In the following equations: Imos= MOSFET channel current IT= anode current Icss= steady-state (bipolar) collector current Ibss= Steady-state base current Imult= avalanche multiplication current Rb = conductivity modulated base resistance b = ambipolar mobility ratio Dp = diffusion coefficient for holes W = quasi-neutral base width Qeb = instantaneous excess carrier base charge Qb = background mobile carrier charge ni = intrinsic carrier concentration M = avalanche multiplication factor Igen = (bipolar)collector-base thermally generated current εsi = dielectric permittivity of silicon q = electron charge Wbcj = base (bipolar) to collector depletion width June 2007 328 Product Version 16.0
