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D D R R R R R D D D A A A A A FT FT D R R FT FT FT FT A A A A R R D D D Chapter 28: LPC29xx Flash/EEPROM D R R A FT FT FT A A R R D D D D Corresponding sector is Read-Only FT FT A A R R D Corresponding sector is Read/Write (default) All bits ‘0’ F FT FT All bits ‘1’ A A A Description R R R Flash-word value D D D Table 413. Sector security values FT UM10316 FT FT NXP Semiconductors D D R A FT D R Remark: After enabling flash memory security, this feature is not activated until the next reset. A Remark: When flash memory security is enabled, it is not possible to disable this feature. 2.7 EEPROM functional description EEPROM is a non-volatile memory mostly used for storing relatively small amounts of data, for example for storing settings. There are three operations for accessing the memory: reading, writing and erase/program. “Writing” to memory is split up into two separate operations, writing and erase/program. The first operation which will be called “writing” in this document is not really updating the memory, but only updating the temporary data register called the “page register”. The page register needs to be written with minimum 1 byte and maximum 8 bytes before the second operation which is called “erase/program” in this document can be used to actually update the non-volatile memory. Note that the data written to the page register is not “cached”, it can’t be read before it is actually programmed into non-volatile memory. The 64-byte page register, present in every EEPROM device, is exactly the size of a page in memory. One device contains 256 pages and is in total 16 kB big. 2.8 Addressing [13:6] [5:0] 8 MSB bits (selects a page) 6 LSB bits (selects a byte in the page register) Fig 122. Address fields When doing a write operation the LSB bits need to be used to select a byte in a page register. For a write operation the MSB bits are don’t care. It is possible to write to different page register before starting an erase/program operation on any device. For an erase/program operation the LSB bits are don’t care. The MSB bits are needed to select the page. During the erase/program operation the other devices can still be accessed. When doing a read operation all the address fields are needed. 2.9 Initialization Remark: The minimum operating voltage for the data EEPROM is Vdd = 1.5 V. UM10316_0 User manual © NXP B.V. 2008. All rights reserved. Rev. 00.06 — 17 December 2008 482 of 571
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